Patent application number | Description | Published |
20090056108 | BIMORPHIC STRUCTURES, SENSOR STRUCTURES FORMED THEREWITH, AND METHODS THEREFOR - A bimorphic structure responsive to changes in an environmental condition, sensor structures incorporating one or more of such bimorphic structures, and a method of forming such bimorphic structures. The sensor structure has an electrically-conductive first contact on a substrate, and a bimorph beam anchored to the substrate so that a portion thereof is suspended above the first contact. The bimorph beam has a multilayer structure that includes first and second layers, with the second layer between the first layer and the substrate. A portion of the first layer projects through an opening in the second layer toward the first contact so as to define an electrically-conductive second contact located on the beam so as to be spaced apart and aligned with the first contact for contact with the first contact when the beam sufficiently deflects toward the substrate. | 03-05-2009 |
20090108403 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE - In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a capacitor embedded in a dielectric material below the surface of a semiconductor substrate is disclosed. Other embodiments are described and claimed. | 04-30-2009 |
20090108458 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE - In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, an electrical bus embedded in a dielectric material below a surface of a semiconductor substrate is disclosed. Other embodiments are described and claimed. | 04-30-2009 |
20090146248 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE - In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed. | 06-11-2009 |
20090148999 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE - In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method to manufacture a semiconductor structure includes forming a cavity in a substrate. A portion of the substrate is doped, or a doped material is deposited over a portion of the substrate. At least a portion of the doped substrate or at least a portion of the doped material is converted to a dielectric material to enclose the cavity. The forming of the cavity may occur before or after the doping of the substrate or the depositing of the doped material. Other embodiments are described and claimed. | 06-11-2009 |
20090174040 | SACRIFICIAL PILLAR DIELECTRIC PLATFORM - Briefly, in accordance with one or more embodiments, a dielectric platform is at least partially formed in a semiconductor substrate and extending at least partially below a surface of a semiconductor substrate. The dielectric platform may include structural pillars formed by backfilling a first plurality of cavities etched in the substrate, and a second plurality of cavities formed by etching away sacrificial pillars disposed between the structural pillars. The second plurality of cavities may be capped to hermetically seal the second plurality of cavities to impart the dielectric constant of the material contained therein, for example air, to the characteristic dielectric constant of the dielectric platform. Alternatively, the second plurality of cavities may be backfilled with a material having a lower dielectric constant than the substrate, for example silicon dioxide where the substrate comprises silicon. | 07-09-2009 |
20090261421 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE - In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed. | 10-22-2009 |
20100230776 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE - Briefly, in accordance with one or more embodiments, a semiconductor structure and method for forming the semiconductor structure are disclosed. The semiconductor structure may comprise a dielectric structure and one or more active areas or one or more field areas, for example, disposed proximate to the dielectric structure along a perimeter thereof. The dielectric structure and the other areas may be separated by one or more trenches or gaps to provide stress relief between the dielectric structure and the other areas. The one or more trenches may include one or more silicon formations formed there between to provide a spring like function and further provide stress relief between the dielectric structure and the other areas. Stress relief of the trenches may be further enhanced via hydrogen annealing to smooth sharp corners or other sharp features of the trenches such as scalloping. | 09-16-2010 |
20100273308 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE - In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed. | 10-28-2010 |
20110183490 | SEMICONDUCTOR STRUCTURE FORMED WITHOUT REQUIRING THERMAL OXIDATION - Briefly, in accordance with one or more embodiments, a semiconductor device is manufactured by forming at least two or more cavities below a surface of a semiconductor substrate wherein the at least two or more cavities are spaced apart from each other by a selected distance, filling at least a portion of the at least two or more cavities with a dielectric material to form at least two or more dielectric structures, removing a portion of the substrate between the at least two or more dielectric structures to form at least one additional cavity, and covering the at least one additional cavity. | 07-28-2011 |
20140035114 | SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD - In one embodiment, a semiconductor package structure includes a substrate having a well region extending from a major surface. An interposer structure is attached to the substrate within the well region. The interposer structure has a major surface that is substantially co-planar with the major surface of the substrate. An electrical device is directly attached to the substrate and the interposer structure. The interposer structure can be an active device, such as a gate driver integrated circuit, or passive device structure, such as an impedance matching network. | 02-06-2014 |
20140264657 | MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR - An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques. | 09-18-2014 |
20140264658 | CELL PHONE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR - A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance. | 09-18-2014 |
20140264659 | TRANSPORTATION DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR - A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance. | 09-18-2014 |
20140268523 | WEARABLE DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR - A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors to reduce form factor, cost, complexity, simplify assembly, while increasing performance. | 09-18-2014 |
20140268524 | DISTRIBUTED SENSOR SYSTEM - A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region. | 09-18-2014 |