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Bhagavat

Milind Bhagavat, Medford, MA US

Patent application numberDescriptionPublished
20090294879Method for Capping a MEMS Wafer - A method for capping a MEMS wafer to form a hermetically sealed device. The method includes applying a glass bonding agent to the cap wafer and burning off organic material in the glass bonding agent. The cap wafer/glass bonding agent combination is then cleaned to reduce lead in the combination. The cleaning is preferably accomplished using an oxygen plasma. The MEMS device is coated with a WASA agent. The cap wafer is then bonded to the MEMS wafer by heating this combination in a capping gas atmosphere of hydrogen molecules in a gas such as nitrogen, argon or neon. This method of capping the MEMS wafer can reduce stiction in the MEMS device.12-03-2009
20100117221Capped Wafer Method and Apparatus - A capped wafer includes a device wafer and an opposing cap wafer with an annular glass frit disposed between the device wafer and the cap wafer. The glass frit and the opposing wafers define a sealed volume that encloses the capped devices, and the glass frit may support the wafer cap during removal of excess wafer cap material from the capped wafer. A method of fabricating a capped wafer includes fabricating an annular intermediate layer between a device wafer and a cap wafer. In an alternate embodiment, a plurality of unsingulated dice each contains bond pads along a single edge and are arranged on a device wafer in an alternating order so that the bond pads of a first die are adjacent to the bond pads of a second die. Removing excess cap wafer material involves making a first cut in the cap wafer near a first row of bond pads and a second cut near the adjacent row of bond pads, such that a strip of wafer cap material is suspended from portions of an underlying supporting member near the edge of the capped wafer, and then removing the wafer cap material suspended from the portions of the supporting glass frit using an adhesive tape.05-13-2010

Milind S. Bhagavat, Fremont, CA US

Patent application numberDescriptionPublished
20110101504Methods of Grinding Semiconductor Wafers Having Improved Nanotopology - Methods for holding a workpiece with a hydrostatic pad are disclosed herein. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.05-05-2011

Milind S. Bhagavat, Medford, MA US

Patent application numberDescriptionPublished
20100087123Method For Assessing Workpiece Nanotopology Using A Double Side Wafer Grinder - A method of processing a semiconductor wafer using a double side grinder of the type that holds the wafer in a plane with a pair of grinding wheels and a pair of hydrostatic pads. The method includes measuring a distance between the wafer and at least one sensor and determining wafer nanotopology using the measured distance. The determining includes using a processor to perform a finite element structural analysis of the wafer based on the measured distance.04-08-2010

Sitaram Bhagavat, Plaisboro, NJ US

Patent application numberDescriptionPublished
20100142808IDENTIFYING BANDING IN DIGITAL IMAGES - One or more implementations access a digital image and determine whether at least one portion of the digital image includes one or more bands having a difference in color. The determination is based on at least two candidate scales. One or more implementations access a digital image and assess at least a portion of the digital image for the existence of one or more bands having a difference in color. The assessing includes determining a fraction of pixels in the portion having a color value offset by an offset value from a color value of a particular pixel in the portion.06-10-2010

Sumeet S. Bhagavat, Creve Coeur, MO US

Patent application numberDescriptionPublished
20110045740Methods and Systems For Adjusting Operation Of A Wafer Grinder Using Feedback from Warp Data - Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.02-24-2011

Sumeet S. Bhagavat, St. Peters, MO US

Patent application numberDescriptionPublished
20110237160Hydrostatic Pad Pressure Modulation in a Simultaneous Double Side Wafer Grinder - Systems and methods are disclosed for modulating the hydrostatic pressure in a double side wafer grinder having a pair of grinding wheels. The systems and methods use a processor to measure the amount of electrical current drawn by the grinding wheels. Pattern detection software is used to predict a grinding stage based on the measured electrical current. The hydrostatic pressure is changed by flow control valves at each stage to change the clamping pressure applied to the wafer and to thereby improve nanotopology in the processed wafer.09-29-2011