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| 20110062557 | 3D POLYSILICON DIODE WITH LOW CONTACT RESISTANCE AND METHOD FOR FORMING SAME - A semiconductor p-i-n diode and method for forming the same are described herein. In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode. The SiGe region may serve to lower the contact resistance, which may increase the forward bias current. The doped region extends below the SiGe region such that it is between the SiGe region and an intrinsic region of the diode. The p-i-n diode may be formed from silicon. The doped region below the SiGe region may serve to keep the reverse bias current from increasing as result of the added SiGe region. In one embodiment, the SiGe is formed such that the forward bias current of an up-pointing p-i-n diode in a memory array substantially matches the forward bias current of a down-pointing p-i-n diode which may achieve better switching results when these diodes are used with the R/W material in a 3D memory array. | 03-17-2011 |
| 20110085370 | SOFT FORMING REVERSIBLE RESISTIVITY-SWITCHING ELEMENT FOR BIPOLAR SWITCHING - A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and is generally understood to refer to reducing the resistance for the first time. Prior to forming the reversible resistivity-switching element it may be in a high-resistance state. A first voltage is applied to “partially form” the reversible resistivity-switching element. The first voltage has a first polarity. Partially forming the reversible resistivity-switching element lowers the resistance of the reversible resistivity-switching element. A second voltage that has the opposite polarity as the first is then applied to the reversible resistivity-switching element. Application of the second voltage may further lower the resistance of the reversible resistivity-switching element. Therefore, the second voltage could be considered as completing the forming of the reversible resistivity-switching element. | 04-14-2011 |
| 20110140064 | CARBON/TUNNELING-BARRIER/CARBON DIODE - A carbon/tunneling-barrier/carbon diode and method for forming the same are disclosed. The carbon/tunneling-barrier/carbon may be used as a steering element in a memory array. Each memory cell in the memory array may include a reversible resistivity-switching element and a carbon/tunneling-barrier/carbon diode as the steering element. The tunneling-barrier may include a semiconductor or an insulator. Thus, the diode may be a carbon/semiconductor/carbon diode. The semiconductor in the diode may be intrinsic or doped. The semiconductor may be depleted when the diode is under equilibrium conditions. For example, the semiconductor may be lightly doped such that the depletion region extends from one end of the semiconductor region to the other end. The diode may be a carbon/insulator/carbon diode. | 06-16-2011 |
| 20110169126 | In-situ passivation methods to improve performance of polysilicon diode - A nonvolatile memory cell including a storage element in series with a diode steering element. At least one interface of the diode steering element is passivated. | 07-14-2011 |
| 20110176352 | NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTALLINE SEMICONDUCTOR MATERIAL - A nonvolatile memory cell is described, the memory cell comprising a semiconductor diode. The semiconductor material making up the diode is formed with significant defect density, and allows very low current flow at a typical read voltage. Application of a programming voltage permanently changes the nature of the semiconductor material, resulting in an improved diode. The programmed diode allows much higher current flow, in some embodiments one, two or three orders of magnitude higher, at the same read voltage. The difference in current allows a programmed memory cell to be distinguished from an unprogrammed memory cell. Fabrication techniques to generate an advantageous unprogrammed defect density are described. The memory cell of the present invention can be formed in a monolithic three dimensional memory array, having multiple stacked memory levels formed above a single substrate. | 07-21-2011 |
| 20110205782 | STEP SOFT PROGRAM FOR REVERSIBLE RESISTIVITY-SWITCHING ELEMENTS - A method and system for forming, resetting, or setting memory cells is disclosed. One or more programming conditions to apply to a memory cell having a reversible resistivity-switching element may be determined based on its resistance. The determination of one or more programming conditions may also be based on a pre-determined algorithm that may be based on properties of the memory cell. The one or more programming conditions may include a programming voltage and a current limit. For example, the magnitude of the programming voltage may be based on the resistance. As another example, the width of a programming voltage pulse may be based on the resistance. In some embodiments, a current limit used during programming is determined based on the memory cell resistance. | 08-25-2011 |
