| Patent application number | Description | Published |
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| 20090313398 | METHOD AND SYSTEM FOR STORING MEMORY COMPRESSED DATA ONTO MEMORY COMPRESSED DISKS - A method (and system) of storing information, includes storing main memory compressed information onto a memory compressed disk, where pages are stored and retrieved individually, without decompressing the main memory compressed information. | 12-17-2009 |
| 20110179197 | METHOD AND SYSTEM FOR STORING MEMORY COMPRESSED DATA ONTO MEMORY COMPRESSED DISKS - A method of transmitting compressed data from a main memory to an input/output adaptor (IOA)/input/output processor (IOP), includes sending compressed memory directory information to the IOA/IOP and copying a content of the memory to the IOA/IOP using a direct memory access (DMA) operation, without decompressing the data. | 07-21-2011 |
| 20110185132 | METHOD AND SYSTEM FOR STORING MEMORY COMPRESSED DATA ONTO MEMORY COMPRESSED DISKS - In a computer system supporting memory compression and wherein data is stored on a disk in a different compressed format, and wherein an IOA (input/output adaptor)/IOP (input/output processor) selectively reads from and writes to a main memory through a direct memory access (DMA) operation, a method for transmitting compressed data from the IOA/IOP to the main memory includes reserving a set of free memory sectors to contain the data in said main memory, sending to the IOA/IOP addresses of said memory sectors, copying the data from the IOA/IOP to said memory sectors using said DMA operation, constructing at the IOA/IOP compressed memory directory information defining how and where the data is stored in memory, sending the memory directory information to a memory controller, and storing the memory directory information in the compressed memory directory structure. | 07-28-2011 |
| Patent application number | Description | Published |
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| 20100072401 | HYDROGEN ION IMPLANTER USING A BROAD BEAM SOURCE - Ion implanters incorporating multibeam ion sources are used to meet process dose and energy demands associated with fabricating a thin lamina for use in photovoltaic devices. The thin lamina are formed by ion implantation followed by cleaving. | 03-25-2010 |
| 20100116983 | MASS ANALYSIS MAGNET FOR A RIBBON BEAM - A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially “racetrack” configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source. | 05-13-2010 |
| 20100140077 | EXCITED GAS INJECTION FOR ION IMPLANT CONTROL - An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber. | 06-10-2010 |
| 20110155921 | SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS - A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane. | 06-30-2011 |
| 20110240876 | APPARATUS FOR CONTROLLING THE TEMPERATURE OF AN RF ION SOURCE WINDOW - An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source. | 10-06-2011 |
| 20110240877 | TEMPERATURE CONTROLLED ION SOURCE - An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber. | 10-06-2011 |
| 20110240878 | TEMPERATURE CONTROLLED ION SOURCE - An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber. | 10-06-2011 |
