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Bettles
Colleen Bettles, Glen Waverly AU
| Patent application number | Description | Published |
|---|---|---|
| 20100310409 | MAGNESIUM BASED ALLOY - A magnesium based alloy consisting of, by weight: 2-5% rare earth elements, wherein the alloy contains lanthanum and cerium as rare earth elements and the lanthanum content is greater than the cerium content; 0.2-0.8% zinc; 0-0.15% aluminium; 0-0.5% yttrium or gadolinium; 0-0.2% zirconium, 0-0.3% manganese; 0-0.1% calcium; 0-25 ppm beryllium; and the remainder being magnesium except for incidental impurities. | 12-09-2010 |
Colleen Joyce Bettles, Victoria AU
| Patent application number | Description | Published |
|---|---|---|
| 20090136380 | Magnesium Alloy - A magnesium-based alloy consists of 1.5-4.0% by weight rare earth element(s), 0.3-0.8% by weight zinc, 0.02-0.1% by weight aluminium, and 4-25 ppm beryllium. The alloy optionally contains up to 0.2% by weight zirconium, 0.3% by weight manganese, 0.5% by weight yttrium and 0.1% by weight calcium. The remainder of the alloy is magnesium except for incidental impurities. | 05-28-2009 |
| 20100061880 | MAGNESIUM ALLOY - A magnesium-based alloy consists of 1.5-4.0% by weight rare earth element(s), 0.3-0.8% by weight zinc, 0.02-0.1% by weight aluminium, and 4-25 ppm beryllium. The alloy optionally contains up to 0.2% by weight zirconium, 0.3% by weight manganese, 0.5% by weight yttrium and 0.1% by weight calcium. The remainder of the alloy is magnesium except for incidental impurities. | 03-11-2010 |
Timothy J. Bettles, Rexford, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20100135349 | NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS - Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 | 06-03-2010 |
| 20100314551 | In-line Fluid Treatment by UV Radiation - A UV source is regulated according to one or more purification parameters to produce a desired germicidal effect in a liquid while minimizing wasted power. | 12-16-2010 |
Timothy J. Bettles, Bethlehem, PA US
| Patent application number | Description | Published |
|---|---|---|
| 20090283028 | NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS - Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 | 11-19-2009 |