Bing-Hung
Bing-Hung Chen, San-Xia Town TW
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20120012047 | METHOD OF TEMPERATURE DETERMINATION FOR DEPOSITION REACTORS - A method of determining a temperature in a deposition reactor includes the steps of depositing a first epitaxial layer of silicon germanium on a substrate, depositing a second epitaxial layer of silicon above the first epitaxial layer, measuring the thickness of the second epitaxial layer and determining the temperature in the deposition reactor using the measured thickness of the second epitaxial layer. The method may also include heating the deposition reactor to approximately a predetermined temperature using a heating device and a temperature measuring device and generating a signal indicative of a temperature within the deposition reactor. The method may also contain the steps of comparing the measured thickness with a predetermined thickness of the second epitaxial layer corresponding to the predetermined temperature and determining the temperature in the deposition reactor using the measured thickness of the second epitaxial layer and the predetermined thickness of the second epitaxial layer. | 01-19-2012 |
20130099350 | Semiconductor Device and Method of Manufacture - A system and method for forming an isolation trench is provided. An embodiment comprises forming a trench and then lining the trench with a dielectric liner. Prior to etching the dielectric liner, an outgassing process is utilized to remove any residual precursor material that may be left over from the deposition of the dielectric liner. After the outgassing process, the dielectric liner may be etched, and the trench may be filled with a dielectric material. | 04-25-2013 |
20140127879 | Semiconductor Device and Method of Manufacture - A system and method for forming an isolation trench is provided. An embodiment comprises forming a trench and then lining the trench with a dielectric liner. Prior to etching the dielectric liner, an outgassing process is utilized to remove any residual precursor material that may be left over from the deposition of the dielectric liner. After the outgas sing process, the dielectric liner may be etched, and the trench may be filled with a dielectric material. | 05-08-2014 |
Bing-Hung Chen, Taipei County TW
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20120095582 | CHAMBER MATCH USING IMPORTANT VARIABLES FILTERED BY DYNAMIC MULTIVARIATE ANALYSIS - The present disclosure provides a method of chamber match. The method includes identifying a golden chamber designed operable to implement a semiconductor process; identifying a reference chamber designed operable for the semiconductor process; and extracting a matching index of a processing chamber relative to the golden chamber and the reference chamber using a dynamic variable analysis. | 04-19-2012 |
Bing-Hung Chen, Taipei City TW
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20130293451 | LIQUID CRYSTAL DISPLAY APPARATUS AND SOURCE DRIVING CIRCUIT THEREOF - A liquid crystal display apparatus includes a liquid crystal panel and a panel driving device. The panel driving device includes a timing control circuit, a gate driving circuit, and a source driving circuit. The source driving circuit includes a low voltage differential signal (LVDS) receiver, a driving voltage generator, and a controller. The LVDS receiver includes a plurality of receive circuits and a power saving control circuit. Each of the receive circuit performs level conversion upon a data LVDS to generate a logic signal, and operates in a selected one of a normal energy consuming mode and a power saving mode. The power saving control circuit controls the receive circuits to operate in the power saving mode when the power saving control circuit does not receive a power adjustment signal from the controller. | 11-07-2013 |
Bing-Hung Chen, New Taipei City TW
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20150021757 | Systems and Methods for Reducing Contact Resistivity of Semiconductor Devices - Systems and methods are provided for reducing a contact resistivity associated with a semiconductor device structure. A substrate including a semiconductor region is provided. One or more dielectric layers are formed on the semiconductor region, the one or more dielectric layers including an element. A gaseous material is applied on the one or more dielectric layers to change a concentration of the element in the one or more dielectric layers. A contact layer is formed on the one or more dielectric layers to generate a semiconductor device structure. The semiconductor device structure includes the contact layer, the one or more dielectric layers, and the semiconductor region. A contact resistivity associated with the semiconductor device structure is reduced by changing the concentration of the element in the one or more dielectric layers. | 01-22-2015 |
Bing-Hung Lin, Sindian City TW
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20080228922 | System and Method for Providing Client Awareness in High-Availability Application Architecture - System and method for providing client awareness in a high-availability application architecture. One embodiment is a method of servicing a service request in a network maintained by an organization and comprising a plurality of servers. The method comprises responsive to an initial request for service by a client via a service broker, providing to the client through the service broker a response identifying an available one of the servers; and connecting the client directly to the available server, the client thereafter sending successive requests for service directly to the available server without involvement of the service broker. | 09-18-2008 |
Bing-Hung Shih, Taichung TW
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20130234010 | OPTICAL COUPLING DEVICE - An optical coupling device includes an optical coupling member, at least one photoelectric converter, and at least one optical fiber. The optical coupling member has a first surface, on which at least one first lens is provided, a second surface, on which at least one second lens is provided, and a reflective surface. The photoelectric converter faces the first lens of the optical coupling member, and the optical fiber faces the second lens of the optical coupling member. The optical coupling device satisfies a condition of 0.3<β<0.9; β=NA1/NA2, where NA1 is a numerical aperture of the photoelectric converter; NA2 is a numerical aperture of the optical fiber. | 09-12-2013 |
20140099057 | OPTICAL COUPLING DEVICE - An optical coupling device includes an optical coupling member, an optical-electrical converting module, and at least two optical fibers. The optical coupling member has a first under positioning portion. The optical-electrical converting module has a substrate, a base, an optical signal transmitter, and an optical signal receiver. The base is made of an insulating material and is provided on the substrate. The base has a receiving portion and a second under positioning portion to engage the first under positioning portion. The optical signal transmitter and the optical signal receiver are receiving in the receiving portion and face the first lens portion when the second under positioning portion engages the first under positioning portion. The optical fibers are beside the optical coupling member and face the second lens portion. | 04-10-2014 |