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Bevan, US

Cynthia C. Bevan, Redmond, WA US

Patent application numberDescriptionPublished
20100316209COMMUNICATION ACCEPTANCE TIME EXTENDER - A communication system allows a receiving party to request additional time to accept a communication. A telecommunications device of a receiving party detects when the receiving party has indicated a desire for an extended period of time in which to accept an incoming communication. A message is sent to a network communications processor that indicates the receiving party has requested additional time to accept. The network communications processor then processes the communication by resetting or extending a communications availability period associated with the incoming communication.12-16-2010

Glenn E. Bevan, Holden, MO US

Patent application numberDescriptionPublished
20110099702Dump bucket tank insert for new and used toilets - A tank insert for converting a conventional flush toilet into a flapperless, dump bucket-style toilet. The tank insert is sized and shaped to be snugly received within a water tank of the toilet, and includes a water reservoir pivotably received within a catch basin. The water reservoir is filled by the toilets water valve and the toilet's handle actuates the water reservoir to flush the toilet. Upon actuation, water within the water reservoir is discharged into the catch basin, and from there into the toilet bowl, which is effectively cleared.05-05-2011

Greg Bevan, Alta Loma, CA US

Patent application numberDescriptionPublished
20110250368Printable Flame Retardant Polymeric Film - A composition that is configured for use in creating a film. The composition includes a vinyl acetate containing polymer, such as a vinyl acetate ethylene (VAE) copolymer, fire retardant additives and at least one additive that is a pigment, a surfactant, a dispersant, a wetting agent, a defoamer, a coupling agent, a solvent, a UV absorber, a fire retardant, or a light stabilizer.10-13-2011

Gregory C. Bevan, Canyon Country, CA US

Patent application numberDescriptionPublished
20100125174Remote Support of Implantable Medical Devices - Exemplary medical devices and systems for providing remote support relating to implantable medical devices (IMDS) are described. One method generates a graphical user-interface (GUI) relating to an IMD on a local medical device configured to interrogate the IMD. The method also recreates the GUI on a remote medical device effective that a cursor of the GUI can be manipulated from both the local medical device and the remote medical device while selection of IMD parameter values is available only at the local medical device.05-20-2010

Karen E. Bevan, Northville, MI US

Patent application numberDescriptionPublished
20110203550SUPERCHARGER WITH CONTINUOUSLY VARIABLE DRIVE SYSTEM - An engine system includes a throttle valve configured to variably open and close to selectively restrict a volume of air flow. The engine system also includes a supercharger comprising an air inlet, an air outlet, a rotatable drive shaft and rotors associated with the drive shaft, wherein the supercharger is sized to have a flow rate that substantially prevents backwards leaking of air flow. The engine system further includes a combustion engine comprising combustion chambers and an associated rotatable crank shaft and a continuously variable transmission (CVT) configured to variably transfer rotational energy between the drive shaft and the crank shaft.08-25-2011

Karen Evelyn Bevan, Northville, MI US

Patent application numberDescriptionPublished
20080314022Strategy for scheduling LNT regeneration12-25-2008
20080314031Algorithm incorporating driving conditions into LNT regeneration scheduling12-25-2008

Malcolm J. Bevan, Santa Clara, CA US

Patent application numberDescriptionPublished
20100248497METHODS AND APPARATUS FOR FORMING NITROGEN-CONTAINING LAYERS - Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH09-30-2010
20110217834METHOD AND APPARATUS FOR SINGLE STEP SELECTIVE NITRIDATION - Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.09-08-2011
20110281442METHODS AND APPARATUS FOR FORMING NITROGEN-CONTAINING LAYERS - Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH11-17-2011
20120202357In Situ Vapor Phase Surface Activation Of SiO2 - Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.08-09-2012
20130012032NH3 CONTAINING PLASMA NITRIDATION OF A LAYER ON A SUBSTRATE - Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH01-10-2013

Patent applications by Malcolm J. Bevan, Santa Clara, CA US

Malcolm J. Bevan, Dallas, TX US

Patent application numberDescriptionPublished
20110120374System and Method for Mitigating Oxide Growth in a Gate Dielectric - Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.05-26-2011

Patent applications by Malcolm J. Bevan, Dallas, TX US

Malcolm J. Bevan, San Jose, CA US

Patent application numberDescriptionPublished
20090045472Methodology for Reducing Post Burn-In Vmin Drift - A semiconductor device includes source/drain regions formed in a substrate and having a concentration of nitrogen of at least about 5E18 cm02-19-2009

Malcom J. Bevan, Santa Clara, CA US

Patent application numberDescriptionPublished
20130040444METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS - Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.02-14-2013

Mark H. Bevan, Pasadena, CA US

Patent application numberDescriptionPublished
20090200723Cutting board with replaceable cutting sheets - A cutting board assembly has a housing that has a plurality of side walls, a top wall and bottom wall that together define an internal storage space. The top wall has a cutting surface, and the bottom wall has at least one vent opening. A plurality of cutting sheets are stored inside the storage space.08-13-2009

Scott Bevan, Lehi, UT US

Patent application numberDescriptionPublished
20090115608SYSTEMS AND METHODS FOR OBTAINING AND USING DATA FROM A LOCALIZED LOCATION AND TELEMETRY SYSTEM IN A WIDE AREA LOCATION AND TELEMETRY SYSTEM - A wide area location and telemetry system may include a wide area location and telemetry system server that is configured to determine wide area location and telemetry system data about an object when the object is located within the coverage area of the wide area location and telemetry system. The wide area location and telemetry system server may also be configured to receive localized location and telemetry system data about the object when the object is located within the coverage area of a localized location and telemetry system. The wide area location and telemetry system may also include a database and a database manager. The database manager may be configured to store the wide area location and telemetry system data and the localized location and telemetry system data in the database.05-07-2009

Patent applications by Scott Bevan, Lehi, UT US

Scott A. Bevan, Indianapolis, IN US

Patent application numberDescriptionPublished
20090203612XENORHABDUS TC PROTEINS AND GENES FOR PEST CONTROL - The subject invention relates to novel 08-13-2009
20090221501MIXING AND MATCHING TC PROTEINS FOR PEST CONTROL - The subject invention relates to the surprising discovery that toxin complex (TC) proteins, obtainable from 09-03-2009

Patent applications by Scott A. Bevan, Indianapolis, IN US

Thomas E. Bevan, Atlanta, GA US

Patent application numberDescriptionPublished
20110008760ANTHROPOMORPHIC DEVICE FOR MILITARY AND CIVILIAN EMERGENCY MEDICAL TREATMENT TRAINING - An anthropomorphic training device for training of military and civilians in emergency medical care is presented. Such training devices provide stimuli to cue emergency medical personnel to perform required treatments, and are able to withstand simulated field medical training conditions. The devices provide realistic simulation of wounds, human anatomy and phenomena associated with traumatic injury (e.g. bleeding) and to provide immediate stimulus feedback on the success of the medical procedures. The simulation also provides realism sufficient to induce emotional response in the trainee, so that emotional responses can be extinguished or reduced prior to treatment of an actual injured patient.01-13-2011