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Barbaros
Barbaros Oezyilmaz, Singapore SG
| Patent application number | Description | Published |
|---|---|---|
| 20110170330 | Graphene Memory Cell and Fabrication Methods Thereof - The disclosed memory cell ( | 07-14-2011 |
Barbaros Ozyilmaz, Singapore SG
| Patent application number | Description | Published |
|---|---|---|
| 20090140801 | Locally gated graphene nanostructures and methods of making and using - A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described. | 06-04-2009 |
| 20110038198 | ELECTRONIC DEVICES BASED ON CURRENT INDUCED MAGNETIZATION DYNAMICS IN SINGLE MAGNETIC LAYERS - The present invention generally relates to magnetic devices used in memory and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, the present invention is directed to a single ferromagnetic layer device in which an electrical current is used to control and change magnetic configurations as well as induce high frequency magnetization dynamics. The magnetic layer includes full spin-polarized magnetic material, which may also have non-uniform magnetization. The non-uniform magnetization is achieved by varying the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as compact microwave sources, detectors, mixers and phase shifters. | 02-17-2011 |
Barbaros Ozyilmaz, Brooklyn, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080259508 | HIGH SPEED LOW POWER MAGNETIC DEVICES BASED ON CURRENT INDUCED SPIN-MOMENTUM TRANSFER - A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device. | 10-23-2008 |
Barbaros Sekerkiran, Istanbul TR
| Patent application number | Description | Published |
|---|---|---|
| 20100066480 | COMPACT DISTRIBUTED LADDER ATTENUATOR - Simple and compact structures for an attenuator or resistor ladder can be implemented in a standard integrated circuit process as well as hybrid, thick or thin film ceramic processes, which allows metallization along with resistive components. The structure has the mathematical property that it attenuates an applied reference voltage logarithmically/exponentially along its length because of the natural solution of the Laplace equation for this type of geometry and contact configuration. | 03-18-2010 |