| Patent application number | Description | Published |
|---|
| 20080246136 | Chips having rear contacts connected by through vias to front contacts - A microelectronic unit is provided in which front and rear surfaces of a semiconductor element may define a thin region which has a first thickness and a thicker region having a thickness at least about twice the first thickness. A semiconductor device may be present at the front surface, with a plurality of first conductive contacts at the front surface connected to the device. A plurality of conductive vias may extend from the rear surface through the thin region of the semiconductor element to the first conductive contacts. A plurality of second conductive contacts can be exposed at an exterior of the semiconductor element. A plurality of conductive traces may connect the second conductive contacts to the conductive vias. | 10-09-2008 |
| 20080296709 | Chip assembly - The present invention provides an integrated circuit chip assembly and a method of manufacturing the same. The assembly includes a package element having a top surface and an integrated circuit chip having a top surface, a bottom surface, edge surface between the top and bottom surfaces, and contacts exposed at the top surface. The package element is disposed below the chip with the top surface of the package element facing toward the bottom surface of the chip. At least one spacer element resides between the top surface of the package element and the bottom surface of the chip. According to one embodiment, the at least one spacer element may form a substantially closed cavity between the package element and the integrated circuit chip. According to another embodiment, first conductive features may extend from the contacts of the chip along the top surface, and at least some of said first conductive features extend along at least one of the edge surfaces of the chip. | 12-04-2008 |
| 20080296717 | Packages and assemblies including lidded chips - A lidded chip is provided which includes a chip having a major surface and a plurality of first chip contacts exposed at the major surface. A lid overlies the major surface. A chip carrier is disposed between the chip and the lid, the chip carrier having an inner surface confronting the major surface and an outer surface confronting the lid. A plurality of first carrier contacts of the chip carrier are conductively connected to the first chip contacts. A plurality of second carrier contacts extend upwardly at least partially through the openings in the lid. | 12-04-2008 |
| 20080296748 | Transmission line stacking - A microelectronic unit has a structure including a microelectronic element such as a semiconductor chip with a first contact disposed remote from the periphery of the structure. The unit further includes first and second redistribution conductive pads disposed near a periphery of the structure and a conductive path incorporating first and second conductors extending toward the first contact, these conductors being connected to one another adjacent the first contact. The conductive path is connected to the first contact, and can provide signal routing from the periphery of the unit to the contact without the need for long stubs. A package may include a plurality of such units, which may be stacked on one another with the redistribution conductive pads of the various units connected to one another. | 12-04-2008 |
| 20080303132 | Semiconductor chip packages having cavities - Packaged microelectronic elements are provided which include a dielectric element, a cavity, a plurality of chip contacts and a plurality of package contacts, and microelectronic elements having a plurality of bond pads connected to the chip contacts. | 12-11-2008 |
| 20080315977 | Low loss RF transmission lines - A transmission structure having high propagation velocity and a low effective dielectric loss. The structure comprises a dielectric, a first reference conductor disposed below the dielectric, a signal conductor disposed above the dielectric, and a second reference conductor disposed over the signal conductor. The second reference conductor has a recess portion facing the signal conductor, the recess portion defining a gap between the second reference conductor and the signal conductor. The gap may be filled with air which has a relative dielectric constant approximately equal to one (1). Because of the physical and dielectric constant characteristics of the gap, the structure concentrates an electric field in the gap resulting in an effective dielectric constant approximately (approaching) one (1) and an effective dielectric loss approximately equal to zero (0). Thus, the structure exhibits a propagation velocity approximately equal to the speed of light. | 12-25-2008 |
| 20090002964 | Multilayer wiring element having pin interface - A method of forming contacts for an interconnection element, includes (a) joining a conductive element to an interconnection element having multiple wiring layers, (b) patterning the conductive element to form conductive pins, and (c) electrically interconnecting the conductive pins with conductive features of the interconnection element. A multiple wiring layer interconnection element having an exposed pin interface, includes an interconnection element having multiple wiring layers separated by at least one dielectric layer, the wiring layers including a plurality of conductive features exposed at a first face of the interconnection element, a plurality of conductive pins protruding in a direction away from the first face, and metal features electrically interconnecting the conductive features with the conductive pins. | 01-01-2009 |