| 20110280059 | ALTERNATING BIPOLAR FORMING VOLTAGE FOR RESISTIVITY-SWITCHING ELEMENTS - A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and may refer to reducing the resistance for the first time. Prior to forming the reversible resistivity-switching element it may be in a high-resistance state. The method may comprise alternating between applying one or more first voltages having a first polarity to the memory cell and applying one or more second voltages having a second polarity that is opposite the first polarity to the memory cell until the reversible resistivity-switching memory element is formed. There may be a rest period between applying the voltages of opposite polarity. | 11-17-2011 |
| 20110310655 | Composition Of Memory Cell With Resistance-Switching Layers - A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided. | 12-22-2011 |
| 20120074367 | COUNTER DOPING COMPENSATION METHODS TO IMPROVE DIODE PERFORMANCE - A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming a memory element coupled in series with the diode. Other aspects are also provided. | 03-29-2012 |
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| 20090068272 | MESOPOROUS CALCIUM SILICATE COMPOSITIONS AND METHODS FOR SYNTHESIS OF MESOPOROUS CALCIUM SILICATE FOR CONTROLLED RELEASE OF BIOACTIVE AGENTS - Mesoporous calcium silicate compositions for controlled release of bioactive agents and methods for producing such compositions are disclosed herein. In one embodiment, mesoporous calcium silicate is synthesized by acid modification of wollastonite particles using hydrochloric acid. A hydrated silica gel layer having abundant Si—OH functional groups can be formed on the surface of wollastonite after acid modification. Bruhauer-Emmett-Teller (BET) surface area increased significantly due to acid modification and, in one arrangement, reached over 350 m | 03-12-2009 |
| 20090093881 | MODIFIED METAL MATERIALS, SURFACE MODIFICATIONS TO IMPROVE CELL INTERACTIONS AND ANTIMICROBIAL PROPERTIES, AND METHODS FOR MODIFYING METAL SURFACE PROPERTIES - The present disclosure is directed to modified metal materials for implantation and/or bone replacement, and to methods for modifying surface properties of metal substrates for enhancing cellular adhesion (tissue integration) and providing antimicrobial properties. Some embodiments comprise surface coatings for metal implants, such as titanium-based materials, using (1) electrochemical processing and/or oxidation methods, and/or (2) laser processing, in order to enhance bone cell-materials interactions and achieve improved antimicrobial properties. One embodiment comprises the modification of a metal surface by growth of in situ nanotubes via anodization, followed by electrodeposition of silver on the nanotubes. Other embodiments include the use of LENS™ processing to coat a metal surface with calcium-based bioceramic composition layers. These surface treatment methods can be applied as a post-processing operation to metallic implants such as hip, knee and spinal devices as well as screws, pins and plates. | 04-09-2009 |
| 20090276056 | RESORBABLE CERAMICS WITH CONTROLLED STRENGTH LOSS RATES - Particular aspects provide bioresorbable and biocompatible compositions for bioengineering, restoring or regenerating tissue or bone, comprising a three-dimensional porous or non-porous scaffold material comprising a calcium phosphate-based ceramic having at least one dopant therein selected from metal ion or ion dopants and metal oxide dopants, wherein the composition is sufficiently biocompatible to provide for a cell or tissue scaffold, and resorbable at a controlled resorption rate for controlled stregthloss, depending on dopant composition, under body, body fluid or simulated body fluid conditions. Preferably, the at least one dopant is selected from the group consisting of Zn | 11-05-2009 |
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| 20100118726 | SYSTEMS AND METHODS FOR REDUCING REFLECTIONS AND FREQUENCY DEPENDENT DISPERSIONS IN REDUNDANT LINKS - A network device includes a group of high speed redundant transmission lines and a switch. The switch is configured to select one of the high speed redundant transmission lines. The switch causes reflections and frequency dependent dispersions in the selected high speed redundant transmission line. The network device further includes a transmitting device that is configured to adjust signals transmitted over the selected high speed redundant transmission line so as to reduce the reflections and frequency dependent dispersions. | 05-13-2010 |
