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Bhavnagarwala
Azeez Bhavnagarwala, Newtown, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20080225573 | STATIC RANDOM ACCESS MEMORY CELL WITH IMPROVED STABILITY - A memory cell comprises a wordline, a first digital inverter with a first input and a first output, and a second digital inverter with a second input and a second output. Moreover, the memory cell further comprises a first feedback connection connecting the first output to the second input, and a second feedback connection connecting the second output to the first input. The first feedback connection comprises a first resistive element and the second feedback connection comprises a second resistive element. What is more, each digital inverter has an associated capacitance. The memory cell is configured such that reading the memory cell includes applying a read voltage pulse to the wordline. In addition, the first and second resistive elements are configured such that the first and second feedback connections have resistance-capacitance induced delays longer than the applied read voltage pulse. | 09-18-2008 |
Azeez J. Bhavnagarwala, Newtown, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20100041227 | METHODS FOR INCORPORATING HIGH DIELECTRIC MATERIALS FOR ENHANCED SRAM OPERATION AND STRUCTURES PRODUCED THEREBY - Methods for fabricating a hybrid interconnect structure that possesses a higher interconnect capacitance in one set of regions than in other regions on the same microelectronic chip. Several methods to fabricate such a structure are provided. Circuit implementations of such hybrid interconnect structures are described that enable increased static noise margin and reduce the leakage in SRAM cells and common power supply voltages for SRAM and logic in such a chip. Methods that enable combining these circuit benefits with higher interconnect performance speed and superior mechanical robustness in such chips are also taught. | 02-18-2010 |
Azeez Jennudin Bhavnagarwala, Danbury, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20110316569 | Digital Interface for Fast, Inline, Statistical Characterization of Process, MOS Device and Circuit Variations - A Circuit architecture and a method for rapid and accurate statistical characterization of the variations in the electrical characteristics of CMOS process structures, MOS devices and Circuit parameters is provided. The proposed circuit architecture and method enables a statistical characterization throughput of <1 ms/DC sweep at <2 mV or <1 nA resolution accuracy of variations in voltage or current of the device under test. Salient features of proposed circuit architecture include a programmable ramp voltage generator that stimulates the device under test, a dual input 9-11 bit cyclic ADC that captures input and output DC voltage/current signals to/from the device under test, a 2 Kb latch bank that captures 9-11 bit streams for each measurement point in a DC sweep of programmable granularity and a clocking and control scheme that enables continuous measurement and stream out of digital data blocks from which the analog characteristics of the devices under test are reconstructed post measurement. | 12-29-2011 |