| Patent application number | Description | Published |
|---|
| 20080237581 | DEVICE WITH PHASE-SEPARATED DIELECTRIC STRUCTURE - An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer. | 10-02-2008 |
| 20080242112 | PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS - A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation. | 10-02-2008 |
| 20080246095 | AMBIPOLAR TRANSISTOR DESIGN - An ambipolar transistor, including a p-type semiconductor region and an n-type semiconductor region near the p-type semiconductor region. Also a first terminal and second terminal contact both the p-type semiconductor region and the n-type semiconductor region. Furthermore, the p-type semiconductor region and the n-type semiconductor region substantially do not overlap each other. A method of manufacturing an ambipolar transistor is also disclosed, including forming a p-type semiconductor region, forming an n-type semiconductor region near the p-type semiconductor region, forming a first terminal contacting both the p-type semiconductor region and n-type semiconductor region, forming a second terminal contacting both the p-type semiconductor region and n-type semiconductor region; and wherein the p-type semiconductor region and the n-type semiconductor region substantially do not overlap, and have substantially no interfacial area. | 10-09-2008 |
| 20080277724 | ELECTRONIC DEVICE HAVING A DIELECTRIC LAYER - An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties. | 11-13-2008 |
| 20080286907 | SEMICONDUCTOR LAYER FOR THIN FILM TRANSISTORS - A method for making a zinc oxide semiconductor layer for a thin film transistor using solution processing at low temperatures is disclosed. The method comprises making a solution comprising a zinc salt and a complexing agent; applying the solution to a substrate; and heating the solution to form a semiconductor layer on the substrate. A thin film transistor using this zinc oxide semiconductor layer has good mobility and on/off ratio. | 11-20-2008 |
| 20090039344 | POLY[BIS(ETHYNYL)HETEROACENE]S AND ELECTRONIC DEVICES GENERATED THEREFROM - An electronic device comprising a polymer of Formula or Structure (I) | 02-12-2009 |
| 20090127552 | THIN FILM TRANSISTOR - A thin film transistor is disclosed comprising comprises a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio. | 05-21-2009 |
| 20100219409 | POLYTHIOPHENES AND DEVICES THEREOF - An electronic device containing a polythiophene | 09-02-2010 |
| 20100230670 | DEVICE CONTAINING COMPOUND HAVING INDOLOCARBAZOLE MOIETY AND DIVALENT LINKAGE - An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage. | 09-16-2010 |
| 20110034668 | ELECTRONIC DEVICES - An electronic device, such as a thin film transistor containing a semiconductor of the Formula: | 02-10-2011 |