| 20100165983 | SYSTEM ARCHITECTURE FOR A SCALABLE AND DISTRIBUTED MULTI-STAGE SWITCH FABRIC - In some embodiments, an apparatus includes a first housing, a second housing and at least one cable. The first housing includes a first interface card of a switch fabric. The second housing includes a second interface card of the switch fabric and a third interface card of the switch fabric. The second interface card of the switch fabric is operatively and physically coupled to the third interface card of the switch fabric via a midplane. The second interface card defines a plane that is nonparallel to the a plane defined by the third interface card and a plane defined by the midplane. The plane defined by the third interface card is nonparallel to the plane defined by the second interface card and the plane defined by the midplane. The cable is configured to operatively couple the first interface card to the second interface card. | 07-01-2010 |
| 20100165984 | METHODS AND APPARATUS RELATED TO A MODULAR SWITCH ARCHITECTURE - In some embodiments, an apparatus includes a first housing, a second housing and at least one cable. The first housing includes a first interface card of a switch fabric. The second housing includes a second interface card of the switch fabric and a third interface card of the switch fabric. The second interface card of the switch fabric is operatively and physically coupled to the third interface card of the switch fabric via a midplane. The second interface card defines a plane that is nonparallel to the a plane defined by the third interface card and a plane defined by the midplane. The plane defined by the third interface card is nonparallel to the plane defined by the second interface card and the plane defined by the midplane. The cable is configured to operatively couple the first interface card to the second interface card. | 07-01-2010 |
| 20110097082 | APPARATUS, SYSTEMS, AND METHODS RELATED TO IMPROVED OPTICAL COMMUNICATION MODULES - In one embodiment, a system includes a first cable interface module, a second cable interface module, and an interface card. The first cable interface module includes a signal recovery module. The second cable interface module does not include a signal recovery module. The interface card includes a first interface module and a second interface module. The first interface module is configured to be coupled to the first cable interface module at a first time and to the second cable interface module at a second time. The second interface module is configured to be coupled to the remaining cable of the first cable interface module and the second cable interface module. | 04-28-2011 |
| 20110158087 | SYSTEMS AND METHODS FOR REDUCING REFLECTIONS AND FREQUENCY DEPENDENT DISPERSIONS IN REDUNDANT LINKS - A network device includes a group of high speed redundant transmission lines and a switch. The switch is configured to select one of the high speed redundant transmission lines. The switch causes reflections and frequency dependent dispersions in the selected high speed redundant transmission line. The network device further includes a transmitting device that is configured to adjust signals transmitted over the selected high speed redundant transmission line so as to reduce the reflections and frequency dependent dispersions. | 06-30-2011 |
| 20110267942 | METHODS AND APPARATUS FOR FLOW CONTROL ASSOCIATED WITH A SWITCH FABRIC - In some embodiments, an apparatus includes a switch fabric having at least a first switch stage and a second switch stage, an edge device operatively coupled to the switch fabric and a management module. The edge device is configured to send a first portion of a data stream to the switch fabric such that the first portion of the data stream is received at a queue of the second switch stage of the switch fabric via the first switch stage of the switch fabric. The management module is configured to send a flow control signal configured to trigger the edge device to suspend transmission of a second portion of the data stream when a congestion level of the queue of the second switch stage of the switch fabric satisfies a condition in response to the first portion of the data stream being received at the queue. | 11-03-2011 |
| 20110307718 | DYNAMIC FABRIC PLANE ALLOCATION FOR POWER SAVINGS - In one embodiment, a method includes accessing a first utilization value, accessing a second utilization value, defining a third utilization value, and sending to a first switching portion of a distributed network switch a deactivate signal in response to the third utilization value. The first utilization value is associated with the first switching portion of the distributed network switch. The second utilization value is associated with a second switching portion of the distributed network switch. The third utilization value is associated with the second switching portion of the distributed network switch and is based on the first utilization parameter and the second utilization parameter. The first switching portion of the distributed network switch ceases communication within the distributed network switch in response to the deactivate signal. | 12-15-2011 |
