Patent application number | Description | Published |
20090302415 | Micro-Electromechanical System Devices - Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer. | 12-10-2009 |
20100032789 | PASSIVE TEMPERATURE COMPENSATION OF SILICON MEMS DEVICES - The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods. | 02-11-2010 |
20100301434 | MEMS Devices and Methods of Manufacture Thereof - Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall. | 12-02-2010 |
20120061734 | Micro-Electromechanical System Devices - Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer. | 03-15-2012 |
20120164774 | Methods of Manufacture MEMS Devices - Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall. | 06-28-2012 |
Patent application number | Description | Published |
20100247267 | Method for anchoring a fastening element in a mineral component, and fastening element for mineral components - A method is described for anchoring a fastening element ( | 09-30-2010 |
20130145720 | MOUNTING RAIL - In an installation channel to be embedded into a curable construction material, e.g. concrete, having a support profile and preferably an attachment for attaching at least one add-on part to the installation channel, so that the outside of the support profile has a direct connection to the curable construction material at an embedding area, a potential fault block should be large so that large forces can be absorbed by the installation channel. | 06-13-2013 |
20140363239 | ANCHOR ROD - An anchor rod is disclosed. The anchor rod includes an attachment region and an anchoring region which is insertable into a borehole and which has a profiled section. The profiled section interacts with a curable organic and/or inorganic mortar compound filled into the borehole. The profiled section includes a plurality of expansion sections disposed axially in a row which are conically shaped. For each of the plurality of expansion sections, a diameter of the expansion section increases in a direction toward a free front end of the anchor rod, a ratio of a distance of the expansion section to a mean borehole diameter is 0.40 to 0.60, a ratio of an outer diameter to a core diameter of the expansion section is 1.35 to 1.55, and a cone angle of the expansion section is 22.5° to 27.5°. | 12-11-2014 |
Patent application number | Description | Published |
20100176897 | MEMS RESONATOR DEVICES - The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element having a circumference, an anchor region, and a plurality of beam elements coupling the anchor region and the resonator element. Further embodiments comprise additional devices, systems and methods. | 07-15-2010 |
20100186511 | ACCELERATION SENSOR - A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate. | 07-29-2010 |
20120012949 | PRESSURE SENSOR PACKAGE SYSTEMS AND METHODS - Embodiments relate to integrated circuit (IC) sensors and sensing systems and methods. In an embodiment, an IC sensor device includes at least one sensing element; a framing element disposed around the at least one sensing element at a wafer-level; and a package having at least one port predefined at the wafer-level by the framing element, the at least one port configured to expose at least a portion of the at least one sensing element to an ambient environment. | 01-19-2012 |
20120013412 | MEMS RESONATOR DEVICES - Embodiments are related to micro-electromechanical system (MEMS) devices, systems and methods. In one embodiment, a MEMS resonating device comprises a resonator element configured to provide timing; and at least one passive temperature compensation structure arranged on the resonator element. | 01-19-2012 |
20120074570 | Method for Forming a Through Via in a Semiconductor Element and Semiconductor Element Comprising the Same - A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and the main side of the semiconductor element. The method also includes selectively etching a through via from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the etch stop layer and removing at least partly the etch stop layer, so that the conductive region is exposed to the backside and filling at least partly the through via with a conductive material, wherein the conductive material is electrically isolated from the semiconductor element. | 03-29-2012 |
20120211805 | CAVITY STRUCTURES FOR MEMS DEVICES - Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective. | 08-23-2012 |
20130001712 | ACCELERATION SENSOR - A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element. | 01-03-2013 |
20130152696 | MICROMECHANICAL SEMICONDUCTOR SENSING DEVICE - Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal. | 06-20-2013 |
20130270658 | METHODS FOR PRODUCING A CAVITY WITHIN A SEMICONDUCTOR SUBSTRATE - A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed. | 10-17-2013 |
20130293319 | MEMS RESONATOR DEVICES - Embodiments are related to micro-electromechanical system (MEMS) devices, systems and methods. In one embodiment, a MEMS resonating device comprises a resonator element configured to provide timing; and at least one passive temperature compensation structure arranged on the resonator element. | 11-07-2013 |
20140103463 | MEMS SENSOR PACKAGE SYSTEMS AND METHODS - Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (MEMS) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port. | 04-17-2014 |
20140116149 | Sensor with masking - A sensor may include a sensor membrane, wherein one side of the sensor membrane at least partly has a glob top and wherein the glob top furthermore has structurings. | 05-01-2014 |
20140252422 | CAVITY STRUCTURES FOR MEMS DEVICES - Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective. | 09-11-2014 |
20140319627 | CHIP PACKAGE AND A METHOD OF MANUFACTURING THE SAME - In various embodiments, a chip package is provided. The chip package may include at least one chip having a plurality of pressure sensor regions and encapsulation material encapsulating the chip. | 10-30-2014 |
Patent application number | Description | Published |
20090084181 | INTEGRALLY FABRICATED MICROMACHINE AND LOGIC ELEMENTS - Embodiments of the invention are related to micromachine structures. In one embodiment, a micromachine structure comprises a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element comprises a FinFET structure having a height and a width, the height being greater than the width. | 04-02-2009 |
20090261416 | INTEGRATED MEMS DEVICE AND CONTROL CIRCUIT - An integrated circuit includes a silicon-on-insulator (SOI) substrate including a buried oxide layer positioned between a top-side silicon layer and a bottom-side silicon layer. A micro-electromechanical system (MEMS) device is integrated into the top-side silicon layer. A semiconductor layer is formed over the bottom-side silicon layer. A control circuit is integrated into the semiconductor layer and is configured to control the MEMS device. | 10-22-2009 |
20120061777 | INTEGRALLY FABRICATED MICROMACHINE AND LOGIC ELEMENTS - Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width. | 03-15-2012 |