| Patent application number | Description | Published |
|---|
| 20080303038 | Module Comprising Radiation-Emitting Semiconductor Bodies - A module comprising a regular arrangement of individual radiation-emitting semiconductor bodies ( | 12-11-2008 |
| 20090127580 | LUMINESCENCE DIODE CHIP WITH CURRENT SPREADING LAYER AND METHOD FOR PRODUCING THE SAME - An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified. | 05-21-2009 |
| 20090130787 | Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips - Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer. | 05-21-2009 |
| 20090212307 | Light-emitting diode chip comprising a contact structure - In a luminescence diode chip having a radiation exit area ( | 08-27-2009 |
| 20090257466 | Optoelectronic Semiconductor Component and Method for the Production of an Optoelectronic Semiconductor Device - In at least one embodiment, the optoelectronic semiconductor component includes an optically active area that is formed with a crystalline semiconductor material that contains at least one of the substances gallium or aluminum. Furthermore, the semiconductor component contains at least one facet on the optically active area. Furthermore, the semiconductor component contains at least one boundary layer, containing sulfur or selenium, with a thickness of up to five monolayers, wherein the boundary layer is located on the facet. Such a semiconductor component has a high destruction threshold relative to the optical powers that occur during operation of the semiconductor component. | 10-15-2009 |
| 20090311847 | Method for producing a semiconductor component - Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively. | 12-17-2009 |
| 20100012955 | Light-Emitting Diode Arrangement and Method for Producing the Same - A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side ( | 01-21-2010 |
| 20100084964 | Arrangement and Method for Generating Mixed Light - At least two semiconductor components emit electromagnetic radiation in different wavelength ranges. The superimposition of these electromagnetic radiations of all semiconductor components has at least one fraction in the visible wavelength range. At least one of the semiconductor components has a luminescence conversion element in the beam path. | 04-08-2010 |
| 20100103650 | Arrangement With a Semiconductor Chip and an Optical Waveguide Layer - An arrangement includes a semiconductor chip, which is designed to emit light during operation, and a cover layer, which lies across from the light-emitting surface of the semiconductor chip, such that light emitted from the semiconductor chip penetrates into the cover layer. In an area of the cover layer, overlapping with the chip, a light deflecting structure is provided by means of which light penetrating into the cover layer is deflected. The cover layer acts as an optical waveguide and is designed to emit the light such that it is distributed over the upper surface of cover layer. | 04-29-2010 |
| 20100112789 | Method for Producing Semiconductor Chips using Thin Film Technology - For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed. | 05-06-2010 |
| 20100133564 | Method for Producing Semiconductor Components and Thin-Film Semiconductor Component - The invention relates to a method for producing semiconductor components, wherein a layer composite ( | 06-03-2010 |
| 20100163915 | Thin-Film Semiconductor Component and Component Assembly - A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed. | 07-01-2010 |
| 20100200864 | Method for Fabricating a Semiconductor Component Based on GaN - A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process. | 08-12-2010 |
| 20100283073 | Thin-Film LED Having a Mirror Layer and Method for the Production Thereof - A thin-film LED comprising a barrier layer ( | 11-11-2010 |
| 20100294957 | Radiation-Emitting Semiconductor Body - Described is a radiation-emitting semiconductor body ( | 11-25-2010 |
| 20110012142 | Method for Producing a Luminous Device and Luminous Device - A method for producing a luminous device is specified. A number of light emitting diodes each have a radiation-transmissive carrier and at least two semiconductor bodies spatially separated from one another. Each semiconductor body is provided for generating electromagnetic radiation. The semiconductor bodies can be driven separately from one another and the semiconductor bodies are arranged at the top side of the radiation-transmissive carrier on the radiation-transmissive carrier. A chip assemblage is composed of CMOS chips each of which has at least two connection locations at its top side. At least one of the light emitting diodes is connected to one of the CMOS chips. The light emitting diode is arranged, at the top side of the radiation-transmissive carrier, at the top side of the CMOS chip and each semiconductor body of the light emitting diode is connected to a connection location of the CMOS chip. | 01-20-2011 |
| 20110073902 | Semiconductor Body and Method of Producing a Semiconductor Body - A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive semiconductor layer an n-dopant and a further dopant. | 03-31-2011 |
| 20110140141 | Method for Production of a Radiation-Emitting Semiconductor Chip - A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface. | 06-16-2011 |
