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Biard
Denis Biard, Thiais FR
| Patent application number | Description | Published |
|---|---|---|
| 20100048670 | Stable and Long-Lasting siRNA Expression Vectors and the Applications Thereof - The invention relates to a siRNA expression vector that can inhibit or eliminate the expression of a target gene in a mammalian cell, said vector comprising: a bacterial cassette containing a bacterial origin of replication and a bacterial selection marker M1; a eucaryotic cell selection cassette comprising a marker M2 for selecting eucaryotic cells under the control of an appropriate promoter; a cassette EBV comprising at least one fragment of the antigen EBNA-1, at least one fragment FR, and at least one fragment of the region DYAD; and a siRNA transcription cassette comprising at least one region coding for a siRNA corresponding to the target gene to be inhibited or eliminated, under the control of elements for regulating transcription in mammalian cells, said regulating elements including at least one promoter capable of transcribing a siRNA in mammalian cells, and a transcription terminator. The invention also relates to the applications of one such expression vector. | 02-25-2010 |
James R. Biard, Richardson, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100264511 | PROVIDING CURRENT CONTROL OVER WAFER BORNE SEMICONDUCTOR DEVICES USING TRENCHES - Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer ( | 10-21-2010 |
James Robert Biard, Richardson, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20110045621 | VERTICAL CAVITY SURFACE EMITTING LASER HAVING MULTIPLE TOP-SIDE CONTACTS - A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes. | 02-24-2011 |
| 20110090930 | VERTICAL CAVITY SURFACE EMITTING LASER WITH UNDOPED TOP MIRROR - A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer. | 04-21-2011 |