| Patent application number | Description | Published |
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| 20110265814 | METHODS FOR PROCESSING SUBSTRATES IN PROCESS SYSTEMS HAVING SHARED RESOURCES - Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached. | 11-03-2011 |
| 20110266256 | METHODS FOR PROCESSING SUBSTRATES IN PROCESS SYSTEMS HAVING SHARED RESOURCES - Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include providing a substrate to the first process chamber of the twin chamber processing system, wherein the first process chamber has a first processing volume that is independent from a second processing volume of the second process chamber; providing one or more processing resources from the shared processing resources to only the first processing volume of the first process chamber; and performing a process on the substrate in the first process chamber. | 11-03-2011 |
| 20110303639 | METHODS FOR PROCESSING SUBSTRATES HAVING METAL HARD MASKS - Methods of processing metal hard masks are provided herein. In some embodiments, a method for processing a metal hard mask layer having a tri-layer resist disposed thereon is provided. A pattern is etched from a patterned photoresist layer into a second anti-reflective layer using a first plasma comprising chlorine. The pattern is etched into a first anti-reflective layer using a second plasma formed from a second process gas. The second anti-reflective layer is removed using a third plasma comprising chlorine (Cl | 12-15-2011 |
| 20110304078 | METHODS FOR REMOVING BYPRODUCTS FROM LOAD LOCK CHAMBERS - Methods for removing process byproducts from a load lock chamber are provided herein. In some embodiments, a method for removing process byproducts from a load lock chamber may include: performing a process on a substrate disposed within a process chamber; transferring the substrate from the process chamber to a load lock chamber; and providing an inert gas to the load lock chamber via at least one gas line while transferring the substrate from the process chamber to the load lock chamber to remove process byproducts from the load lock chamber. | 12-15-2011 |
| 20110306215 | METHODS OF PROCESSING SUBSTRATES HAVING METAL MATERIALS - Methods of processing substrates having metal layers are provided herein. In some embodiments, a method of processing a substrate comprising a metal layer having a patterned mask layer disposed above the metal layer, the method may include etching the metal layer through the patterned mask layer; and removing the patterned mask layer using a first plasma formed from a first process gas comprising oxygen (O | 12-15-2011 |
| 20120094499 | METHOD OF PERFORMING AN IN SITU CHAMBER CLEAN - Methods of performing in situ chamber cleaning for etch chambers are described. | 04-19-2012 |
| 20120222699 | METHOD FOR REMOVING HALOGEN-CONTAINING RESIDUES FROM SUBSTRATE - Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well. | 09-06-2012 |
| 20120222752 | METHOD EXTENDING THE SERVICE INTERVAL OF A GAS DISTRIBUTION PLATE - Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate. | 09-06-2012 |
