| Patent application number | Description | Published |
|---|
| 20090068482 | POLYIMIDE RESIN, POLYIMIDE FILM, AND POLYIMIDE LAMINATE - A polyimide resin composed of a repeating unit represented by the following formula (1): | 03-12-2009 |
| 20090269597 | POLYIMIDE RESIN - A polyimide resin which is soluble in an organic solvent and which has a low coefficient of water absorption, thermosetting properties, high heat resistance and excellent adhesive properties, a method for manufacturing the same, an adhesive and a film each containing the subject polyimide resin and a metal-clad laminate including an adhesive layer composed of the subject polyimide resin are provided. | 10-29-2009 |
| 20090291259 | POLYIMIDE RESIN - A polyimide resin which is satisfactory in solvent solubility and heat resistance, has a low coefficient of water absorption and is excellent in adhesive properties and a method for manufacturing the same, a film containing the subject polyimide resin and a metal-clad laminate including an adhesive layer composed of the subject polyimide resin are provided. | 11-26-2009 |
| 20090305046 | Thermocurable Polyimide Resin Composition - A thermosetting polyimide resin composition which, when used in an adhesive layer of a metal-clad laminate, is able to be manufactured by only the solvent removal without requiring an imidation step reaching 300° C. or higher and is thermosetting, a cured material of which is excellent in adhesive properties, low in coefficient of water absorption and satisfactory in heat resistance is provided. | 12-10-2009 |
| Patent application number | Description | Published |
|---|
| 20080237638 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate common to a first field effect transistor and a second field effect transistor, a channel layer of a first conductivity type formed on the substrate and common to the first and second field effect transistors, a an upper compound semiconductor layer formed on the channel layer and common to the first and second field effect transistors, a compound semiconductor region of a second conductivity type formed in the same layer as the upper compound semiconductor layer, a gate electrode of the first field effect transistor in ohmic contact with the compound semiconductor region, and a gate electrode of the second field effect transistor in Schottky contact with the upper compound semiconductor layer. | 10-02-2008 |
| 20100001318 | Field effect transistor, method of manufacturing the same, and semiconductor device - A J-FET includes a channel layer of a first conductivity type (a Si-doped n-type AlGaAs electron supply layers | 01-07-2010 |
| 20100052013 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is desired for semiconductor devices to reduce leakage currents. In a semiconductor device having a stacked structure including a GaAs layer and an InGaP layer, p-type impurity is doped to the GaAs layer. Consequently, the conduction band of the GaAs is raised to higher than the Fermi level. As a result, electron accumulation is suppressed and the gate leakage current can be reduced. | 03-04-2010 |
| 20100140672 | FIELD EFFECT TRANSISTOR - A field effect transistor includes a Schottky layer; a stopper layer formed of InGaP and provided in a recess region on the Schottky layer; a cap layer provided on the stopper layer and formed of GaAs; and a barrier rising suppression region configured to suppress rising of a potential barrier due to interface charge between the stopper layer and the cap layer. The cap layer includes a high concentration cap layer, and a low concentration cap layer provided directly or indirectly under the high concentration cap layer and having an impurity concentration lower than the high concentration cap layer. | 06-10-2010 |
