Bailey, Iii
Andre D. Bailey, Iii, Pleasanton, CA US
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20140051255 | COPPER DISCOLORATION PREVENTION FOLLOWING BEVEL ETCH PROCESS - A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the bevel etcher after the bevel edge etching is completed; flowing defluorinating gas into the bevel etcher; energizing the defluorinating gas into a defluorination plasma at a periphery of the semiconductor substrate; and processing the semiconductor substrate with the defluorination plasma under conditions to prevent discoloration of the exposed copper surfaces of the semiconductor substrate upon exposure, the discoloration occurring upon prolonged exposure to air. | 02-20-2014 |
Andrew Bailey, Iii, Pleasanton, CA US
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20100175830 | LOW-K DAMAGE AVOIDANCE DURING BEVEL ETCH PROCESSING - A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO | 07-15-2010 |
20130299089 | LOW-K DAMAGE AVOIDANCE DURING BEVEL ETCH PROCESSING - An apparatus for etching a bevel edge of a substrate includes a bevel etch chamber and a controller including non-transitory computer readable media. The computer readable media includes computer readable code for providing a cleaning gas comprising at least one of a CO | 11-14-2013 |
20150034589 | SYSTEM AND METHOD FOR FORMING PATTERNED COPPER LINES THROUGH ELECTROLESS COPPER PLATING - A method for forming copper on a substrate including inputting a copper source solution into a mixer, inputting a reducing solution into the mixer, mixing copper source solution and the reducing solution to form a plating solution having a pH of greater than about 6.5 and applying the plating solution to a substrate, the substrate including a catalytic layer wherein applying the plating solution to the substrate includes forming a catalytic layer, maintaining the catalytic layer in a controlled environment and forming copper on the catalytic layer. A system for forming copper structures is also disclosed. | 02-05-2015 |
Andrew C. Bailey, Iii, Pleasanton, CA US
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20090088887 | OFFSET CORRECTION TECHNIQUES FOR POSITIONING SUBSTRATES WITHIN A PROCESSING CHAMBER - A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center. | 04-02-2009 |
Andrew D. Bailey, Iii, San Jose, CA US
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20130122711 | SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL - A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe. | 05-16-2013 |
20130126486 | Multi Zone Gas Injection Upper Electrode System - A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones. | 05-23-2013 |
Andrew D. Bailey, Iii, Fremont, CA US
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20130126476 | DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES - A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber. | 05-23-2013 |
20140060739 | RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR - Methods and apparatus for operating the plasma processing chamber of a plasma processing tool in at least two modes are disclosed. In the first mode, the substrate-bearing assembly is movable within a gap-adjustable range to adjust the gap between the electrodes to accommodate different processing requirements. In this first mode, RF ground return path continuity is maintained irrespective of the gap distance as long as the gap distance is within the gap-adjustable range. In the second mode, the substrate bearing assembly is capable of moving to further open the gap to accommodate unimpeded substrate loading/unloading. | 03-06-2014 |
Claude W. Bailey, Iii, Warren, MI US
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20080276901 | COVER ASSEMBLY FOR AN INTERNAL COMBUSTION ENGINE - A cover assembly is provided, such as a camshaft cover or valve cover, for an internal combustion engine. The cover assembly includes a cover member with a contoured surface. An acoustic barrier member is generally coextensive with the cover member and at least partially approximates the contoured surface. An elastic member is mounted with respect to the acoustic barrier member and spans at least a portion of the acoustic barrier member. A plate member is mounted with respect to the elastic member and is operable to retain the elastic member and the acoustic barrier member with respect to the cover member. The plate member spans substantially the entirety of the elastic member. | 11-13-2008 |
Claude Weston Bailey, Iii, Warren, MI US
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20150300223 | OIL SEPARATOR IN A POSITIVE CRANKCASE VENTILATION SYSTEM OF AN ENGINE - An oil separator in a positive crankcase ventilation (PCV) system is described herein. The oil separator includes an oil separation conduit in fluidic communication with an intake conduit and an oil reservoir and an entry conduit including an entry conduit orifice arranged at an angle of between 80 and 100 degrees with regard to the oil separation conduit, the entry conduit orifice opening into the separation conduit at a point between the separation conduit outlet and the separation conduit inlet. | 10-22-2015 |
Wade H. Bailey, Iii, Emmaus, PA US
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20080279746 | Process for the Fluorination of Boron Hydrides - A process for fluorination of borohydride salts including providing a reaction medium comprising HF and a superacid. A borohydride salt compound is added to the reaction medium. The borohydride salt is reacted with the with the reaction medium under conditions to form a fluorinated borohydride salt. In addition, reactor vessels may be provided for reacting the HF, superacid additive and borohydride that are fabricated from materials resistant to superacid compositions. | 11-13-2008 |
Wade Hampton Bailey, Iii, Emmaus, PA US
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20090297925 | Dodecaborate Salt Radical Anion Compositions and Methods for Making and Using Such Compositions - The disclosure relates to new compositions comprising an, B | 12-03-2009 |
20120045589 | Amidate Precursors For Depositing Metal Containing Films - Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described. | 02-23-2012 |
20120121806 | Complexes Of Imidazole Ligands - Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated. | 05-17-2012 |
20130030191 | Group IV Metal Complexes For Metal-Containing Film Deposition - Metal-containing complexes with general formula (1) (R | 01-31-2013 |
20130078391 | Complexes Of Imidazole Ligands - Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated. | 03-28-2013 |
William Raymond Bailey, Iii, West Hartford, CT US
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20100070198 | HYDROGEN EMISSION REPORTING SYSTEM AND METHOD THEREOF - The present invention provides a system and method for monitoring and reporting the controlled and uncontrolled emissions of hydrogen gas from an end use application such as a hydrogen cooled electrical generator. The system first determines a quantity hydrogen produced by a hydrogen conversion device from a first operating parameter. The quantity of hydrogen released in a controlled manner is determined from a second operating parameter. The amount of uncontrolled hydrogen emissions may then be calculated from the produced hydrogen and controlled release values. A report detailing the type and amounts of hydrogen emissions may then be created. | 03-18-2010 |