| 20090014861 | Microelectronic package element and method of fabricating thereof - Microelectronic package elements and packages having dielectric layers and methods of fabricating such elements packages are disclosed. The elements and packages may advantageously be used in microelectronic assemblies having high routing density. | 01-15-2009 |
| 20090039528 | Wafer level stacked packages with individual chip selection - A method is provided for fabricating a stacked microelectronic assembly by steps including stacking and joining first and second like microelectronic substrates, each including a plurality of like microelectronic elements attached together at dicing lanes. Each microelectronic element has boundaries defined by edges including a first edge and a second edge. The first and second microelectronic substrates can be joined in different orientations, such that first edges of microelectronic elements of the first microelectronic substrate are aligned with second edges of microelectronic elements of the second microelectronic substrate. After exposing traces at the first and second edges of the microelectronic elements of the stacked microelectronic substrates, first and second leads can be formed which are connected to the exposed traces of the first and second microelectronic substrates, respectively. The second leads can be electrically isolated from the first leads. | 02-12-2009 |
| 20090045524 | Microelectronic package - A microelectronic package includes a lower unit having a lower unit substrate with conductive features and a top and bottom surface. The lower unit includes one or more lower unit chips overly/ing the top surface of the lower unit substrate that are electrically connected to the conductive features of the lower unit substrate. The microelectronic package also includes an upper unit including an upper unit substrate having conductive features, top and bottom surfaces and a hole extending between such top and bottom surfaces. The upper unit further includes one or more upper unit chips overlying the top surface of the upper unit substrate and electrically connected to the conductive features of the upper unit substrate by connections extending within the hole. The upper unit may include an upper unit encapsulant that covers the connections of the upper unit and the one or more upper unit chips. | 02-19-2009 |
| 20090065907 | Semiconductor packaging process using through silicon vias - A microelectronic unit | 03-12-2009 |
| 20090071000 | Formation of circuitry with modification of feature height - A connection component for mounting a chip or other microelectronic element is formed from a starting unit including posts projecting from a dielectric element by crushing or otherwise reducing the height of at least some of the posts. | 03-19-2009 |
| 20090071707 | Multilayer substrate with interconnection vias and method of manufacturing the same - A method is provided for manufacturing a multilayer substrate. An insulating layer can have a hole overlying a patterned second metal layer. In turn, the second metal layer can overlie a first metal layer. A third metal layer can be electroplated onto the patterned second metal layer within the hole, the third metal layer extending from the second metal layer onto a wall of the hole. When plating the third metal layer, the first and second metal layers can function as a conductive commoning element. | 03-19-2009 |
| 20090104736 | Stacked Packaging Improvements - A plurality of microelectronic assemblies ( | 04-23-2009 |
| 20090115047 | Robust multi-layer wiring elements and assemblies with embedded microelectronic elements - An interconnect element | 05-07-2009 |
| 20090133254 | Components with posts and pads - A packaged microelectronic element includes connection component incorporating a dielectric layer ( | 05-28-2009 |
| 20090160065 | Reconstituted Wafer Level Stacking - A stacked microelectronic assembly is fabricated from a structure which includes a plurality of first microelectronic elements having front faces bonded to a carrier. Each first microelectronic element may have a first edge and a plurality of first traces extending along the front face towards the first edge. After exposing at least a portion of the first traces, a dielectric layer is formed over the plurality of first microelectronic elements. After thinning the dielectric layer, a plurality of second microelectronic elements are aligned and joined with the structure such that front faces of the second microelectronic elements are facing the rear faces of the plurality of first microelectronic elements. Processing is repeated to form the desirable number of layers of microelectronic elements. In one embodiment, the stacked layers of microelectronic elements may be notched at dicing lines to expose edges of traces, which may then be electrically connected to leads formed in the notches. Individual stacked microelectronic units may be separated from the stacked microelectronic assembly by any suitable dicing, sawing or breaking technique. | 06-25-2009 |
| 20090162975 | Method of forming a wafer level package - A method is provided for forming a microelectronic package at a wafer level. Such method can include providing a semiconductor wafer having a surface with a pattern of electrical contacts thereon. An interposer component can be provided which has a compliant dielectric layer bonded to a conductive layer. A pattern of holes can be formed through the compliant dielectric layer and the conductive layer which corresponds to the pattern of electrical contacts. The compliant dielectric layer can be contacted with the semiconductor wafer surface so that the pattern of holes is in an aligned position with the pattern of contacts and the compliant dielectric layer and the semiconductor wafer surface then bonded in the aligned position to unite the semiconductor wafer and the interposer component to form a wafer level semiconductor package. The wafer level semiconductor package can be diced to form individual semiconductor chip packages. | 06-25-2009 |
