| Patent application number | Description | Published |
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| 20090179195 | Organic Luminescence Transistor Device and Manufacturing Method Thereof - The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on a side of an upper surface of the luminescent layer. | 07-16-2009 |
| 20100176384 | Organic luminescence transistor device and manufacturing method thereof - The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on a side of an upper surface of the luminescent layer. | 07-15-2010 |
| 20100244710 | Organic Luminescence Transistor Device and Manufacturing Method Thereof - Disclosed is an organic light-emitting transistor device comprising a substrate, a first electrode layer formed on the upper side of the substrate, a multilayer structure formed locally on the upper side of the first electrode layer in a predetermined size and sequentially having an insulating layer, an auxiliary electrode layer and a charge injection-suppressing layer in this order, an organic EL layer formed on the upper side of the first electrode layer where at least the multilayer structure is not formed, and a second electrode layer formed on the upper side of the organic EL layer. This organic light-emitting transistor device is characterized in that the charge injection-suppressing layer is formed larger than the auxiliary electrode when viewed in plan. | 09-30-2010 |
| Patent application number | Description | Published |
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| 20090072734 | ORGANIC EL DISPLAY DEVICE, METHOD OF MANUFACTURING ORGANIC EL DISPLAY DEVICE, ORGANIC TRANSISTOR, AND METHOD OF MANUFACTURING ORGANIC TRANSISTOR - It is an object to provide an organic EL display device having the organic transistor of less performance deterioration, a method of manufacturing the organic EL display device, an organic transistor, and a method of manufacturing the organic transistor. | 03-19-2009 |
| 20090135105 | LIGHT-EMITTING ELEMENT AND DISPLAY APPARATUS USING THE SAME - A light-emitting element comprises an auxiliary electrode provided on a substrate; an insulating layer provided on the auxiliary electrode; a first electrode supported by the insulating layer; a carrier injection layer made of an organic conductive material having carrier injecting property, and making contact with the first electrode; a light emission layer supported by the carrier injection layer; and a second electrode supported by the light emission layer, and a carrier dispersion layer having lower resistance than the carrier injection layer is provided between the carrier injection layer and the light emission layer. With this arrangement, a light-emitting element having good light emission characteristics in-a pixel is provided. | 05-28-2009 |
| 20090140955 | LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE - A light-emitting element that comprises a light emission layer that is deposited between first and second electrodes that lie opposite one another in parallel, an organic semiconductor layer that is deposited between the light emission layer and the first electrode, and an auxiliary electrode that is disposed via an insulation layer on the opposite side of the face of the first electrode opposite the second electrode, the light-emitting element further comprising a third electrode that is disposed inside the organic semiconductor layer. | 06-04-2009 |
| 20090315043 | ORGANIC LIGHT-EMITTING TRANSISTOR AND DISPLAY DEVICE - An organic light-emitting transistor having a source electrode layer; a drain electrode layer facing the source electrode layer; an organic light-emitting layer formed between the source electrode layer and the drain electrode layer; a semiconductor layer formed between the organic light-emitting layer and the source electrode layer; and a gate electrode layer deposited to face through a gate insulation film to one face of the source electrode layer opposite to the other face facing the drain electrode layer. The organic light-emitting transistor further comprises: a charge-carrier suppression layer formed between the organic light-emitting layer and the source electrode layer to have an aperture; and a relay region formed between the charge-carrier suppression layer and the source electrode layer to relay charge-carriers from the source electrode layer to the aperture. | 12-24-2009 |
| 20100044890 | SEMICONDUCTOR SUBSTRATE MANUFACTURE APPARATUS, SEMICONDUCTOR SUBSTRATE MANUFACTURE METHOD, AND SEMICONDUCTOR SUBSTRATE - [Problems] To perform predetermined processing such as annealing and coating application of a semiconductor material with high accuracy on a number of semiconductor formation areas formed over a wide region on a surface of a substrate having elasticity such as a plastic substrate even when the substrate expands and contracts. | 02-25-2010 |
