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Bi
Bi Chien-Chung, Taichung City TW
| Patent application number | Description | Published |
|---|---|---|
| 20090056801 | Thin film solar cell and manufacturing method thereof - The present invention discloses a thin film solar cell and manufacturing method thereof. The thin film solar cell comprises a substrate, a first electrode layer, a photoelectric conversion layer and a second electrode layer. The first electrode layer is formed with a plurality of first grooves so as to divide the first electrode layer into a plurality of unit cells. The photoelectric conversion layer is formed with a plurality of third grooves. A first offset exists between each third groove and each first groove. The second electrode layer is formed with a plurality of second grooves extending downward adequately into the photoelectric conversion layer. A second offset exists between each second groove and each third groove. The thin film solar cell further comprises at least one isolation groove positioned around the second electrode layer; out of projections of the unit cells, and extended downward so as to remove the second electrode layer. The first electrode layer further comprises at least one outer groove that is inside of the isolation groove and is extended downward to the substrate. | 03-05-2009 |
Bi Jang, Yongin-City KR
| Patent application number | Description | Published |
|---|---|---|
| 20100099236 | GAPFILL IMPROVEMENT WITH LOW ETCH RATE DIELECTRIC LINERS - A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench. | 04-22-2010 |
Bi Lekhac, West Chester, PA US
| Patent application number | Description | Published |
|---|---|---|
| 20090216033 | Epoxidation catalyst - Titanium or vanadium zeolite catalysts are prepared by reacting a titanium or vanadium compound, a silicon source, a templating agent, and a hydrophobic hydrocarbon wax at a temperature and for a time sufficient to form a molecular sieve. The catalyst is useful in olefin epoxidation with hydrogen peroxide. | 08-27-2009 |
Bi Le-Khac, West Chester, PA US
| Patent application number | Description | Published |
|---|---|---|
| 20100076207 | Epoxidation catalyst - Titanium or vanadium zeolite catalysts are prepared by reacting a titanium or vanadium compound, a silicon source, a templating agent, and a hydrophobic hydrocarbon liquid polymer. The catalyst is useful in olefin epoxidation with hydrogen peroxide. | 03-25-2010 |
| 20110098491 | Direct epoxidation process using alkanoic acid modifier - The invention is a process for epoxidizing an olefin with hydrogen and oxygen in the presence of an alkanoic acid and a catalyst comprising a noble metal and a titanium zeolite, wherein the catalyst has not been reduced prior to epoxidation. This process surprisingly gives significantly improved productivity and reduced formation of unwanted propane compared to processes that do not use the alkanoic acid modifier. | 04-28-2011 |
| 20110152550 | Direct epoxidation catalyst and process - A catalyst, useful for the direct epoxidation of olefins, is disclosed. The catalyst comprises palladium nanoparticles, support nanoparticles, and a titanium zeolite having a particle size of 2 microns or greater. The palladium nanoparticles are deposited on the support nanoparticles to form supported palladium nanoparticles, and the supported palladium nanoparticles are deposited on the titanium zeolite; or the supported palladium nanoparticles are deposited on a carrier having a particle size of 2 microns or greater. The invention also includes a process for producing an epoxide comprising reacting an olefin, hydrogen and oxygen in the presence of the catalyst. The catalysts are more active in epoxidation reactions, while demonstrating the same or better selectivity. | 06-23-2011 |