| 20090212381 | WAFER LEVEL PACKAGES FOR REAR-FACE ILLUMINATED SOLID STATE IMAGE SENSORS - A solid state image sensor includes a microelectronic element having a front face and a rear face remote from the front face, the rear face having a recess extending towards the front surface. A plurality of light sensing elements may be disposed adjacent to the front face so as to receive light through the part of the rear face within the recess. A solid state image sensor can include a microelectronic element having a front face and a rear face remote from the front face, a plurality of light sensing elements disposed adjacent to the front face, the light sensing elements being arranged to receive light through the rear face. Electrically conductive package contacts may directly overlie the light sensing elements and the front face and be connected to chip contacts at the front face through openings in an insulating packaging layer overlying the front face. | 08-27-2009 |
| 20090316378 | Wafer level edge stacking - A microelectronic assembly can include a first microelectronic device and a second microelectronic device. Each microelectronic device has a die structure including at least one semiconductor die and each of the microelectronic devices has a first surface, a second surface remote from the first surface and at least one edge surface extending at angles other than a right angle away from the first and second surfaces. At least one electrically conductive element extends along the first surface onto at least one of the edge surfaces and onto the second surface. At least one conductive element of the first microelectronic device can be conductively bonded to the at least one conductive element of the second microelectronic device to provide an electrically conductive path therebetween. | 12-24-2009 |
| 20100009554 | Microelectronic interconnect element with decreased conductor spacing - A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines. | 01-14-2010 |
| 20100044860 | Microelectronic substrate or element having conductive pads and metal posts joined thereto using bond layer - An interconnection element can include a substrate, e.g., a connection substrate, element of a package, circuit panel or microelectronic substrate, e.g., semiconductor chip, the substrate having a plurality of metal conductive elements such as conductive pads, contacts, bond pads, traces, or the like exposed at the surface. A plurality of solid metal posts may overlie and project away from respective ones of the conductive elements. An intermetallic layer can be disposed between the posts and the conductive elements, such layer providing electrically conductive interconnection between the posts and the conductive elements. Bases of the posts adjacent to the intermetallic layer can be aligned with the intermetallic layer. | 02-25-2010 |
| 20100053407 | Wafer level compliant packages for rear-face illuminated solid state image sensors - A solid state image sensor includes a microelectronic element having a front face and a rear face remote from the front face, the rear face having a recess extending towards the front surface. A plurality of light sensing elements may be disposed adjacent to the front face so as to receive light through the part of the rear face within the recess. A solid state image sensor can include a microelectronic element, e.g., a semiconductor chip, having a front face and a rear face remote from the front face, a plurality of light sensing elements disposed adjacent to the front face, the light sensing elements being arranged to receive light through the rear face. A packaging structure, which can include a compliant layer, can be attached to a front surface of the microelectronic element. Electrically conductive package contacts may directly overlie the light sensing elements and the front face and be connected to chip contacts at the front face through openings in an insulating packaging layer overlying the front face. | 03-04-2010 |
| 20100193970 | MICRO PIN GRID ARRAY WITH PIN MOTION ISOLATION - A microelectronic package includes a microelectronic element having faces and contacts, a flexible substrate overlying and spaced from a first face of the microelectronic element, and a plurality of conductive terminals exposed at a surface of the flexible substrate. The conductive terminals are electrically interconnected with the microelectronic element and the flexible substrate includes a gap extending at least partially around at least one of the conductive terminals. In certain embodiments, the package includes a support layer, such as a compliant layer, disposed between the first face of the microelectronic element and the flexible substrate. In other embodiments, the support layer includes at least one opening that is at least partially aligned with one of the conductive terminals. | 08-05-2010 |
| 20100197081 | MICROELECTRONIC PACKAGE WITH THERMAL ACCESS - A method of forming a microelectronic package including the steps of providing a three-layer metal plate, having a first layer, a second layer and a third layer. A plurality of conductive elements is formed from the first layer of the metal plate. A dielectric sheet is attached to the first layer of the metal plate, such that the dielectric sheet is remote from the third layer. A plurality of conductive features is then formed from the third layer of the metal plate which are also remote from the dielectric sheet. A microelectronic element is next electrically conducted to the conductive elements and a heat spreader is thermally connected the microelectronic element. | 08-05-2010 |
