| Patent application number | Description | Published |
|---|
| 20090284284 | Sense Amplifier and Electronic Apparatus Using the Same - A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected. | 11-19-2009 |
| 20090322716 | Semiconductor Device - There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance ( | 12-31-2009 |
| 20100073348 | Pulse Output Circuit, Shift Register and Display Device - A drive circuit of a display device, which comprise only single conductive TFTs and in which amplitude of an output signal is normal, is provided. | 03-25-2010 |
| 20100090994 | Image Display Device and Driving Method Thereof - An occupying area of a digital system signal line driver circuit in an image display device is large and this hinders the miniaturization of the display device. A memory circuit and a D/A converter circuit in the signal line driver circuit are commonly used for n (“n” is a natural number equal to or larger than 2) signal lines. One horizontal scanning period is divided into n periods and the memory circuit and the D/A converter circuit each perform processing for different signal lines during each of the divided periods. Thus, all the signal lines can be driven. Therefore, the number of memory circuits and the number of D/A converter circuits in the signal line driver circuit can be reduced to one n-th in a conventional case. | 04-15-2010 |
| 20110006306 | LIGHT EMITTING DEVICE - A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving. | 01-13-2011 |
| 20110043254 | Sense Amplifier and Electronic Apparatus Using the Same - A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected. | 02-24-2011 |
| 20110149189 | Semiconductor Device - There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance ( | 06-23-2011 |
