| Patent application number | Description | Published |
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| 20100226401 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure | 09-09-2010 |
| 20110031522 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 02-10-2011 |
| 20110037088 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 02-17-2011 |
| 20110037089 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 02-17-2011 |
| 20110101372 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A nitride-based semiconductor light-emitting device | 05-05-2011 |
| 20110156048 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 06-30-2011 |
| 20110159667 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S | 06-30-2011 |
| 20110234466 | ANTENNA ELEMENT-WAVEGUIDE CONVERTER AND RADIO COMMUNICATION DEVICE USING THE SAME - An antenna element-waveguide converter includes an antenna substrate having, on one surface, an antenna element and rectangular metal plates arranged in a plurality of rows to surround this antenna element, and a waveguide having, at one end, an opening opposed to the one surface of the antenna substrate. Surfaces of the rectangular metal plates and the opening of the waveguide are arranged with a predetermined gap left therebetween in a direction perpendicular to the one surface of the antenna substrate. Thus arranging the antenna substrate and the waveguide avoids a stress due to assembly variations, which can achieve favorable antenna characteristics. | 09-29-2011 |
| 20110248307 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A nitride-based semiconductor light-emitting device | 10-13-2011 |
| 20110248308 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-13-2011 |
| 20110253976 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-20-2011 |
| 20110253977 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-20-2011 |
| 20110284905 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 11-24-2011 |
| 20120002134 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ILLUMINATING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING ILLUMINATING DEVICE - An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure | 01-05-2012 |
| 20120002693 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure | 01-05-2012 |
| 20120085986 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE - The light-emitting diode element of this invention includes: an n-type GaN substrate ( | 04-12-2012 |
| 20120113656 | LIGHT-EMITTING DIODE - A light-emitting diode element includes: an n-type conductive layer | 05-10-2012 |
| Patent application number | Description | Published |
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| 20080303062 | SEMICONDUCTOR DEVICE WITH STRAIN IN CHANNEL REGION AND ITS MANUFACTURE METHOD - A first film made of SiGe is formed over a support substrate whose surface layer is made of Si. A gate electrode is formed over a partial area of the first film, and source and drain regions are formed in the surface layer of the support substrate on both sides of the gate electrode. The gate electrode and source and drain regions constitute a first field effect transistor. A first stressor internally containing compressive strain or tensile strain is formed over the first film on both sides of the gate electrode of the first field effect transistor. The first stressor forms strain in a channel region. | 12-11-2008 |
| 20100163928 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source electrode, a drain electrode and a gate electrode formed over the n-GaN layer (compound semiconductor layer) are provided. A recess portion is formed inside an area between the source electrode and the drain electrode of the n-GaN layer (compound semiconductor layer) and at a portion separating from the gate electrode. | 07-01-2010 |
| 20100320505 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND AMPLIFIER - A semiconductor device includes a nitride semiconductor layer having a (0001) face and a (000-1) face, formed above a common substrate; a (0001) face forming layer provided partially between the substrate and the nitride semiconductor layer; a source electrode, a drain electrode, and a gate electrode, provided on the nitride semiconductor layer having the (0001) face; and a hole extracting electrode provided on the nitride semiconductor layer having the (000-1) face. | 12-23-2010 |
| 20120043586 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a substrate, a carrier transit layer disposed above the substrate, a compound semiconductor layer disposed on the carrier transit layer, a source electrode disposed on the compound semiconductor layer, a first groove disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate, a drain electrode disposed in the inside of the first groove, a gate electrode located between the source electrode and the first groove and disposed on t he compound semiconductor layer, and a second groove located diagonally under the source electrode and between the source electrode and the first groove and disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate. | 02-23-2012 |
| Patent application number | Description | Published |
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| 20090059755 | Method for adjusting a focus position on an optical disc and an optical disc apparatus applying the same therein - In a method for adjusting a focus position for an optical disc, onto/from which in formation is recorded or reproduced, while adjusting the focus position of an optical reproducing means, upon a recording surface of an optical information recording medium having an area where information of the optical information recording medium is recorded in advance, comprising the following steps of: memorizing plural numbers of information relating to focus positions determined appropriately, which can be obtained from the area where the information of the optical information recording medium is recorded in advance; and adjusting the focus position for the optical disc loaded into an apparatus, from at lease one (1) signal relating to the focus position, which can be obtained from the optical disc, with utilizing a relationship between the plural numbers of information relating to the focus positions determined appropriately, memorized in advance, when reproduction of the information is impossible when the optical disc is loaded into the apparatus, thereby providing the focus position adjusting method and an optical disc apparatus applying the same therein, for enabling an appropriate focus adjustment even in case when DMA area cannot read out due to damages or defects therein. | 03-05-2009 |
| 20090161506 | Optical Disc Apparatus and Method for Controlling Overwrite Power - An optical disc apparatus capable of improving an overwrite performance for performing an overwrite operation on a re-writable type optical disc. The apparatus includes a calculating section which calculates out a recording power at the time of previously performing recording in a recording area of the optical disc, and a recording power determining section which determines a write power of the recording power calculated out by the calculating section as a write power of the currently recorded recording power, and at the same time, adjusts erase power, cooling power, and/or middle power of the recording power calculated out by the calculating section to finally determine the currently recorded recording power. | 06-25-2009 |
| 20090303845 | OPTICAL DISC APPARATUS AND REPRODUCTION CONTROL METHOD - The present invention makes it possible to reproduce reproduction images without a break without having to use any additional identification information even when real-time recorded data is not completely continuous. A control circuit references a data identification flag (“Recording Type”) which is attached to each sector of reproduction data to indicate the type of recorded data, and counts the number of sectors to which the data identification flag representing real-time recorded data is attached. When the count is not smaller than a threshold value, the control circuit reproduces all the sectors of the target reproduction block in a real-time reproduction mode. In the real-time reproduction mode, the control circuit masks a portion of reproduction data that is found to be defective, changes the value of the defective data to 0 (zero), and transfers the resulting reproduction data to a host device. | 12-10-2009 |
| 20100034066 | METHOD FOR ADJUSTING RECORDING POWER AND OPTICAL DISK APPARATUS - A method for adjusting recording power of an optical disk apparatus having an output circuit that outputs recording light onto a test writing area of an optical disk, and a control circuit that adjusts the recording power of the recording light outputted from the output circuit, the method including the steps of causing the control circuit to erase a recording mark recorded onto the test writing area, to record a recording mark onto the test writing area in constant recording power lower than threshold power for starting a recording operation, and to record a recording mark onto the test writing area while changing the recording power. | 02-11-2010 |
| 20100278024 | OPTICAL DISC DRIVE AND HIBERNATION RECOVERY METHOD FOR AN OPTICAL DISC DRIVE - Provided is a technology in which a controller for controlling read/write performed to/from an optical disc includes a processor for controlling an interface, a temporary memory unit, a rotation control unit, and an optical control unit. The controller causes the processor to shift to a hibernate state when a predetermined condition is satisfied, and causes the processor to recover from the hibernate state into an active state when the interface receives a first command. The processor receives the first command from the interface, instructs the rotation control unit to drive the optical disc at a predetermined target rotational speed, instructs the optical control unit to perform a processing specified by the first command, transmits a completion notification of the first command to the interface with a delay, receives a second command after transmitting the completion notification of the first command, and executes the processing of the second command. | 11-04-2010 |
