Patent application number | Description | Published |
20080258191 | CAPACITOR DEVICE PROVIDING SUFFICIENT RELIABILITY - A capacitor device includes a dielectric layer configured to have a composition represented as (Ba | 10-23-2008 |
20080266033 | HIGH FREQUENCY FILTER HAVING RESONANCE PATTERN OF MICROSTRIP LINE OR STRIP LINE STRUCTURE - A resonance pattern ( | 10-30-2008 |
20080269062 | BANDPASS FILTER AND FORMING METHOD OF THE SAME - A bandpass filter capable of creating a dual mode with a simple configuration and stably adjusting the filter characteristics of the bandpass filter is disclosed. The bandpass filter includes a dielectric base substrate; a disk resonator formed over the dielectric base substrate; and a dielectric block disposed over a part of the dielectric base substrate and in substantially the same plane as the disk resonator. | 10-30-2008 |
20080297284 | DUAL-MODE FILTER AND TUNING METHOD OF THE SAME - A dual-mode filter capable of providing a high degree of design freedom and/or tunability is disclosed. The dual-mode filter includes a ring resonator; an input feeder and an output feeder disposed substantially orthogonal with respect to each other and with respect to the ring resonator so as to be electromagnetically coupled to the ring resonator; and a dual-mode generating line disposed inside the ring resonator in a manner so that the dual-mode generating line does not overlap with a line extending from the input feeder or a line extending from the output feeder. | 12-04-2008 |
20090273880 | VARIABLE CAPACITOR AND FILTER CIRCUIT WITH BIAS VOLTAGE - A variable capacitor includes a metal oxide film having a perovskite structure, first and second electrode films having the metal oxide film placed therebetween and to be coupled to an external voltage source, and a bias voltage source configured to provide a bias voltage that is applied in series or parallel to a capacitance of a capacitor including the metal oxide film and the first and second electrode films, wherein the bias voltage applied by the bias voltage source to the capacitance is adapted to maximize a voltage dependency of a relative permittivity of the metal oxide film. | 11-05-2009 |