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| 20080248225 | COLD SHRINKABLE ARTICLE INCLUDING A FLUOROELASTOMER COMPOSITION - A tubular cold shrinkable material can include an elastomeric composition including a fluoroelastomer composition, where the elastomeric composition is substantially free of an epichlorohydrin composition. The tubular cold shrinkable material can further include a filler material including a reinforcement-grade carbon black. The tubular cold shrinkable material can further include a peroxide curative. | 10-09-2008 |
| 20080249240 | FLUOROELASTOMER COMPOSITION FOR COLD SHRINK ARTICLES - A composition includes an elastomeric composition. The elastomeric composition can include a fluoroelastomer composition, and the elastomeric composition is substantially free of an epichlorohydrin composition. The composition can further include a filler material which includes a reinforcement-grade carbon black. The composition can further include a peroxide curative. | 10-09-2008 |
| 20080280080 | COLD SHRINKABLE ARTICLE INCLUDING AN EPICHLOROHYDRIN COMPOSITION - A tubular cold shrinkable material can include an elastomeric composition including an epichlorohydrin composition, where the elastomeric composition is substantially free of a fluoroelastomer composition. The tubular cold shrinkable material can further include a filler material including a reinforcement-grade carbon black. The tubular cold shrinkable material can further include a peroxide curative. | 11-13-2008 |
| 20080281032 | COLD SHRINKABLE ARTICLE INCLUDING AN EPICHLOROHYDRIN COMPOSITION - A composition includes an elastomeric composition. The elastomeric composition can include an epichlorohydrin composition, and the elastomeric composition can be substantially free of a fluoroelastomer composition. The composition can further include a filler material which includes a reinforcement-grade carbon black. The composition can further include a peroxide curative. | 11-13-2008 |
| 20090065236 | ARTICLE AND METHOD FOR SEALING FLUID-CONTAINING CABLES - A cable has a conductor extending therefrom and a partially exposed fluid-containing layer surrounding the conductor. A connector is joined to an end of the conductor, and an electrically insulative, elastomeric tube is covers all of the exposed fluid-containing layer and a portion of the connector. The elastomeric tube is substantially impermeable to the fluid in the cable. For cables having more than one conductor, an additional elastomeric boot is installed over the cable. | 03-12-2009 |
| 20090065237 | PRESSURE RESTRAINING ENCLOSURE FOR CABLES - A pressure restraining enclosure for cables can include, for example, a first cable including a conductor and an oil-containing layer surrounding the conductor, and a second cable having a conductor. A splice can connect the conductor of the first cable with the conductor of the second cable. A pressure restraining sleeve can overly the splice and the conductors of the first and second cables. Several fasteners can be applied to several locations on the pressure restraining sleeve to tighten the pressure restraining sleeve around the splice and portions of the first and second cable. Embodiments of the pressure restraining enclosure can be used in the form of a sleeve on a single core cable, or alternatively as a body and a separate sleeve on multiple core cables such as three-core cables. | 03-12-2009 |
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| 20090076670 | Olivo-Cerebellar Controller - Non-linear control laws are disclosed and implemented with a controller and control system for maneuvering an underwater vehicle. The control laws change the phase of one Inferior-Olive (IO) neuron with respect to another IO. One control law is global, that is, the control law works (stable and convergent) for any initial condition. The remaining three control laws are local. The control laws are obtained by applying feedback linearization, while retaining non-linear characteristics. Each control law generates a profile (time history) of the control signal to produce a desired phase difference recognizable by a controller to respond to disturbances and to maneuver an underwater vehicle. | 03-19-2009 |
