| Patent application number | Description | Published |
|---|
| 20080303117 | Integrated circuit with multi-stage matching circuit - An integrated circuit with a multi-stage matching circuit with an inductive conductive structures with a first end and a second end in the integrated circuit and a capacitor structure in the integrated circuit connected to a tap between the ends of the inductive conductive structure between the inductive conductive structure and a reference potential. | 12-11-2008 |
| 20080303165 | CIRCUIT ARRANGEMENT AND INTEGRATED CIRCUIT - A circuit arrangement includes a plurality of type-identical and identically operated active components, or separate sections of an active component, and includes a branched wiring structure for the interconnection of component connections. In each case the wiring end portions lie between a branching point and an input of different components or sections, wherein the wiring end portions are formed with predetermined geometrical asymmetry with respect to one another in such a way that there is an electrical symmetry of the interconnection configuration between all the connected type-identical components or sections. More particularly, the impedance values between the branching point and the different inputs and outputs are substantially identical. | 12-11-2008 |
| 20110026174 | Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same - An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type. | 02-03-2011 |
