Beaumont, FR
Bernard Beaumont, Valbonne FR
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20090278136 | Process for Growth of Low Dislocation Density Gan - High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced lateral growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading dislocation density below 10 | 11-12-2009 |
Bernard Beaumont, Le Tignet FR
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20100001289 | PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALIUM NITRIDE - A method of manufacturing a low defect density GaN material comprising at least two steps of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially competent layer under first growing conditions selected to induce island features formation, followed by (b.) a second step of growing an epitaxial layer of GaN under second growing conditions selected to enhance lateral growth until coalescence. | 01-07-2010 |
20100074826 | METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF NITRIDE BY EPITAXIAL GROWTH ON A SUBSTRATE PREVENTING GROWTH ON THE EDGES OF THE SUBSTRATE - A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate. | 03-25-2010 |
20110316000 | MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE SUBSTRATES AND DEVICES FABRICATED THEREOF - The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support ( | 12-29-2011 |
20130001586 | SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING - A method for forming a substrate includes forming a base layer comprising a Group III-V material on a substrate, cooling the base layer and inducing cracks in the base layer, and forming a bulk layer comprising a Group III-V material on the base layer after cooling. | 01-03-2013 |
20130001748 | SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING - A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate. | 01-03-2013 |
20130082279 | GROUP III-V SUBSTRATE MATERIAL WITH PARTICULAR CRYSTALLOGRAPHIC FEATURES - A substrate including a body comprising a Group III-V material and having an upper surface, the body comprising an offcut angle defined between the upper surface and a crystallographic reference plane, and the body further having an offcut angle variation of not greater than about 0.6 degrees. | 04-04-2013 |
20130118408 | SYSTEM FOR USE IN THE FORMATION OF SEMICONDUCTOR CRYSTALLINE MATERIALS - A system used in the formation of a semiconductor crystalline material includes a first chamber configured to contain a liquid metal and a second chamber in fluid communication with the first chamber, the second chamber having a greater volume than a volume of the first reservoir chamber. The system further includes a vapor delivery conduit coupled to the first chamber configured to deliver a vapor phase reactant material into the first chamber to react with the liquid metal and form a metal halide vapor phase product. | 05-16-2013 |
20130143394 | SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING - A method of forming a semiconductor substrate including forming a base layer of a Group 13-15 material on a growth substrate during a growth process, forming a mask having mask regions and gap regions overlying the base layer during the growth process, and preferentially removing a portion of the base layer underlying the mask during the growth process. | 06-06-2013 |
20130288455 | METHOD OF FORMING A FREESTANDING SEMICONDUCTOR WAFER - A method of forming a freestanding semiconductor wafer includes providing a semiconductor substrate including a semiconductor layer having a back surface and an upper surface opposite the back surface, wherein the semiconductor layer comprises at least one permanent defect between the upper surface and back surface, removing a portion of the back surface of the semiconductor layer and the permanent defect from the semiconductor layer, and forming a portion of the upper surface after removing a portion of the back surface and the permanent defect. | 10-31-2013 |
20140065801 | Group III-V Substrate Material With Particular Crystallographic Features And Methods Of Making - A method of forming a semiconductor substrate including providing a base substrate including a semiconductor material, and forming a first semiconductor layer overlying the base substrate having a Group 13-15 material via hydride vapor phase epitaxy (HVPE), the first semiconductor layer having an upper surface having a N-face orientation. | 03-06-2014 |
20140185639 | GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS OF MAKING - A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm | 07-03-2014 |
20150076512 | SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING - A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate. | 03-19-2015 |
Cyril Beaumont, La Colle Sur Loup FR
