| Patent application number | Description | Published |
|---|
| 20090046461 | LED Light String - An LED light string has multiple wires, multiple un-encapsulated LEDs, multiple transparent casings, multiple primary spheres and multiple auxiliary spheres. The un-encapsulated LEDs are mounted on the wires. The transparent casings respectively receive the un-encapsulated LEDs and have multiple heat-dissipation holes to dissipate heat from the un-encapsulated LEDs. The primary spheres are transparent, respectively receive the transparent casings and have multiple trapezoid indentations defined in outer surfaces of the primary spheres. The auxiliary spheres are mounted around the wires and also have multiple trapezoid indentations. The trapezoid indentations of the primary and the auxiliary spheres scatter the light from the un-encapsulated LEDs to generate a dazzling visual effect. | 02-19-2009 |
| 20090184337 | Light-Emitting Diode, Package Structure Thereof and Manufacturing Method for the Same - A light-emitting diode includes a sapphire substrate, an n-type semiconductor, a light-emitting layer, a p-type semiconductor layer, an anode and a conductive material. The n-type semiconductor layer is formed on the sapphire substrate and has a side surface, a center section and an edge around the center portion. The light-emitting layer is formed on the n-type semiconductor layer. The p-type semiconductor layer is formed on the light-emitting layer. The anode is formed on the p-type semiconductor layer. The conductive material is formed on the bottom surface of the sapphire substrate and is in contact with the n-type semiconductor layer. | 07-23-2009 |
| 20090215210 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE - A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified. | 08-27-2009 |
| 20090230407 | LED DEVICE AND METHOD FOR FABRICATING THE SAME - An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is formed to have multiple micro concave-convex structures to mitigate the light-emitting loss resulted from total reflection, and increase the light-emitting efficiency of the LED device. | 09-17-2009 |
| 20090246899 | Method of manufacturing light emitting diode - A method of manufacturing light emitting diode has steps of providing a package base, providing a light emitting structure and bonding the light emitting structure on the package base. The package base has a first metal layer and a second metal layer respectively formed on a top and a bottom thereon. The light emitting structure has a substrate, a light emitting lamination and a reflective metal layer. The light emitting lamination is formed on the substrate and has an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent electrode layer deposited on the substrate in sequence. The reflective metal layer is formed on a bottom of the substrate. The first metal layer is connected to the reflective metal layer by an ultrasonic thermal press technique. Therefore, the thermal resistance of the finished LED reduces. | 10-01-2009 |
| 20100047940 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE - A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified. | 02-25-2010 |
| 20100055814 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE - A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified. | 03-04-2010 |
| 20100216265 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE - A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified. | 08-26-2010 |
| 20110097832 | METHOD FOR FABRICATING LED DEVICE - An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is formed to have multiple micro concave-convex structures to mitigate the light-emitting loss resulted from total reflection, and increase the light-emitting efficiency of the LED device. | 04-28-2011 |
