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Awaya, JP
Ichiro Awaya, Nagoya-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100264315 | HYDROCARBON CONCENTRATION MEASURING APPARATUS AND HYDROCARBON CONCENTRATION MEASURING METHOD - This invention provides a hydrocarbon concentration measuring apparatus, which, even when the concentration and composition of hydrocarbons contained in an object gas to be measured vary, can measure the concentration of the hydrocarbons with good response and good accuracy, and a hydrocarbon measuring method. Light with a waveband including a common absorption region, which is absorbed by a single or a plurality of chemical species, is applied to the object gas by an infrared irradiation equipment. The light applied to the object gas is detected with a line sensor. The absorbance in the common absorption region of the object gas is computed with an analyzer based on the detected light. The sum of concentrations of chemical species, which absorb light in the waveband in the common absorption region, in the single or plurality of chemical species contained in the object gas, is computed with the analyzer based on the absorbance. | 10-21-2010 |
Nobuyoshi Awaya, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20090273964 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises: a two terminal structured variable resistive element, wherein resistive characteristics defined by current-voltage characteristics at both ends transit between low and high resistance states stably by applying a voltage satisfying predetermined conditions to the both ends, a transition from the low resistance state to the high resistance state occurs by applying a voltage of a first polarity whose absolute value is at or higher than a first threshold voltage, and the reverse transition occurs by applying a voltage of a second polarity whose absolute value is at or higher than a second threshold voltage; a load circuit connected to the variable resistive element in series having an adjustable load resistance; and a voltage generation circuit for applying a voltage to both ends of a serial circuit; wherein the variable resistive element can transit between the states by adjusting a resistance of the load circuit. | 11-05-2009 |
| 20100080037 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - Provided is a nonvolatile semiconductor device capable of performing writing operations of different resistance changes for memory cells having variable resistive elements whose resistive characteristics are changed by voltage applications, individually and simultaneously. The device comprises: a load resistive characteristic variable circuit for each bit line connected commonly with the memory cells on the same column for selecting one of two load resistive characteristics according to a first writing operation where the resistive characteristics of the variable resistive element to be written transit from a low resistance state to a high resistance state or a second writing operation where they transit reversely; and a writing voltage pulse application circuit for applying a first voltage pulse in a first writing operation and a second voltage pulse in a second writing operation to the memory cells to be written through the load resistive characteristic variable circuits and the bit limes. | 04-01-2010 |
| 20100172170 | VARIABLE RESISTIVE ELEMENT, MANUFACTURING METHOD FOR SAME, AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer. | 07-08-2010 |
| 20100219392 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD FOR SAME - A three-dimensional memory cell array of memory cells with two terminals having a variable resistive element is formed such that: one ends of memory cells adjacent in Z direction are connected to one of middle selection lines extending in Z direction aligned in X and Y directions; the other ends of the memory cells located at the same point in Z direction are connected to one of third selection lines aligned in Z direction; a two-dimensional array where selection transistors are aligned in X and Y directions is adjacent to the memory cell array in Z direction; gates of selection transistors adjacent in X direction, drains of selection transistors adjacent in Y direction and sources of selection transistors are connected to same first selection line, second selection line, and different middle selection lines, respectively; and first, second and third selection lines are connected to X, Y and Z decoders, respectively. | 09-02-2010 |
Nobuyoshi Awaya, Osaka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100080038 | SEMICONDUCTOR MEMORY DEVICE - An inexpensive nonvolatile memory having high performance which makes random write and readout possible an unlimited number of times is provided. A unit memory cell is formed of a MISFET having a channel body that is electrically isolated from a semiconductor substrate and a resistance change element having a two-terminal structure with one end electrically connected to a drain of the MISFET. The MISFET functions as a volatile memory element, and the resistance change element functions as a nonvolatile memory element, so that information stored in the MISFET is copied to the resistance change element before the power is turned OFF and information stored in the resistance change element is transferred to the MISFET when the power is turned ON, and thus, the MISFET is used as a volatile memory which makes random write and readout possible. | 04-01-2010 |
Nobuyoshi Awaya, Fukuyama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090147558 | VARIABLE RESISTANCE ELEMENT, METHOD FOR PRODUCING THE SAME, AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE - The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase. | 06-11-2009 |
Tetsuro Awaya, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080260439 | CLEANING APPARATUS AND IMAGE FORMING APPARATUS - A cleaning device includes a cleaning blade for contacting to a rotatable image bearing member and removing toner from the image bearing member; an auxiliary cleaning member, disposed upstream of the cleaning blade with respect to a rotational direction of the image bearing member, for assisting cleaning operation of the cleaning blade; and a sheet contacted to the auxiliary cleaning member and to a surface of the cleaning blade which is remote from the image bearing member. | 10-23-2008 |
| 20100308526 | SHEET PROCESSING APPARATUS AND IMAGE FORMING APPARATUS - A sheet processing apparatus that forms asperity on a sheet bundle, which includes plural sheets, so as to bind the sheet bundle, includes: a pair of rotating members having a concave and convex portions on the outer periphery; a moving portion that moves at least one of the pair of the rotating members so as to nip the sheet bundle by the pair of the rotating members or release the sheet bundle; and a controlling portion that controls the moving portion to allow the pair of rotating members to rotate with a concave portion of one rotating member and a convex portion of the other meshed with each other while nipping the sheet bundle or releasing the sheet bundle. | 12-09-2010 |
Tomoharu Awaya, Kawasaki JP
| Patent application number | Description | Published |
|---|---|---|
| 20080230874 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer. | 09-25-2008 |