Patent application number | Description | Published |
20130270608 | HETEROGENEOUS INTEGRATION OF GROUP III NITRIDE ON SILICON FOR ADVANCED INTEGRATED CIRCUITS - Various methods to integrate a Group III nitride material on a silicon material are provided. In one embodiment, the method includes providing a structure including a (100) silicon layer, a (111) silicon layer located on an uppermost surface of the (100) silicon layer, a Group III nitride material layer located on an uppermost surface of the (111) silicon layer, and a blanket layer of dielectric material located on an uppermost surface of the Group III nitride material layer. Next, an opening is formed through the blanket layer of dielectric material, the Group III nitride material layer, the (111) Si layer and within a portion of the (100) silicon layer. A dielectric spacer is then formed within the opening. An epitaxial semiconductor material is then formed on an exposed surface of the (100) silicon layer within the opening and thereafter planarization is performed. | 10-17-2013 |
20130280885 | LASER-INITIATED EXFOLIATION OF GROUP III-NITRIDE FILMS AND APPLICATIONS FOR LAYER TRANSFER AND PATTERNING - A pulsed laser-initiated exfoliation method for patterning a Group III-nitride film on a growth substrate is provided. This method includes providing a Group III-nitride film a growth substrate, wherein a growth substrate/Group III-nitride film interface is present between the Group III-nitride film and the growth substrate. Next, a laser is selected that provides radiation at a wavelength at which the Group III-nitride film is transparent and the growth substrate is absorbing. The interface is then irradiated with pulsed laser radiation from the Group III-nitride film side of the growth substrate/Group III-nitride film interface to exfoliate a region of the Group III-nitride from the growth substrate. A method for transfer a Group-III nitride film from a growth substrate to a handle substrate is also provided. | 10-24-2013 |
20140131722 | DUAL PHASE GALLIUM NITRIDE MATERIAL FORMATION ON (100) SILICON - A method for selective formation of a dual phase gallium nitride material on a (100) silicon substrate. The method includes forming a blanket layer of dielectric material on a surface of a (100) silicon substrate. The blanket layer of dielectric material is then patterned forming a plurality of patterned dielectric material structures on silicon substrate. An etch is employed that selectively removes exposed portions of the silicon substrate. The etch forms openings within the silicon substrate that expose a surface of the silicon substrate having a (111) crystal plane. A contiguous AlN buffer layer is then formed on exposed surfaces of each patterned dielectric material structure and on exposed surfaces of the silicon substrate. A dual phase gallium nitride material is then formed on a portion of the contiguous AlN buffer layer and surrounding each sidewall of each patterned dielectric material structure. | 05-15-2014 |
20140131724 | SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON - A method for selective formation of a gallium nitride material on a (100) silicon substrate. The method includes forming a blanket layer of dielectric material on a surface of a (100) silicon substrate. The blanket layer of dielectric material is then patterned forming a plurality of patterned dielectric material structures on silicon substrate. An etch is employed that selectively removes exposed portions of the silicon substrate. The etch forms openings within the silicon substrate that expose a surface of the silicon substrate having a (111) crystal plane. A contiguous AlN buffer layer is then formed on exposed surfaces of each patterned dielectric material structure and on exposed surfaces of the silicon substrate. A gallium nitride material is then formed on a portion of the contiguous AlN buffer layer and surrounding each sidewall of each patterned dielectric material structure. | 05-15-2014 |
20140134830 | SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON - A method for selective formation of a gallium nitride material on a (100) silicon substrate. The method includes forming a blanket layer of dielectric material on a surface of a (100) silicon substrate. The blanket layer of dielectric material is then patterned forming a plurality of patterned dielectric material structures on silicon substrate. An etch is employed that selectively removes exposed portions of the silicon substrate. The etch forms openings within the silicon substrate that expose a surface of the silicon substrate having a (111) crystal plane. A contiguous AlN buffer layer is then formed on exposed surfaces of each patterned dielectric material structure and on exposed surfaces of the silicon substrate. A gallium nitride material is then formed on a portion of the contiguous AlN buffer layer and surrounding each sidewall of each patterned dielectric material structure. | 05-15-2014 |
20140191283 | GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES - A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III nitride material is grown atop the mesa surface portions of the patterned substrate and atop the recessed surface. Growth of the Group III nitride material is continued merging the Group III nitride material that is grown atop the mesa surface portions. When the Group III nitride material located atop the mesa surface portions merge, the Group III nitride material growth on the recessed surface ceases. The merged Group III nitride material forms a first Group III nitride material structure, and the Group III nitride material formed in the recessed surface forms a second material structure. The first and second material structures are disjoined from each other and are separated by an air gap. | 07-10-2014 |
