| Patent application number | Description | Published |
|---|
| 20080254596 | Method for Transferring Wafers - The invention concerns a method for preparing a thin layer ( | 10-16-2008 |
| 20090095399 | METHOD FOR TRIMMING A STRUCTURE OBTAINED BY THE ASSEMBLY OF TWO PLATES - A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer. | 04-16-2009 |
| 20090130392 | METHOD OF PRODUCING A THIN LAYER OF SEMICONDUCTOR MATERIAL - A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconductor material includes implanting ions into the semiconductor wafer to define a reference plane, where the ion dose is above a minimum dose, but below a critical dose so as to avoid degrading the wafer surface. The method further includes applying a thermal treatment to define a layer of microcavities and applying stress to free the thin layer from the wafer. | 05-21-2009 |
| 20090275152 | PROCESS FOR THE COLLECTIVE FABRICATION OF MICROSTRUCTURES CONSISTING OF SUPERPOSED ELEMENTS - The invention relates to the collective fabrication of superposed microstructures, such as an integrated circuit and a protective cover. Individual structures each comprising superposed first and second elements are fabricated collectively. The first elements (for example, integrated circuit chips) are prepared on a first plate and the second elements (for example, transparent covers) are prepared on a second plate. The plates are bonded to each other over the major portion of their facing surfaces, but with no bonding of the defined zones in which there is no adhesion. The individual structures are then diced via the top on the one hand and via the bottom on the other hand along different parallel dicing lines passing through the zones with no adhesion, so that, after dicing, the first elements retain surface portions (those lying between the parallel dicing lines) that are not covered by a second element. A connection pad may thus remain accessible at this point. | 11-05-2009 |
| 20090311477 | Compliant Substrate In Particular For Hetero-Epitaxial Depositing - The invention relates to a compliant substrate ( | 12-17-2009 |
| 20100176397 | METHOD FOR PRODUCING PARTIAL SOI STRUCTURES COMPRISING ZONES CONNECTING A SUPERFICIAL LAYER AND A SUBSTRATE - The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises:
| 07-15-2010 |
| 20110092051 | PROCESS FOR THE TRANSFER OF A THIN FILM COMPRISING AN INCLUSION CREATION STEP - A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate. | 04-21-2011 |
| Patent application number | Description | Published |
|---|
| 20090280595 | Process for assembling wafers by means of molecular adhesion - The invention relates to a process of bonding by molecular adhesion of two layers, such as wafers of semiconductor material, wherein propagation of a first bonding wave is initiated from a pressure point applied to at least one of the two layers, and wherein the first bonding wave step is followed by propagating a second bonding wave over an area, for example, in the vicinity of the pressure point. Propagation of the second bonding wave may be obtained through the interposing of a separation element between the two wafers and the withdrawal of the element, for example, after the beginning of the first bonding wave propagation. | 11-12-2009 |
| 20090301995 | Method for Making a Plate-Like Detachable Structure, in Particular Made of Silicon, and Use of Said Method - Process for fabricating a structure in the form of a wafer, including at least a substrate, a superstrate and at least one intermediate layer interposed between the substrate and the superstrate, the process including: forming, on a substrate, at least one intermediate layer including at least one base material in which extrinsic atoms or molecules are distributed, these differing from the atoms or molecules of the base material, so as to constitute a substructure; applying a base heat treatment to this substructure such that, in the temperature range of this heat treatment, the presence of the chosen extrinsic atoms or molecules in the chosen base material causes a structural transformation of said intermediate layer; and joining a superstrate to said heat-treated intermediate layer so as to obtain said structure in the form of a wafer. | 12-10-2009 |
| 20100032085 | METHOD FOR PRODUCING SELF-SUPPORTING MEMBRANES - The disclosure relates to methods and systems for separating a membrane from a substrate. In accordance with a preferred embodiment, the method includes applying at least one member to the membrane by way of an adhesive, wherein the adhesive is applied to substantially less than the entirety of the surface of said membrane which is not facing the substrate. The method further includes separating at least a part of the membrane from the substrate by applying a force to the at least one member. | 02-11-2010 |
| 20100285213 | PROCESS OF TREATING DEFECTS DURING THE BONDING OF WAFERS - The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate. | 11-11-2010 |
