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Bissey
Laure Bissey, Levallois-Perret FR
| Patent application number | Description | Published |
|---|---|---|
| 20100112100 | COMPOSITIONS COMPRISING A C-GLYCOSIDE COMPOUND - The present invention relates, in particular, to: | 05-06-2010 |
Laure Bissey, Paris FR
| Patent application number | Description | Published |
|---|---|---|
| 20090075935 | COMPOSITION COMPRISING AT LEAST ONE C-GLYCOSIDE DERIVATIVE AND AT LEAST ONE HYALURONIC ACID AND ITS COSMETIC USE - The present invention relates to a topical cosmetic and/or dermatological composition comprising, in a physiologically acceptable medium, at least one hyaluronic acid or a derivative thereof and at least one C-glycoside derivative. | 03-19-2009 |
Lucien J. Bissey, Boise, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20080311528 | Methods of Patterning Photoresist, and Methods of Forming Semiconductor Constructions - The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist. | 12-18-2008 |
| 20100276742 | RANDOM ACCESS MEMORY DEVICE UTILIZING A VERTICALLY ORIENTED SELECT TRANSISTOR - A memory structure has a vertically oriented access transistor with an annular gate region. A transistor is fabricated such that the channel of the transistor extends outward with respect to the surface of the substrate. An annular gate is fabricated around the vertical channel such that it partially or completely surrounds the channel. A buried annular bitline may also be implemented. After the vertically oriented transistor is fabricated with the annular gate, a storage device may be fabricated over the transistor to provide a memory cell. | 11-04-2010 |