Bhosle
Amit Bhosle, Bellevue, WA US
Patent application number | Description | Published |
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20130226788 | Payment Account Management - Disclosed are various embodiments for charging one or more accounts based on user-created business rules for transactions that occur on a master account. The transaction management application identifies the master account associated with the charge request. Once the master account has been identified, the transaction management application determines which of the other accounts to charge or debit for the charge request. | 08-29-2013 |
20130228616 | Dynamic Payment Card - Disclosed are various embodiments for the creation of a payment card that is programmable by a user in order to access one or more accounts from multiple financial institutions and/or other institutions. The payment card includes an account selection application that facilitates selection of one of the transaction accounts associated with the payment card. A processor circuit then determines a code that corresponds with the respective one of the transaction accounts and facilitates the embodiment of the corresponding code to a dynamic magnetic strip located on the payment card. | 09-05-2013 |
20130232067 | Charge Allocation and Distribution - Disclosed are various embodiments for facilitating the creation of allocation rules for distributing charges to one or more accounts associated with a payment instrument. The charge distribution application accesses allocation rules that are used to determine a charge distribution allocation for linked accounts associated with a master account identified in a charge request. The charge distribution application specifies a percentage of the amount indicated in the charge request to charge to one or more of the linked accounts. The charge distribution application charges up to the total amount specified in the charge request to one or more of the accounts depending on the applicable charge distribution allocation. | 09-05-2013 |
Shahaji Bhosle, Bedford, MA US
Patent application number | Description | Published |
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20140003423 | Method for Layer 2 Forwarding in a Multi-node Switch Cluster | 01-02-2014 |
20140086252 | Use Of Backbone Virtual Local Area Network (BVLAN) As Virtual Routing and Forwarding (VRF) Identifier And Shared Backbone Media Access Control (BMAC) Tables To Implement A Shortest Path Bridging (SPB) Layer 3 (L3) Virtual Services Network (VSN) - A method, apparatus and computer program product for using Backbone Virtual Local Area Network (BVLAN) as Virtual Routing and Forwarding (VRF) Identifier and shared Backbone Media Access Control (BMAC) tables to implement a Shortest Path Bridging (SPB) Layer 3 (L3) Virtual Services Network (VSN) is presented. For routed traffic, a Layer 3 (L3) Virtual Services Network (VSN) is associated with a unique Virtual Local Area Network Identifier (VLAN_ID) value in a first Shortest Path Bridging (SPB) network for routed traffic. The routed traffic comprises traffic sent over an SPB network interface, traffic received from an SPB interface, or traffic forwarded from a first SPB Network interface to a second SPB Network interface. | 03-27-2014 |
Vikram Bhosle, North Reading, MA US
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20140213014 | ION IMPLANTATION BASED EMITTER PROFILE ENGINEERING VIA PROCESS MODIFICATIONS - A method of tailoring the dopant profile of a workpiece by modulating one or more operating parameters is disclosed. In one embodiment, the workpiece may be a solar cell and the desired dopant profile may include a heavily doped surface region and a highly doped region. These two regions can be generated by varying one or more of the parameters of the ion implanter. For example, the extraction voltage may be changed to affect the energy of the implanted ions. The ionization energy can be changed to affect the species of ions being generated from the source gas. In another embodiment, the source gasses that are ionized may be changed to affect the species being generated. After the implant has been performed, thermal processing is performed which minimizes the diffusion of the ions in the workpiece. | 07-31-2014 |
Vikram M. Bhosle, N.reading, MA US
Patent application number | Description | Published |
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20140273330 | METHOD OF FORMING SINGLE SIDE TEXTURED SEMICONDUCTOR WORKPIECES - Methods of creating a workpiece having a smooth side and a textured side are disclosed. In some embodiments, a first side of a workpiece is doped, using ion implantation or diffusion, to create a doped layer. This doped layer of the first side may be more resistant to chemical treatment than the second side of the workpiece. This allows the second side of the workpiece to be textured without capping or otherwise protecting the doped first side, even though the doped layer of the first side physically contacts the chemical treatment. In some embodiments, a p-type dopant is used to create the doped layer. In some embodiments, the workpiece is processed to form a solar cell. | 09-18-2014 |
Vikram M. Bhosle, North Reading, MA US
Patent application number | Description | Published |
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20150024579 | Method Of Improving Ion Beam Quality In An Implant System - A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. | 01-22-2015 |
20150024580 | Method For Implant Productivity Enhancement - A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. The other species used during the conditioning process may be a Group 3, 4 or 5 element. The desired dopant species may be boron. | 01-22-2015 |