| Patent application number | Description | Published |
|---|
| 20090056800 | Surface Passivation of Silicon Based Wafers - The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed. | 03-05-2009 |
| 20090283141 | Solar Cells and Methods for Manufacturing Same - This invention relates to a method for contacting solar wafers containing one or more layers of temperature sensitive passivation layers by first creating local openings in the passivation layer(s) and then fill the openings with an electric conducting material. In this way, it becomes possible to avoid the relatively high temperatures needed in the conventional method for contacting solar wafers containing one or more passivation layer(s), and thus maintain the excellent passivation properties of newly developed temperature sensitive passivation layer(s) during and after the contacting. | 11-19-2009 |
| 20090314338 | COATING FOR THIN-FILM SOLAR CELLS - This invention relates to a method for producing thin film solar cells with a back-side reflective layer, wherein the solar module is a silicon thin film device placed in-between a back side planar substrate and a front side planar glass superstrate placed in parallel and a distance from the back side planar substrate, wherein the silicon thin film device comprises in successive order from the front side: a front side transparent conductive (TCO) layer, a multi junction thin-film solar conversion layer comprising amorphous and microcrystalline silicon or alloys thereof, a back side TCO-layer, a diffuse reflective layer with one or more local through-going apertures, and a metal layer covering the reflective layer and which is in contact with the back side TCO-layer through the one or more apertures in the reflective layer. The invention also relates to a method for forming the solar cell. | 12-24-2009 |
| 20110120531 | METHOD FOR PRODUCTION OF WAFER BASED SOLAR PANELS - This invention relates to a method for producing solar cells, and photovoltaic panels thereof. The method for producing solar panels comprises employing a number of semiconductor wafers and/or semiconductor sheets of films prefabricated to prepare them for back side metallization, which are placed and attached adjacent to each other and with their front side facing downwards onto the back side of the front glass, before subsequent processing that includes depositing at least one metal layer covering the entire front glass including the back side of the attached wafers/sheets of films. The metallic layer is then patterned/divided into electrically isolated contacts for each solar cell and into interconnections between adjacent solar cells. | 05-26-2011 |
