| Patent application number | Description | Published |
|---|
| 20100243300 | Soldering Method and Related Device for Improved Resistance to Brittle Fracture - A lead-free solder joint is formed between a tin-silver-copper solder alloy (SAC), SACX, or other commonly used Pb-free solder alloys, and a metallization layer of a substrate. Interaction of the SAC with the metallization layer forms an intermetallic compound (IMC) that binds the solder mass to the metallization layer. The IMC region is substantially free of any phosphorous-containing layers or regions. | 09-30-2010 |
| 20110053378 | Dielectric Etching - An etchant for dielectrics, such as silicon dioxide, that leaves monocrystalline silicon surface exposed by the etchant free of etch damage, such as etch pits, when the etch is done in the presence of transition metals, such as copper, tungsten, titanium, gold, etc. The etchant comprises hydrofluoric acid and a source of halide anion, such as hydrochloric acid or a metal-halide. The etchant is useful in microelectromechanical system device fabrication and in deprocessing integrated circuits or the like. | 03-03-2011 |
| Patent application number | Description | Published |
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| 20090029490 | Method of fabricating an electronic device - It has been found that for silicon integrated circuits having capacitor structures or other p-n junctions structure at a technology node of 32 nm or smaller, photovoltaic induced corrosion of copper in the metallization stack is a significant issue. Thus processing conditions or device configurations are employed that preclude such corrosion. In one embodiment photovoltaic induced corrosion is monitored to prevent completion of devices with corrosion defects. | 01-29-2009 |
| 20090298286 | Method of making electronic entities - Many electronic entities such as integrated circuits and discrete power devices have contact pads formed from successively deposited layers of nickel and a second metal such as gold. The resulting pad structure is used to make external electrical connection such as solder connection. Problems associated with failure of such connections are avoidable by inspecting the surface of the nickel layer for excessive small particle formation. | 12-03-2009 |
| 20100102398 | Material removing processes in device formation and the devices formed thereby - Devices having voids are producible by employing an electrochemical corrosion process. For example, an electrically conductive region is formed to have a surrounding chemically distinct region. Such formation is possible through conventional semiconductor processing techniques such as a copper damascene process. The surrounded conducting material is configured to be in electrical communication with a charge separation structure. The electrically conducting region is contacted with a fluid electrolyte and electromagnetic radiation is made to illuminate the charge separation region to induce separation of electrons and holes. The resulting separated charges are used to drive an electrochemical corrosion process at the conductive material/electrolyte interface resulting in the removal of at least a portion of the electrically conducting material. The induced corrosion leaves a void that is useful, for example, as a highly effective dielectric in integrated circuits, functions to allow component separation such as gear separation in microelectromechanical devices or produces long cavities useful for material separation analogous to the distillation columns used in liquid chromatography. | 04-29-2010 |
| 20100300741 | ALUMINUM BOND PADS WITH ENHANCED WIRE BOND STABILITY - An electronic device bond pad includes an Al layer located over an electronic device substrate. The Al layer includes an intrinsic group 10 metal located therein. | 12-02-2010 |
| 20100319967 | INHIBITION OF COPPER DISSOLUTION FOR LEAD-FREE SOLDERING - A device fabrication method, according to which a tin-copper-alloy layer is formed adjacent to a copper-plated pad or pin that is used to electrically connect the device to external wiring. Advantageously, the tin-copper-alloy layer inhibits copper dissolution during a solder reflow process because that layer is substantially insoluble in liquid Sn—Ag—Cu (tin-silver-copper) solder alloys under typical solder reflow conditions and therefore shields the copper plating from direct physical contact with the liquefied solder. | 12-23-2010 |
| 20110163419 | ALLOTROPIC OR MORPHOLOGIC CHANGE IN SILICON INDUCED BY ELECTROMAGNETIC RADIATION FOR RESISTANCE TURNING OF INTEGRATED CIRCUITS - An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology. | 07-07-2011 |
