Patent application number | Description | Published |
20120320672 | MEMORY DEVICE READOUT USING MULTIPLE SENSE TIMES - A method for data storage includes storing data in a group of analog memory cells by writing respective storage values into the memory cells in the group. One or more of the memory cells in the group are read using a first readout operation that senses the memory cells with a first sense time. At least one of the memory cells in the group is read using a second readout operation that senses the memory cells with a second sense time, longer than the first sense time. The data stored in the group of memory cells is reconstructed based on readout results of the first and second readout operations. | 12-20-2012 |
20130117606 | DATA PROTECTION FROM WRITE FAILURES IN NONVOLATILE MEMORY - A method includes calculating redundancy information over a set of data items, and sending the data items for storage in a memory. The redundancy information is retained only until the data items are written successfully in the memory, and then discarded. The data items are recovered using the redundancy information upon a failure in writing the data items to the memory. | 05-09-2013 |
20130297989 | Memory Device Readout Using Multiple Sense Times - A method for data storage includes storing data in a group of analog memory cells by writing respective storage values into the memory cells in the group. One or more of the memory cells in the group are read using a first readout operation that senses the memory cells with a first sense time. At least one of the memory cells in the group is read using a second readout operation that senses the memory cells with a second sense time, longer than the first sense time. The data stored in the group of memory cells is reconstructed based on readout results of the first and second readout operations. | 11-07-2013 |
20140056066 | READ THRESHOLD ESTIMATION IN ANALOG MEMORY CELLS USING SIMULTANEOUS MULTI-VOLTAGE SENSE - A method includes dividing a group of analog memory cells into multiple subsets. The memory cells in the group are sensed simultaneously by performing a single sense operation, while applying to the subsets of the memory cells respective different sets of read thresholds, so as to produce respective readout results. An optimal set of the read thresholds is estimated by processing the multiple readout results obtained from the respective subsets using the different sets of the read thresholds. | 02-27-2014 |
20140201596 | Adaptation of Analog Memory Cell Read Thresholds Using Partial ECC Syndromes - A method includes storing data that is encoded with an Error Correction Code (ECC) in a group of analog memory cells. The memory cells in the group are read using multiple sets of read thresholds. The memory cells in the group are divided into two or more subsets. N partial syndromes of the ECC are computed, each partial syndrome computed over readout results that were read using a respective set of the read thresholds from a respective subset of the memory cells. For each possible N-bit combination of N bit values at corresponding bit positions in the N partial syndromes, a respective count of the bit positions in which the combination occurs is determined, so as to produce a plurality of counts. An optimal set of read thresholds is calculated based on the counts, and data recovery is performed using the optimal read thresholds. | 07-17-2014 |
20140325310 | THRESHOLD ADJUSTMENT USING DATA VALUE BALANCING IN ANALOG MEMORY DEVICE - A method, in a memory including multiple analog memory cells, includes segmenting a group of the memory cells into a common section and at least first and second dedicated sections. Each dedicated section corresponds to a read threshold that is used for reading a data page to be stored in the group. Data to be stored in the group is jointly balanced over a union of the common section and the first dedicated section, and over the union of the common section and the second dedicated section, to create a balanced page such that for each respective read threshold an equal number of memory cells will be programmed to assume programming levels that are separated by the read threshold. The balanced page is stored to the common and dedicated sections, and the read thresholds are adjusted based on detecting imbalance between data values in readout results of the balanced page. | 10-30-2014 |
20140331106 | CALCULATION OF ANALOG MEMORY CELL READOUT PARAMETERS USING CODE WORDS STORED OVER MULTIPLE MEMORY DIES - A method includes, in a memory that includes two or more memory units, storing a code word of an Error Correction Code (ECC) that is representable by a plurality of check equations, such that a first part of the code word is stored in a first memory unit and a second part of the code word is stored in a second memory unit. A subset of the check equations, which operate only on code word bits belonging to the first part stored in the first memory unit, is identified. The first part of the code word is retrieved from the first memory unit, and a count of the check equations in the identified subset that are not satisfied by the retrieved first part of the code word is evaluated. One or more readout parameters, for readout from the first memory unit, are set depending on the evaluated count. | 11-06-2014 |
20140355341 | READ THRESHOLD ESTIMATION IN ANALOG MEMORY CELLS USING SIMULTANEOUS MULTI-VOLTAGE SENSE - A method includes dividing a group of analog memory cells into multiple subsets. The memory cells in the group are sensed simultaneously by performing a single sense operation, while applying to the subsets of the memory cells respective different sets of read thresholds, so as to produce respective readout results. An optimal set of the read thresholds is estimated by processing the multiple readout results obtained from the respective subsets using the different sets of the read thresholds. | 12-04-2014 |