| Patent application number | Description | Published |
|---|
| 20080232180 | Semiconductor memory device and method for driving the same - A semiconductor memory device includes: a delay locked loop (DLL) for delaying an external clock to generate a DLL clock signal; an internal command signal generator for generating an internal command signal in response to an external command; a delay circuit for delaying the internal command signal by a delay time corresponding to a delay time of the DLL to output a delayed internal command signal; and an output enable signal generator for generating an output enable signal based on the delayed internal command signal and the DLL clock signal. | 09-25-2008 |
| 20080285374 | Semiconductor memory device - A semiconductor memory device includes: a first address buffer configured to be used in a test mode and a normal mode and to receive more addresses in the test mode than in the normal mode; and a second address buffer configured to be used in the normal mode and disabled in the test mode. | 11-20-2008 |
| 20090003117 | SEMICONDUCTOR MEMORY DEVICE - A circuit can control a bit rate of information output from a multi-purpose register (MPR) of a semiconductor memory device in a test mode, thereby reducing current consumption for outputting information in a multi-purpose register (MPR). The semiconductor memory device includes a multi-purpose register configured separately to store a plurality of information, and to control a bit rate of the stored information in a test mode, each of the information having multiple bits, and a connection selector configured selectively to connect an output terminal of the multi-purpose register to one of a number of global lines according to an operation mode. | 01-01-2009 |
| 20090052271 | SEMICONDUCTOR MEMORY DEVICE - An internal signal generator for use in a semiconductor memory device includes an internal read address generation unit and an internal write address generation unit. The internal read address generation unit generates a plurality of read delay addresses by delaying an external address for a predetermined latency shorter than an additive latency set by the semiconductor memory device and selects one of the read delay addresses to thereby output an internal read address. The internal write address generation unit generates a plurality of write delay addresses by delaying the internal read address for a preset latency shorter than a column address strobe (CAS) latency set by the semiconductor memory device and selects one of the write delay addresses to thereby output an internal write address. | 02-26-2009 |
| 20090116299 | Semiconductor memory device and method for operating the same - A semiconductor memory device is capable of generating a desired output enable signal without increasing an initial count value and bit number and generating a desired final output enable signal, without unnecessary reset operations, by reflecting CAS latency information on an external clock count value. The semiconductor memory device includes a first output enable signal generating unit configured to compare a first count value, which is obtained by counting a delay locked loop (DLL) clock, with a second clock count value, which is obtained by counting an external clock until a read command is input, and output a first output enable signal, and a final output enable signal generating unit configured to output, as a final output enable signal, one of the first output enable signal and a plurality of output enable signals generated by shifting the first output enable signal, according to a column address strobe (CAS) latency. | 05-07-2009 |
| 20090219764 | Semiconductor memory device for high-speed data input / output - Semiconductor memory device for high-speed data input/output includes a first serializer configured to partially serialize input 8-bit parallel data to output first to fourth serial data, a second serializer configured to partially serialize the first to fourth serial data to output fifth and sixth serial data and a third serializer configured to serialize the fifth and sixth serial data to output seventh serial data. | 09-03-2009 |
| 20090219770 | Semiconductor memory device and operation method thereof - Semiconductor memory device and operation method thereof includes an output enable signal generator configured to synchronize a read command to a data clock signal to generate an output enable signal according to a CAS latency, a sampling control signal generator configured to generate a sampling control signal that is activated during a period corresponding to an activation timing of the output enable signal and an end timing of data output, a read clock signal generator configured to sample the data clock signal in response to the sampling control signal to generate a read clock signal and a data output circuit configured to output data according to the read clock signal. | 09-03-2009 |
| 20090222707 | Semiconductor memory device having capability of stable initial operation - A semiconductor memory device is capable of outputting a preset logic level through an EDC pin according to an operation mode during an initial operation, and providing a stable operation according to the specification of the semiconductor memory device just after the input of a data clock (WCK). The semiconductor memory device includes an output circuit configured to output a synchronous data in response to a data clock when the data clock is enabled, and output an asynchronous data when the data clock is disabled, and a data clock detection circuit configured to control outputting the asynchronous data by checking whether the data clock is in a stable state or not. | 09-03-2009 |
| 20090222713 | Semiconductor device and method for operating the same - Semiconductor device includes a pad for outputting a cyclic redundancy check (CRC) data for error detection and a signal outputting unit for outputting the CRC data or a data strobe signal, which is output together with data of being output in response to a read command, through the pad according to operation modes. Method for operating a semiconductor device provided a step of outputting a CRC data for error detection through a CRC data pad and a step of outputting a data strobe signal, which is output together with data output in response to a read command, through the CRC data pad according to an operation mode. | 09-03-2009 |
| 20090273365 | DATA INPUT/OUTPUT MULTIPLEXER OF SEMICONDUCTOR DEVICE - There is provided an input/output multiplexer capable of reducing a layout area in designing a device by disposing first and second multiplexers at either side of a specific data input/output (I/O) pad. An apparatus for multiplexing data inputted or outputted to a global input/output (I/O) line includes a first multiplexer for multiplexing the data and supplying a first multiplexed data to the global I/O line and a second multiplexer for multiplexing the first multiplexed data supplied to the global I/O line, wherein the first and second multiplexers are formed at either side of the global I/O line. | 11-05-2009 |
| 20100091583 | MEMORY DEVICE HAVING LATCH FOR CHARGING OR DISCHARGING DATA INPUT/OUTPUT LINE - A semiconductor memory device of the claimed invention, having an active state for performing a read or write operation and an inactive state except for the active state includes a data input/output (I/O) line; a pull-up latch unit for pulling-up the data I/O line when the semiconductor memory device is in the inactive state; a pull-down latch unit for pulling-down the data I/O line when the semiconductor memory device is in the inactive state; and a selection unit for selectively driving one of the pull-up latch unit and the pull-down latch unit. | 04-15-2010 |
| 20110085401 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes: a first address buffer configured to be used in a test mode and a normal mode and to receive more addresses in the test mode than in the normal mode; and a second address buffer configured to be used in the normal mode and disabled in the test mode. | 04-14-2011 |