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20090115793 | ENHANCED ALPHA BLENDING - A system including storage comprising a first graphical pixel and a second graphical pixel. Each of the first and second graphical pixels is associated with binary codes having red, green and blue sub-codes. The system also comprises processing logic coupled to the storage and adapted to alpha-blend the first and second graphical pixels to produce a blended pixel. The processing logic performs this alpha-blend using the binary codes having red, green and blue sub-codes in concatenated form and without operating on the sub-codes individually. The processing logic displays the blended pixel. | 05-07-2009 |
Franck Beaumont, Saint Rimay FR
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20100223806 | BURNER, INSTALLATION AND METHOD FOR DRYING DIVIDED PRODUCTS USING SUCH A BURNER - A burner for burning substances, in particular uncondensed offgas from a condenser of a drying installation, is intended to be fed with fuel, oxidizer and substances to be burned. The burner includes an axial feed inlet for feeding the burner with offgas and a set of fuel injection nozzles distributed around the axial feed inlet. | 09-09-2010 |
Francois Beaumont, Saulx-Les-Chartreux FR
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20110315666 | METHOD OF ABLATING A SURFACE LAYER OF A WALL, AND ASSOCIATED DEVICE - The invention relates to a method of ablating a surface layer of a wall by sweeping the said layer, comprising: a step of directional control by an optical deflector of a plurality of pulsed laser beams; a step of ablating the layer on impact zones created by the plurality of laser beams, each impact zone being defined by a centre and by a characteristic dimension; the method is characterized in that the impact zones are disjoint, the distance between each centre of the impact zones being equal to at least ten times the largest characteristic dimension of the impact zones. The invention also relates to a corresponding device. | 12-29-2011 |
Hubert Beaumont, Roquefort Les Pins FR
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20150093007 | SYSTEM AND METHOD FOR THE CLASSIFICATION OF MEASURABLE LESIONS IN IMAGES OF THE CHEST - A system and method for the automated classification of lesions in CT images of the chest between measurable and non-measurable lesions is disclosed. The method comprises the steps of identifying lesions in a CT image, performing repeated measurements of selected metrics on the identified lesions and selecting as measurable lesions those with a variability of less than a pre-defined limit of agreement. Then a training step is carried out relying on a variety of image related features extracted from the lesions. Finally, labeling of lesions according to their likelihood of being consistently measured is performed. | 04-02-2015 |
Jean-Marie Beaumont, Saint Lambert La Potherie FR
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20150368972 | DEVICE FOR ASSISTING IN THE RAISING AND/OR LOWERING OF A PERSON | 12-24-2015 |
Laurent Beaumont, Regneville Sur Mer FR
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20130209623 | SACHET FOR FRUIT AND METHOD FOR PREPARING FRUIT CUT INTO PIECES IN ORDER TO PRESERVE IT IN THE MEDIUM TERM - A sachet for pieces of fruit is in the form of a tubular sachet made of transparent plastic suitable for food, which has, when empty and laid flat, a rectangular shape and in which pieces of dried fruit (MF) are collected, not under vacuum. The sealed sachet, filled with pieces of fruit, is subjected to a brief microwave treatment in order to block the development of microbes and to inhibit enzymes. | 08-15-2013 |
Robert Beaumont, Rillieux La Pape FR
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20080308460 | ENCLOSURE CONTAINING A GRANULAR BED AND A DISTRIBUTION OF A GAS PHASE AND OF A LIQUID PHASE CIRCULATING IN AN ASCENDING FLOW IN THIS ENCLOSURE - The present invention relates to an enclosure ( | 12-18-2008 |
20110083769 | DEVICE FOR LOADING PARTICLES OF CATATLYST INTO TUBES HAVING AN ANNULAR ZONE - A device and method to load particles of catalyst on the order of cm in the principal dimension into an annular zone of reaction tubes which may reach a height of more than 10 metres, while satisfying the strict conditions of homogeneity and density of loading. | 04-14-2011 |
20150258518 | PNEUMATIC SYSTEM FOR DENSELY LOADING CATALYST INTO BAYONET TUBES FOR A STEAM REFORMING REACTOR-EXCHANGER WITH A DETACHABLE FEED TUBE FOR GAS - The present invention describes a device and a method for densely and homogeneously loading catalyst into the annular space of bayonet tubes utilized in a steam reforming reactor, said device being of pneumatic type and using a detachable feed tube for gas. | 09-17-2015 |
20150283528 | SYSTEM FOR DENSE LOADING OF CATALYST INTO BAYONET TUBES FOR A STEAM REFORMING EXCHANGER-REACTOR USING REMOVABLE DEFLECTORS - The present invention describes a device and a method for dense and homogeneous loading of catalyst into the annular space of bayonet tubes employed in a steam reforming reactor, said device being constituted by a series of removable deflectors. | 10-08-2015 |