20140191284 | GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES - A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III nitride material is grown atop the mesa surface portions of the patterned substrate and atop the recessed surface. Growth of the Group III nitride material is continued merging the Group III nitride material that is grown atop the mesa surface portions. When the Group III nitride material located atop the mesa surface portions merge, the Group III nitride material growth on the recessed surface ceases. The merged Group III nitride material forms a first Group III nitride material structure, and the Group III nitride material formed in the recessed surface forms a second material structure. The first and second material structures are disjoined from each other and are separated by an air gap. | 07-10-2014 |
20140217356 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES - An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack. | 08-07-2014 |
20140220764 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES - A method for wafer transfer includes forming a spreading layer, including graphene, on a single crystalline SiC substrate. A semiconductor layer including one or more layers is formed on and is lattice matched to the crystalline SiC layer. The semiconductor layer is transferred to a handle substrate, and the spreading layer is split to remove the single crystalline SiC substrate. | 08-07-2014 |
20150035123 | CURVATURE COMPENSATED SUBSTRATE AND METHOD OF FORMING SAME - A curvature-control-material (CCM) is formed on one side of a substrate prior to forming a Group III nitride material on the other side of the substrate. The CCM possess a thermal expansion coefficient (TEC) that is lower than the TEC of the substrate and is stable at elevated growth temperatures required for formation of a Group III nitride material. In some embodiments, the deposition conditions of the CCM enable a flat-wafer condition for the Group III nitride material maximizing the emission wavelength uniformity of the Group III nitride material. Employment of the CCM also reduces the final structure bowing during cool down leading to reduced convex substrate curvatures. In some embodiments, the final structure curvature can further be engineered to be concave by proper selection of CCM properties, and via controlled selective etching of the CCM, this method enables the final structure to be flat. | 02-05-2015 |
20150083036 | GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME - A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate. | 03-26-2015 |
20150084074 | GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME - A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate. | 03-26-2015 |
20150122329 | SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH NON-CRYSTALLINE WIDE BAND GAP EMITTER - A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material is non-crystalline and has a thickness that is no greater than 50 nm. | 05-07-2015 |
20150179428 | CONTROLLED SPALLING OF GROUP III NITRIDES CONTAINING AN EMBEDDED SPALL RELEASING PLANE - A spall releasing plane is formed embedded within a Group III nitride material layer. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions that provide the Group III nitride material layer and embed the spall releasing plane. The spall releasing plane provides a weakened material plane region within the Group III nitride material layer which during a subsequently performed spalling process can be used to release one of the portions of Group III nitride material from the original Group III nitride material layer. In particular, during the spalling process crack initiation and propagation occurs within the spall releasing plane embedded within the original Group III nitride material layer. | 06-25-2015 |
Patent application number | Description | Published |
20120199056 | CONFORMAL ELECTRONIC DEVICE - A method for manufacturing a conformal electronic device includes securing an electrically-conductive fiber to a fabric or substrate using an assistant thread. | 08-09-2012 |
20130144554 | MICROWAVE PROBE FOR FURNACE REFRACTORY MATERIAL - Disclosed is a system and method to aid in these inspections that avoid the disadvantages of the prior art. The system and method are operative to take thickness measurements of, and thus evaluate the condition of, materials including but not limited to refractory materials, operating in frequency bands that result in less loss than previously known technologies, and utilizing a system configuration and signal processing techniques that isolate the reflected signal of interest from other spurious antenna reflections, particularly by creating (through the configuration of the antenna assembly) a time delay between such spurious reflections and the actual reflected signal of interest, thus enabling better isolation of the signal of interest. Still further, the antenna assembly is intrinsically matched to the material to be probed, such as by impedance matching the antenna to the particular material (through knowledge of the dielectric and magnetic properties of the material to be evaluated) to even further suppress spurious reflections. | 06-06-2013 |