| 20100225006 | CHIPS HAVING REAR CONTACTS CONNECTED BY THROUGH VIAS TO FRONT CONTACTS - A microelectronic unit is provided in which front and rear surfaces of a semiconductor element may define a thin region which has a first thickness and a thicker region having a thickness at least about twice the first thickness. A semiconductor device may be present at the front surface, with a plurality of first conductive contacts at the front surface connected to the device. A plurality of conductive vias may extend from the rear surface through the thin region of the semiconductor element to the first conductive contacts. A plurality of second conductive contacts can be exposed at an exterior of the semiconductor element. A plurality of conductive traces may connect the second conductive contacts to the conductive vias. | 09-09-2010 |
| 20100230795 | STACKED MICROELECTRONIC ASSEMBLIES HAVING VIAS EXTENDING THROUGH BOND PADS - A stacked microelectronic assembly is provided which includes first and second stacked microelectronic elements. Each of the first and second microelectronic elements can include a conductive layer extending along a face of such microelectronic element. At least one of the first and second microelectronic elements can include a recess extending from the rear surface towards the front surface, and a conductive via extending from the recess through the bond pad and electrically connected to the bond pad, with a conductive layer connected to the via and extending along a rear face of the microelectronic element towards an edge of the microelectronic element. A plurality of leads can extend from the conductive layers of the first and second microelectronic elements and a plurality of terminals of the assembly can be electrically connected with the leads. | 09-16-2010 |
| 20100230812 | Microelectronic Assemblies Having Compliancy and Methods Therefor - A microelectronic assembly is disclosed that includes a semiconductor wafer with contacts, compliant bumps of dielectric material overlying the first surface of the semiconductor wafer, and a dielectric layer overlying the first surface of the semiconductor wafer and edges of the compliant bumps. The compliant bumps have planar top surfaces which are accessible through the dielectric layer. Conductive traces may be electrically connected with contacts and extend therefrom to overlie the planar top surfaces of the compliant bumps. Conductive elements may overlie the planar top surfaces in contact with the conductive traces. | 09-16-2010 |
| 20100230828 | MICROELECTRONIC ASSEMBLY WITH IMPEDANCE CONTROLLED WIREBOND AND CONDUCTIVE REFERENCE ELEMENT - A microelectronic assembly can include a microelectronic device having device contacts exposed at a surface thereof and an interconnection element having element contacts and having a face adjacent to the microelectronic device. Conductive elements, e.g., wirebonds connect the device contacts with the element contacts and have portions extending in runs above the surface of the microelectronic device. A conductive layer has a conductive surface disposed at at least a substantially uniform distance above or below the plurality of the runs of the conductive elements. In some cases, the conductive material can have first and second dimensions in first and second horizontal directions which are smaller than first and second corresponding dimensions of the microelectronic device. The conductive material is connectable to a source of reference potential so as to achieve a desired impedance for the conductive elements. | 09-16-2010 |
| 20100232128 | MICROELECTRONIC ASSEMBLY WITH IMPEDANCE CONTROLLED WIREBOND AND REFERENCE WIREBOND - A microelectronic assembly can include a microelectronic device, e.g., semiconductor chip, connected together with an interconnection element, e.g., substrate, the latter having signal contacts and reference contacts. The reference contacts can be connectable to a source of reference potential such as ground or a voltage source other than ground such as a voltage source used for power. Signal conductors, e.g., signal wirebonds can be connected to device contacts exposed at a surface of the microelectronic device. Reference conductors, e.g., reference wirebonds can be provided, at least one of which can be connected with two reference contacts of the interconnection element. The reference wirebond can have a run which extends at an at least substantially uniform spacing from a signal conductor, e.g., signal wirebond that is connected to the microelectronic device over at least a substantial portion of the length of the signal conductor. In such manner a desired impedance may be achieved for the signal conductor. | 09-16-2010 |
| 20100232129 | MICROELECTRONIC PACKAGES AND METHODS THEREFOR - A method of making a microelectronic assembly includes providing a microelectronic package having a substrate, a microelectronic element overlying the substrate and at least two conductive elements projecting from a surface of the substrate, the at least two conductive elements having surfaces remote from the surface of the substrate. The method includes compressing the at least two conductive elements so that the remote surfaces thereof lie in a common plane, and after the compressing step, providing an encapsulant material around the at least two conductive elements for supporting the microelectronic package and so that the remote surfaces of the at least two conductive elements remain accessible at an exterior surface of the encapsulant material. | 09-16-2010 |