20150283529 | SYSTEM FOR DENSE LOADING OF CATALYST INTO BAYONET TUBES FOR A STEAM REFORMING EXCHANGER-REACTOR USING FLEXIBLE AND REMOVABLE SLOWING ELEMENTS - The present invention describes a device and a method for dense and homogeneous loading of catalyst into the annular space of bayonet tubes employed in a steam reforming reactor, said device employing removable slowing elements. | 10-08-2015 |
20150298085 | PNEUMATIC SYSTEM FOR DENSE LOADING OF CATALYST INTO BAYONET TUBES FOR A STEAM REFORMING EXCHANGER-REACTOR USING AN AUXILIARY TUBE FOR INTRODUCING SOLID PARTICLES - The present invention describes a device and a method for dense and homogeneous loading of catalyst into the annular space | 10-22-2015 |
20150343404 | SYSTEM FOR DENSE LOADING OF CATALYST INTO BAYONET TUBES FOR A STEAM REFORMING EXCHANGER-REACTOR USING REMOVABLE HELICAL ELEMENTS - The present invention describes a device and a method for dense and homogeneous loading of catalyst into the annular space of bayonet tubes employed in a steam reforming reactor, said device being constituted by a series of removable helical elements. | 12-03-2015 |
Stephane Beaumont, Nieul Le Dolent FR
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20090110250 | Method for generating digital test objects - The object of the present invention is a computer-implemented method for generating digital images encoded into a format readable by medical imaging apparatus, characterized in that it comprises the steps of: | 04-30-2009 |
20100303210 | PHANTOM OBJECT FOR THE QUALITY CONTROL OF A DEVICE FOR RADIATION THERAPY TREATMENT AND METHODS FOR ITS MANUFACTURE AND ITS USE - This phantom object is designed for a Winston-Lutz test on a device for radiation therapy treatment comprising a patient support having a rotation axis (V), a stand having a rotation axis (H) and a collimator having a rotation axis (C), locating means being provided for visually representing the theoretical positions (V′, H′, C′) of the three axes (V, H, C). A spherical ball is positioned at the center of a sphere in a material of electron density lower than that of the ball, the ball and the sphere both constituting the phantom object. The sphere has on its outer surface means for a visual alignment with the locating means allowing a positioning of the phantom object at the point of convergence of the three axes (V′, H′, C′). | 12-02-2010 |
20150343240 | TEST OBJECT FOR THE CORRECTION OF MOTION ARTEFACTS OF A PORTAL IMAGER EQUIPPING AN EXTERNAL RADIATION THERAPY TREATMENT DEVICE WHEN THE EXTERNAL RADIATION THERAPY TREATMENT DEVICE IS MOVING - Disclosed is a test object for an external radiation therapy treatment device, the treatment device including a rotating gantry carrying at one end a radiation head and, at the other end, a portal imager, the test object including a radiologically translucent plate within which at least one radiopaque member is embedded, the at least one radiopaque member forming a geometrical pattern having at least two points and the center of the geometrical pattern corresponding to the center of the radiologically translucent plate, and a fastening element to attach the test object on the radiation head. | 12-03-2015 |
Stéphane Nicolas Alain Beaumont, Romainville FR
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20150080391 | NOVEL COMPOUNDS AND PHARMACEUTICAL COMPOSITIONS THEREOF FOR THE TREATMENT OF PROLIFERATIVE DISORDERS - The present invention discloses compounds according to Formula I: | 03-19-2015 |
Valerie Beaumont, Montreuil FR
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20150346179 | METHOD OF ASSESSING AT LEAST ONE PETROLEUM CHARACTERISTIC OF A ROCK SAMPLE - The invention is a Method of assessing at least one petroleum characteristic of a rock sample. Starting from a temperature ranging between 50° C. and 120° C., the temperature of a rock sample is raised to a temperature ranging between 180° C. and 220° C. which is maintained for a predetermined time duration. The temperature of the sample is increased to a temperature ranging between 330° C. and 370° C. which is maintained for a predetermined time duration. The temperature of the sample is then raised to a temperature ranging between 630° C. and 670° C. Three quantities representative of the amount of hydrocarbon compounds released during the temperature change stages are measured and at least one petroleum characteristic of the sample is deduced from these quantities. | 12-03-2015 |
Valérie Beaumont, Montreuil-Sous-Bois FR
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20110263034 | METHOD AND DEVICE FOR FAST SULFUR CHARACTERIZATION AND QUANTIFICATION IN SEDIMENTARY ROCKS AND PETROLEUM PRODUCTS - The invention relates to a method and to a device for sulfur characterization and quantification in a sample of sedimentary rocks or of petroleum products wherein the following stages are carried out: heating said sample in a pyrolysis oven ( | 10-27-2011 |
Xavier Beaumont, Reims FR
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20080278051 | Light Signaling Device - Luminous signalling device ( | 11-13-2008 |