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Baeg
Dae-Sung Baeg, Ansan City KR
| Patent application number | Description | Published |
|---|---|---|
| 20120082708 | NOVEL METHOD FOR PREPARING COMPOSITE PARTICLE COMPRISING SURFACE TREATMENT LAYER OF SUNSCREENING AGENT FORMED THEREON - The present invention relates to a method of preparing a composite powder comprising a surface treatment layer of sunscreen. The present invention prepares a composite powder comprising a surface treatment layer of sunscreen by a dry process that does not require separate dehydration and drying processes, and thus, the prepared composite powder may be uniformly surface-treated with more quantities of sunscreens compared to a composite powder comprising a surface treatment layer of sunscreen prepared by a conventional wet process, may exhibit remarkably improved sun screen effect, and be useful for a cosmetic composition. | 04-05-2012 |
Hyeong-Seong Baeg, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20100138921 | Countering Against Distributed Denial-Of-Service (DDOS) Attack Using Content Delivery Network - Method and apparatus for blocking a distributed denial-of-service (DDoS) attack are provided. It is first determined whether a traffic status of an origin server is based on the DDoS attack. When it is determined that the traffic status of the origin server is based on the DDoS attack, a DNS is requested to change an Internet protocol (IP) address of the origin server to the IP address of at least one of plural servers. Accordingly, it is possible to accept a normal service providing request and also to determined and block the DDoS attack. In addition, since a device for determining and blocking the DDoS attack need not be installed in each site or server, it is possible to efficiently determine and block the DDoS attack at reduced cost. | 06-03-2010 |
Kang-Jan Baeg, Gwangju-City KR
| Patent application number | Description | Published |
|---|---|---|
| 20110284082 | POLYMER CONTAINING THIOPHENE UNIT AND THIENYLENEVINYLENE UNIT, AND ORGANIC FIELD EFFECT TRANSISTOR AND ORGANIC SOLAR CELL CONTAINING THE POLYMER - Provided are a polymer containing a thiophene unit and a thienylenevinylene unit, and an organic field effect transistor and an organic solar cell containing the polymer. The film may be formed by coating a substrate with a polymer containing a thiophene unit and a thienylenevinylene unit using a solution process. Therefore, the production cost may be reduced and a large-scale device may be suitably manufactured since there is no need for an expensive vacuum system to form films. Also, the polymer according to one embodiment of the present invention containing a thiophene unit and a thienylenevinylene unit has very excellent flatness since the thiophene unit is continuously coupled with a vinyl group having excellent flatness. Therefore, the polymer may be useful in further improving the charge mobility since it has high crystallinity caused by the improved ordering property between molecules. Such crystallinity may be further improved by the heat treatment. In addition, the organic compound according to one embodiment of the present invention containing a thienylenevinylene unit may have high oxidative stability because of its high ionization energy. | 11-24-2011 |
Kang-Jun Baeg, Buk-Gu KR
| Patent application number | Description | Published |
|---|---|---|
| 20100140596 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided is an organic thin film transistor and method of forming the same. The organic thin film transistor can decrease threshold voltage and driving voltage by forming a thin organic dielectric layer in a lamella structure using a diblock copolymer including a hydrophilic polymer with high permittivity and a hydrophobic polymer with low permittivity together. Also, the method can simplify the manufacturing process by forming an organic dielectric layer including polymers having two different physical properties through one spin coating. | 06-10-2010 |
Kang-Jun Baeg, Gwangju KR
| Patent application number | Description | Published |
|---|---|---|
| 20090152538 | THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME - Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture. | 06-18-2009 |
| 20100035376 | METHOD OF LOCALLY CRYSTALLIZING ORGANIC THIN FILM AND METHOD OF FABRICATING ORGANIC THIN FILM TRANSISTOR USING THE SAME - A method of partially crystallizing an organic thin film and a method of fabricating an organic thin film transistor (OTFT) are provided. An organic thin film used as an active layer of an OTFT is partially coated with an organic solvent by direct graphic art printing or partially annealed by laser beam irradiation, thereby local improving the crystallinity of the organic thin film. The charge mobility of the OTFT can be improved and crosstalk between devices can be reduced without additional patterning the organic thin film. | 02-11-2010 |
| 20100108996 | COMPOSITION FOR ORGANIC THIN FILM TRANSISTOR, ORGANIC THIN FILM TRANSISTOR FORMED BY USING THE SAME, AND METHOD FOR FORMING THE ORGANIC FILM TRANSISTOR - Provided are a composition for organic thin film transistors including a material including an anthracenyl group and a cross-linker including a maleimide group, an organic thin film transistor formed by using the composition, and a method for manufacturing the same. | 05-06-2010 |
| 20110177653 | THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME - Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture. | 07-21-2011 |
Sang Hyeon Baeg, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110227600 | METHOD OF TESTING SEMICONDUCTOR DEVICE - A method of testing a semiconductor device is provided. In order to provide the same conditions and application of electrical power as a test process in which characteristic functions of a semiconductor device are tested, the number of removal power pins is set. The final number of power pins that can be provided during a normal operation is determined by setting the number of removal power pins. The final number of power pins represents the minimum number of power pins that are requested to be connected for the normal operation of the semiconductor device, and is met by removing a timing margin during the operation of the semiconductor device. Afterwards, a delay test pattern that can be used during a scan mode is applied. When it is determined to be defective by the delay test pattern, a cycle of the delay test pattern is increased. The increased cycle of the delay test pattern may increase the number of switching operations in the delay test pattern or offset ground bouncing caused by excessive current requested per unit time, so that an overkill phenomenon in which a good semiconductor device is determined to be defective can be prevented. | 09-22-2011 |