| Patent application number | Description | Published |
|---|
| 20080241597 | RADIO-FREQUENCY OSCILLATOR WITH SPIN-POLARISED CURRENT - This radio-frequency oscillator includes a magnetoresistive device in which a spin-polarised electric current flows. This device comprises a stack of at least a first so-called “anchored” magnetic layer having a fixed magnetisation direction, a second magnetic layer, an amagnetic layer inserted between the above-mentioned two layers, intended to ensure magnetic decoupling of said layers. The oscillator also comprises means of causing a flow of electrons in said layers perpendicular to these layers and, if applicable, of applying an external magnetic field to the structure. The second magnetic layer has an excitation damping factor at least 10% greater than the damping measured in a simple layer of the same material having the same geometry for magnetic excitation having wavelengths equal to or less than the extent of the cone or cylinder of current that flows through the stack that constitutes the magnetoresistive device. | 10-02-2008 |
| 20080247072 | MAGNETIC TUNNEL JUNCTION MAGNETIC MEMORY - This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: | 10-09-2008 |
| 20090015972 | LOW NOISE MAGNETIC FIELD SENSOR - The present invention relates to a magnetoresistive sensor comprising a first pinned-magnetization magnetic layer ( | 01-15-2009 |
| 20090039879 | LOW NOISE MAGNETIC FIELD SENSOR USING A LATERAL SPIN TRANSFER - The present invention relates to a magnetoresistive sensor comprising a first pinned-magnetization magnetic layer ( | 02-12-2009 |
| 20090135526 | Magnetoresistive Device - The device comprises two magnetoresistive elements ( | 05-28-2009 |
| 20090147392 | MAGNETIC ELEMENT WITH THERMALLY-ASSISTED WRITING - This magnetic element with thermally-assisted writing using a field or spin transfer comprises a magnetic reference layer referred to as the “trapped layer”, the magnetisation of which is in a fixed direction; a magnetic storage layer called the “free layer” having a variable magnetisation direction and consisting of a layer made of a ferromagnetic material with magnetisation in the plane of the layer and magnetically coupled to a magnetisation-trapping layer made of an antiferromagnetic material; a semiconductor or an insulating layer with confined-current-paths sandwiched between the reference layer and the storage layer. At least one bilayer consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer is placed in the storage layer between ferromagnetic layer which is in contact with the semiconductor or insulating layer with confined-current-paths and antiferromagnetic layer. | 06-11-2009 |
| 20090231909 | Magnetoresistive Tunnel Junction Magnetic Device and Its Application to MRAM - The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction ( | 09-17-2009 |
| 20090290266 | Spin Valve Magnetoresistive Device With Conductive-Magnetic Material Bridges In A Dielectric Or Semiconductor Layer Alternatively Of Magnetic Material - Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers. | 11-26-2009 |
| 20100003421 | METHOD OF FABRICATING A NANOSTRUCTURE ON A PRE-ETCHED SUBSTRATE - The present invention relates to a method of fabricating a nanostructure, comprising the following steps: prestructuring a substrate ( | 01-07-2010 |
| 20100039181 | SPIN-TRANSFER TORQUE OSCILLATOR - The invention relates to a method of operating a spin-transfer torque structure to generate voltage oscillations, said structure comprising a first layer of magnetic material having a fixed magnetization vector, a spacer of non magnetic material and a second layer of magnetic material having a free magnetization vector. The method includes the application of a current (j | 02-18-2010 |
| 20100284104 | MAGNETIC RECORDING MEDIUM - The present invention relates to a magnetic recording medium ( | 11-11-2010 |
| 20110007560 | SPIN POLARISED MAGNETIC DEVICE - A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer. | 01-13-2011 |
| 20110013448 | MAGNETIC ELEMENT WITH A FAST SPIN TRANSFER TORQUE WRITING PROCEDURE - A magnetic tunnel junction, comprising a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer by passing a write current through said magnetic tunnel junction, and an insulating layer disposed between said reference layer and first storage layer; characterized in that the magnetic tunnel junction further comprises a polarizing device to polarize the spins of the write current oriented perpendicular with the magnetization direction of the reference layer; and wherein said first storage layer has a damping constant above 0.02. A magnetic memory device formed by assembling an array of the magnetic tunnel junction can be fabricated resulting in lower power consumption. | 01-20-2011 |
| 20110044099 | HEAT ASSISTED MAGNETIC WRITE ELEMENT - This magnetic element for writing by magnetic field or heat assisted spin transfer comprises a stack consisting of:
| 02-24-2011 |
| 20110163743 | THREE-LAYER MAGNETIC ELEMENT, METHOD FOR THE PRODUCTION THEREOF, MAGNETIC FIELD SENSOR, MAGNETIC MEMORY, AND MAGNETIC LOGIC GATE USING SUCH AN ELEMENT - This three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon. | 07-07-2011 |
