Patent application number | Description | Published |
20100001289 | PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALIUM NITRIDE - A method of manufacturing a low defect density GaN material comprising at least two steps of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially competent layer under first growing conditions selected to induce island features formation, followed by (b.) a second step of growing an epitaxial layer of GaN under second growing conditions selected to enhance lateral growth until coalescence. | 01-07-2010 |
20100074826 | METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF NITRIDE BY EPITAXIAL GROWTH ON A SUBSTRATE PREVENTING GROWTH ON THE EDGES OF THE SUBSTRATE - A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate. | 03-25-2010 |
20110316000 | MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE SUBSTRATES AND DEVICES FABRICATED THEREOF - The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support ( | 12-29-2011 |
20130001586 | SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING - A method for forming a substrate includes forming a base layer comprising a Group III-V material on a substrate, cooling the base layer and inducing cracks in the base layer, and forming a bulk layer comprising a Group III-V material on the base layer after cooling. | 01-03-2013 |
20130001748 | SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING - A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate. | 01-03-2013 |
20130082279 | GROUP III-V SUBSTRATE MATERIAL WITH PARTICULAR CRYSTALLOGRAPHIC FEATURES - A substrate including a body comprising a Group III-V material and having an upper surface, the body comprising an offcut angle defined between the upper surface and a crystallographic reference plane, and the body further having an offcut angle variation of not greater than about 0.6 degrees. | 04-04-2013 |
20130118408 | SYSTEM FOR USE IN THE FORMATION OF SEMICONDUCTOR CRYSTALLINE MATERIALS - A system used in the formation of a semiconductor crystalline material includes a first chamber configured to contain a liquid metal and a second chamber in fluid communication with the first chamber, the second chamber having a greater volume than a volume of the first reservoir chamber. The system further includes a vapor delivery conduit coupled to the first chamber configured to deliver a vapor phase reactant material into the first chamber to react with the liquid metal and form a metal halide vapor phase product. | 05-16-2013 |
20130143394 | SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING - A method of forming a semiconductor substrate including forming a base layer of a Group 13-15 material on a growth substrate during a growth process, forming a mask having mask regions and gap regions overlying the base layer during the growth process, and preferentially removing a portion of the base layer underlying the mask during the growth process. | 06-06-2013 |
20130288455 | METHOD OF FORMING A FREESTANDING SEMICONDUCTOR WAFER - A method of forming a freestanding semiconductor wafer includes providing a semiconductor substrate including a semiconductor layer having a back surface and an upper surface opposite the back surface, wherein the semiconductor layer comprises at least one permanent defect between the upper surface and back surface, removing a portion of the back surface of the semiconductor layer and the permanent defect from the semiconductor layer, and forming a portion of the upper surface after removing a portion of the back surface and the permanent defect. | 10-31-2013 |
20140065801 | Group III-V Substrate Material With Particular Crystallographic Features And Methods Of Making - A method of forming a semiconductor substrate including providing a base substrate including a semiconductor material, and forming a first semiconductor layer overlying the base substrate having a Group 13-15 material via hydride vapor phase epitaxy (HVPE), the first semiconductor layer having an upper surface having a N-face orientation. | 03-06-2014 |
20140185639 | GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS OF MAKING - A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm | 07-03-2014 |
20150076512 | SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING - A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate. | 03-19-2015 |