| 20100258956 | MICROELECTRONIC PACKAGES AND METHODS THEREFOR - A microelectronic package includes a microelectronic element having faces and contacts, the microelectronic element having an outer perimeter, and a substrate overlying and spaced from a first face of the microelectronic element, whereby an outer region of the substrate extends beyond the outer perimeter of the microelectronic element. The microelectronic package includes a plurality of etched conductive posts exposed at a surface of the substrate and being electrically interconnected with the microelectronic element, whereby at least one of the etched conductive posts is disposed in the outer region of the substrate. The package includes an encapsulating mold material in contact with the microelectronic element and overlying the outer region of the substrate, the encapsulating mold material extending outside of the etched conductive posts for defining an outermost edge of the microelectronic package. | 10-14-2010 |
| 20100270679 | MICROELECTRONIC PACKAGES FABRICATED AT THE WAFER LEVEL AND METHODS THEREFOR - A method of making microelectronic packages includes making a subassembly by providing a plate having a top surface, a bottom surface and openings extending between the top and bottom surfaces, attaching a compliant layer to the top surface of the plate, the compliant layer having openings that are aligned with the openings extending through the plate, and providing electrically conductive features on the compliant layer. After making the subassembly, the bottom surface of the plate is attached with the top surface of a semiconductor wafer so that the openings extending through the plate are aligned with contacts on the wafer. At least some of the electrically conductive features on the compliant layer are electrically interconnected with the contacts on the semiconductor wafer. | 10-28-2010 |
| 20100273293 | SUBSTRATE FOR A MICROELECTRONIC PACKAGE AND METHOD OF FABRICATING THEREOF - Substrates having molded dielectric layers and methods of fabricating such substrates are disclosed. The substrates may advantageously be used in microelectronic assemblies having high routing density. | 10-28-2010 |
| 20110006432 | RECONSTITUTED WAFER STACK PACKAGING WITH AFTER-APPLIED PAD EXTENSIONS - A stacked microelectronic unit is provided which can include a plurality of vertically stacked microelectronic elements ( | 01-13-2011 |
| 20110012259 | PACKAGED SEMICONDUCTOR CHIPS - A chip-sized wafer level packaged device including a portion of a semiconductor wafer including a device, a packaging layer formed over the portion of the semiconductor wafer, the packaging layer including a material having thermal expansion characteristics similar to those of the semiconductor wafer and a ball grid array formed over a surface of the packaging layer and being electrically connected to the device. | 01-20-2011 |
| 20110031629 | EDGE CONNECT WAFER LEVEL STACKING - In accordance with an aspect of the invention, a stacked microelectronic package is provided which may include a plurality of subassemblies, e.g., a first subassembly and a second subassembly underlying the first subassembly. A front face of the second subassembly may confront the rear face of the first subassembly. Each of the first and second subassemblies may include a plurality of front contacts exposed at the front face, at least one edge and a plurality of front traces extending about the respective at least one edge. The second subassembly may have a plurality of rear contacts exposed at the rear face. The second subassembly may also have a plurality of rear traces extending from the rear contacts about the at least one edge. The rear traces may extend to at least some of the plurality of front contacts of at least one of the first or second subassemblies. | 02-10-2011 |
| 20110033979 | EDGE CONNECT WAFER LEVEL STACKING - A method of making a stacked microelectronic package by forming a microelectronic assembly by stacking a first subassembly including a plurality of microelectronic elements onto a second subassembly including a plurality of microelectronic elements, at least some of the plurality of microelectronic elements of said first subassembly and said second subassembly having traces that extend to respective edges of the microelectronic elements, then forming notches in the microelectronic assembly so as to expose the traces of at least some of the plurality of microelectronic elements, then forming leads at the side walls of the notches, the leads being in electrical communication with at least some of the traces and dicing the assembly into packages. Additional embodiments include methods for creating stacked packages using substrates and having additional traces that extend to both the top and bottom of the package. | 02-10-2011 |
| 20110042810 | STACKED PACKAGING IMPROVEMENTS - A plurality of microelectronic assemblies are made by severing an in-process unit including an upper substrate and lower substrate with microelectronic elements disposed between the substrates. In a further embodiment, a lead frame is joined to a substrate so that the leads project from this substrate. Lead frame is joined to a further substrate with one or more microelectronic elements disposed between the substrates. | 02-24-2011 |
