Beneventi
Davide Beneventi, Saint Martin D'Heres FR
Patent application number | Description | Published |
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20130011956 | Method For Texturing A Photovoltaic Cell - A method for texturing an active surface of a photovoltaic cell in single-crystal silicon or poly-crystal silicon includes depositing a resin on the active surface of the cell, texturing the resin on the active surface with geometric patterns, and texturing the active surface of the cell by eliminating the deposited resin. The depositing of the resin is preceded by pre-texturing the resin on a depositing tool. The texturing step of the resin on the active surface is simultaneous with the depositing of the resin on the active surface. | 01-10-2013 |
20140255782 | METHOD FOR PREPARING SELF-SUPPORTING FLEXIBLE ELECTRODES - The present invention relates to a method for preparing self-supporting flexible electrodes by a method that implements refined cellulose fibres as binder. | 09-11-2014 |
Francesco Beneventi, Foggia IT
Patent application number | Description | Published |
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20100283180 | APPARATUS FOR THE INFUSION OF RESIN INTO A PREFORM IN A CLOSED MOULD - A tool for the infusion of a resin into a preform made of fibre material includes a mould which can be closed around the preform and in the body of which at least one inlet duct is formed to allow resin to be injected into the mould so that the resin can be infused into the preform. At least one reservoir which can contain the resin, is also formed in the body of the mould and is connected to the at least one inlet duct. The mould can be inserted in an autoclave and the reservoir is configured to permit the transfer of the resin from the reservoir to the inlet duct under the effect of the temperature and of the pressure that are produced in the autoclave, thus allowing the resin to be injected into the mould. | 11-11-2010 |
Giovanni Betti Beneventi, Polinago IT
Patent application number | Description | Published |
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20120236626 | MEMORY CELL - The object of the present invention is a non-volatile memory cell ( | 09-20-2012 |
20130181182 | PHASE-CHANGE MEMORY CELL - The memory cell includes a memory area which is formed in a phase-change material pattern based on chalcogenide. An electric pin-type junction is series-connected between electrodes. The pin junction is formed in a crystalline area by the interface between first and second doped areas of the phase-change material pattern. The memory area is formed in one of the two doped areas, at a distance from the junction. | 07-18-2013 |