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Bednorz
Georg J. Bednorz, Wolfhausen CH
| Patent application number | Description | Published |
|---|---|---|
| 20080251777 | Field Effect Device with a Channel with a Switchable Conductivity - A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device. | 10-16-2008 |
Johannes G. Bednorz, Yorktown Heights, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20090305487 | NON-VOLATILE RESISTANCE SWITCHING MEMORY - A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C. | 12-10-2009 |
| 20090308313 | NON-VOLATILE RESISTANCE SWITCHING MEMORY - A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C. | 12-17-2009 |
Johannes G. Bednorz, Wolfhausen CH
| Patent application number | Description | Published |
|---|---|---|
| 20080316905 | Data Storage Device - A storage device including a storage medium for storing data in the form of topographic or magnetic marks. At least one probe is mounted on a common frame, the common frame and the storage medium designed for moving relative to each other for creating or detecting said marks. Each probe includes a tip facing the storage medium, a read sensing element, a write element and a capacitive platform, that forms a first electrode and is designed for a voltage potential applied to it independent from a control signal for said read sensing element and for said voltage potential applied to said capacitive platform being independent from a control signal for said write heating element. It further comprises a second electrode arranged in a fixed position relative to the storage medium forming a first capacitor together wherein said first electrode and a medium between the first and second electrode. | 12-25-2008 |
Thilo Bednorz, Erding DE
| Patent application number | Description | Published |
|---|---|---|
| 20110288820 | METHOD AND NETWORK ANALYZER FOR MEASURING GROUP RUNTIME IN A MEASURING OBJECT - A network analyzer for measuring a group delay time, which is caused by a device under test to be measured, generates an excitation signal comprising two signals (x | 11-24-2011 |