| Patent application number | Description | Published |
|---|
| 20090072234 | Test Stuctures for development of metal-insulator-metal (MIM) devices - In the present electronic test structure comprising, a conductor is provided, overlying a substrate. An electronic device overlies a portion of the conductor and includes a first electrode connected to the conductor, a second electrode, and an insulating layer between the first and second electrodes. A portion of the conductor is exposed for access thereto. | 03-19-2009 |
| 20090109598 | Metal-insulator-metal (MIM) device and method of formation thereof - In a method of fabricating a metal-insulator-metal (MIM) device, initially, a first electrode is provided. An oxide layer is provided on the first electrode, and a protective layer is provided on the oxide layer. An opening through the protective layer is provided to expose a portion of the oxide layer, and a portion of the first electrode underlying the exposed portion of the oxide layer is oxidized. A second electrode is provided in contact with the exposed portion of the oxide layer. In alternative embodiments, the initially provided oxide layer may be eliminated, and spacers of insulating material may be provided in the opening. | 04-30-2009 |
| 20090109727 | Erase, programming and leakage characteristics of a resistive memory device - The present method provides annealing of a resistive memory device so as to provide that the device in its erased state has a greatly increased resistance as compared to a prior art approach. The annealing also provides that the device may be erased by application of any of a plurality of electrical potentials within an increased range of electrical potentials as compared to the prior art. | 04-30-2009 |
| 20090163018 | Method to prevent alloy formation when forming layered metal oxides by metal oxidation - The present method of fabricating a resistive memory device includes the steps of providing a first electrode, oxidizing a portion of the first electrode with an oxidizing agent, providing a metal body on the oxidized portion of the first electrode, oxidizing the entire metal body with an oxidizing agent, and providing a second electrode on the oxidized metal body. | 06-25-2009 |
| 20090212283 | Diode and resistive memory device structures - In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode. | 08-27-2009 |
| 20110027992 | MEMORY DEVICE WITH IMPROVED DATA RETENTION - The present memory device include first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second and into which ions from the passive layer may be provided, and from which the ions may be provided into the passive layer. The active layer is made up of a base material and an impurity therein. The combined the material and impurity have a lower diffusion coefficient than the base material alone. | 02-03-2011 |