| 20110049696 | OFF-CHIP VIAS IN STACKED CHIPS - A microelectronic assembly includes first and second stacked microelectronic elements, each having spaced apart traces extending along a front face and beyond at least a first edge thereof. An insulating region can contact the edges of each microelectronic element and at least portions of the traces of each microelectronic element extending beyond the respective first edges. The insulating region can define first and second side surfaces adjacent the first and second edges of the microelectronic elements. A plurality of spaced apart openings can extend along a side surface of the microelectronic assembly. Electrical conductors connected with respective traces can have portions disposed in respective openings and extending along the respective openings. The electrical conductors may extend to pads or solder balls overlying a face of one of the microelectronic elements. | 03-03-2011 |
| 20110095408 | MICROELECTRONIC ASSEMBLY WITH IMPEDANCE CONTROLLED WIREBOND AND CONDUCTIVE REFERENCE ELEMENT - A microelectronic assembly can include a microelectronic device having device contacts exposed at a surface thereof and an interconnection element having element contacts and having a face adjacent to the microelectronic device. Conductive elements, e.g., wirebonds connect the device contacts with the element contacts and have portions extending in runs above the surface of the microelectronic device. A conductive layer has a conductive surface disposed at least a substantially uniform distance above or below the plurality of the runs of the conductive elements. In some cases, the conductive material can have first and second dimensions in first and second horizontal directions which are smaller than first and second corresponding dimensions of the microelectronic device. The conductive material is connectable to a source of reference potential so as to achieve a desired impedance for the conductive elements. | 04-28-2011 |
| 20110101535 | MICROELECTRONIC ASSEMBLY WITH IMPEDANCE CONTROLLED WIREBOND AND CONDUCTIVE REFERENCE ELEMENT - A microelectronic assembly can include a microelectronic device having device contacts exposed at a surface thereof and an interconnection element having element contacts and having a face adjacent to the microelectronic device. Conductive elements, e.g., wirebonds connect the device contacts with the element contacts and have portions extending in runs above the surface of the microelectronic device. A conductive layer has a conductive surface disposed at least a substantially uniform distance above or below the plurality of the runs of the conductive elements. In some cases, the conductive material can have first and second dimensions in first and second horizontal directions which are smaller than first and second corresponding dimensions of the microelectronic device. The conductive material is connectable to a source of reference potential so as to achieve a desired impedance for the conductive elements. | 05-05-2011 |
| 20110147928 | MICROELECTRONIC ASSEMBLY WITH BOND ELEMENTS HAVING LOWERED INDUCTANCE - Microelectronic assemblies can have multiple conductive bond elements, e.g., bond wires, or a lead bond and a bond wire, extending between a pair of a substrate contact and a chip contact. E.g., a first bond wire can have ends joined to the contacts of the chip and substrate. A second bond wire can be joined to the ends of the first bond wire so that the second bond wire does not touch either the chip contact or the substrate contact to which the first bond wire is joined. In one example, a bond wire has a looped connection with first and second ends joined at a first contact and a middle portion joined to a second contact. In one example, first and second bond elements, e.g., bond wires or lead bonds can connect first and second pairs of a substrate contact with a chip contact. A third bond element, e.g., a bond wire or bond ribbon, can be joined to ends of the first and second bond elements. | 06-23-2011 |
| 20110147953 | MICROELECTRONIC ASSEMBLY WITH JOINED BOND ELEMENTS HAVING LOWERED INDUCTANCE - A microelectronic assembly includes a semiconductor chip having chip contacts exposed at a first face and a substrate juxtaposed with a face of the chip. A conductive bond element can electrically connect a first chip contact with a first substrate contact of the substrate, and a second conductive bond element can electrically connect the first chip contact with a second substrate contact. The first bond element can have a first end metallurgically joined to the first chip contact and a second end metallurgically joined to the first substrate contact. A first end of the second bond element can be metallurgically joined to the first bond element. The second bond element may or may not touch the first chip contact or the substrate contact. A third bond element can be joined to ends of first and second bond elements which are joined to substrate contacts or to chip contacts. In one embodiment, a bond element can have a looped connection, having first and second ends joined at a first contact and a middle portion joined to a second contact. | 06-23-2011 |
| 20110165733 | MICROELECTRONIC PACKAGES AND METHODS THEREFOR - A method of making a microelectronic assembly can include molding a dielectric material around at least two conductive elements which project above a height of a substrate having a microelectronic element mounted thereon, so that remote surfaces of the conductive elements remain accessible and exposed within openings extending from an exterior surface of the molded dielectric material. The remote surfaces can be disposed at heights from said surface of said substrate which are lower or higher than a height of the exterior surface of the molded dielectric material from the substrate surface. The conductive elements can be arranged to simultaneously carry first and second different electric potentials: e.g., power, ground or signal potentials. | 07-07-2011 |