20140340279 | ADAPTIVE ANTENNA FEEDING AND METHOD FOR OPTIMIZING THE DESIGN THEREOF - Disclosed is an antenna feeding system and method to optimize the design of the feeding system to feed an antenna made of a resistive sheet. The system and method are operative to design a topology of the antenna feeding system to adapt to a topology of the resistive sheet antenna to mitigate the adverse effects caused by the inherent losses of resistive sheets while operating as antennas. The system is designed to reduce a convergence of radiofrequency currents that may create a localized high density current concentration, such as “hot spots” and “pinch points,” on the resistive sheet, by a sufficient extent so as to prevent power losses that substantially decrease the radiation efficiency of the antenna as compared with feeding systems designed using traditional design techniques. | 11-20-2014 |
20150061961 | DESENSITIZED ANTENNA AND DESIGN METHOD THEREOF - Disclosed is an antenna system and method to design a desensitized antenna element. The system and method are operative to design a configuration of an antenna to overcome a number of operational conditions in which the frequency response of the antenna element may be uniquely or significantly detuned or offset or in which undesired noise, signal interference, or electromagnetic coupling effects may affect or be induced by the antenna element. These operational conditions may include the presence of any combination of user body parts, conductive materials, or dielectric materials as well as neighboring electronic systems or other sources of undesired noise, signal interference, and electromagnetic coupling. The system is designed to mitigate adverse effects, when operating in a potentially antenna-detuning environment or under conditions that may affect other systems or be susceptible to being affected by other sources, by using a desensitizer element comprising at least one electrical circuit component. | 03-05-2015 |
Patent application number | Description | Published |
20100095740 | DETERMINING PHYSICAL PROPERTIES OF STRUCTURAL MEMBERS IN MULTI-PATH CLUTTER ENVIRONMENTS - A method for determining a physical property of an object in a multi-path clutter environment comprises transmitting an RF interrogation signal to a wireless sensor physically coupled to the object or the fluid in the multi-path clutter environment, wherein the wireless sensor is operable to receive the RF interrogation signal, produce a reference signal and a measurement signal, and transmit the reference signal and the measurement signal in the multi-path clutter environment. The reference signal and measurement signal are delayed by the wireless sensor by an amount of time that may be a function of the unknown physical property. The method also comprises receiving the transmitted reference signal and the transmitted measurement signal and comparing them in the time domain in order to determine the unknown physical property of the object or the fluid. | 04-22-2010 |
20110001655 | DETERMINING PHYSICAL PROPERTIES OF STRUCTURAL MEMBERS IN DYNAMIC MULTI-PATH CLUTTER ENVIRONMENTS - A method for determining a physical property of a structural member in a dynamic multi-path clutter environment is given. The method comprises transmitting an RF interrogation signal to a wireless sensor operable to receive the RF interrogation signal, produce a reference signal and a measurement signal, and transmit the reference signal and the measurement signal in the dynamic multi-path clutter environment. The reference signal is delayed by a first time delay and the measurement signal is delayed by a second time delay that is a function of the physical property to be determined. The first and second time delays are associated by a known relationship defined by the wireless sensor. The method further comprises receiving the transmitted reference signal and the transmitted measurement signal and comparing the transmitted reference signal and the transmitted measurement signal in the time domain. Finally, the method comprises using this comparison to determine the physical property of the structural member. | 01-06-2011 |
20120192617 | DETERMINING PHYSICAL PROPERTIES OF OBJECTS OR FLUIDS IN MULTI-PATH CLUTTER ENVIRONMENTS - A method for determining a physical property of an object or fluid in a dynamic multi-path clutter environment comprises transmitting an RF interrogation signal to a wireless sensor physically coupled to the object or fluid (gas or liquid) in the dynamic multi-path clutter environment, wherein the wireless sensor is operable to receive the RF interrogation signal, produce a reference signal and a measurement signal, and retransmit the reference signal and the measurement signal in the dynamic multi-path clutter environment. The reference signal and measurement signal are delayed by the wireless sensor by an amount of time that may be a function of the unknown physical property. The method also comprises receiving the retransmitted reference signal and the retransmitted measurement signal and comparing them in the time domain in order to determine the unknown physical property of the object or fluid. The method further comprises setting the time delays of the retransmitted reference and retransmitted measurement signals to be long enough for the ringdown time to be over but not so long so that the differential time is distorted by the dynamics of the system. | 08-02-2012 |