| 20090274465 | High-Speed Underwater Data Transmission System and Method - An underwater data transmission system including arrays of nano-meter scaled photon emitters and sensors on an outer surface of an underwater platform. For the emitters, a laser is pulsed to correlate with data packets, providing a beam of photons at a prescribed frequency. Nano-scaled collecting lenses channel the incoming photons to photo-receptors located at a focal plane for the frequency at the base of each lens. A coating on the lenses absorbs photons at the frequency that are not aligned with the longitudinal axes of the lenses or tubes. Nano-wires connect the photo-receptors to a light intensity integrator. The integrator integrates the intensity over a surface area. The output of the integrator is fed to a signal processor to track and process the arriving digital packets. | 11-05-2009 |
| 20110243564 | High Speed Underwater Data Transmission Method - An underwater data transmission system including arrays of nano-meter scaled photon emitters and sensors on an outer surface of an underwater platform. For the emitters, a laser is pulsed to correlate with data packets, providing a beam of photons at a prescribed frequency. Nano-scaled collecting lenses channel the incoming photons to photo-receptors located at a focal plane for the frequency at the base of each lens. A coating on the lenses absorbs photons at the frequency that are not aligned with the longitudinal axes of the lenses or tubes. Nano-wires connect the photo-receptors to a light intensity integrator. The integrator integrates the intensity over a surface area. The output of the integrator is fed to a signal processor to track and process the arriving digital packets. | 10-06-2011 |
| 20110253971 | Photo-Receptor for Electro-Magnetic Radiation Collection - An underwater data transmission system including arrays of nano-meter scaled photon emitters and sensors on an outer surface of an underwater platform. For the emitters, a laser is pulsed to correlate with data packets, providing a beam of photons at a prescribed frequency. Nano-scaled collecting lenses channel the incoming photons to photo-receptors located at a focal plane for the frequency at the base of each lens. A coating on the lenses absorbs photons at the frequency that are not aligned with the longitudinal axes of the lenses or tubes. Nano-wires connect the photo-receptors to a light intensity integrator. The integrator integrates the intensity over a surface area. The output of the integrator is fed to a signal processor to track and process the arriving digital packets. | 10-20-2011 |
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| 20100325721 | IMAGE-BASED UNLOCK FUNCTIONALITY ON A COMPUTING DEVICE - Utilizing an image on a computing device to serve as a template for locking/unlocking the computing device. The image includes a plurality of portions that are defined and thereafter identified and presented to a user via a touch screen. A user selects portions/zones that are defined within the image in a specified sequence and this sequence is stored as a lock/unlock code for unlocking the computing device. In an embodiment, in addition to the specified sequence of selections, a movement or sequence of movements may be also be stored as part of the lock/unlock code. | 12-23-2010 |
| 20120009896 | ABOVE-LOCK CAMERA ACCESS - Apparatus and methods are disclosed for allowing smart phone users to “capture the moment” by allowing easy access to a camera application when a mobile device is in an above-lock (or locked) mode, while also preventing unauthorized access to other smart phone functionality. According to one embodiment of the disclosed technology, a method of operating a mobile device having an above-lock state and a below-lock state comprises receiving input data requesting invocation of an camera application when the mobile device is in the above-lock state and invoking the requested camera application on the device, where one or more functions of the requested application are unavailable as a result of the mobile device being in the above-lock state. | 01-12-2012 |
| 20120071149 | PREVENTION OF ACCIDENTAL DEVICE ACTIVATION - The present application allows wake-up and unlock operations to occur using a single event, such as a single keystroke. Additionally, a check is made to ensure that activation was caused by human touch, not an object. In one embodiment, an area of a mobile device is designated as a wake-up area, which is separate from the touch screen. A user can touch the wake-up area to both activate the mobile device from a sleep mode and unlock the mobile device. In another embodiment, the wake-up area can be integrated into the touch screen, so that there is not an appearance of a separate button. Fingerprint checking and/or proximity sensors can also be integrated into the mobile device. | 03-22-2012 |
