| Patent application number | Description | Published |
|---|
| 20080245297 | Material supply apparatus - A container of a material supply apparatus is configured of a crucible and an orifice. The crucible has a cylindrical shape, a rectangular-column shape or the like, and is hollow. Heat sources such as heaters are disposed around the crucible. The orifice including an opening is provided on a side of the crucible in a material element supplying direction. The orifice includes a pipe portion that extends in the material element supplying direction. The opening is formed on a tip of the pipe portion. An opening area of the pipe portion is formed to become gradually narrower towards the material element supplying side, namely in a direction of the opening. | 10-09-2008 |
| 20090146541 | INFRARED REFLECTOR AND HEATING DEVICE HAVING THE SAME - Provided is an infrared reflector having the configuration in which a dielectric film, an Au (gold) film, and an oxide film are sequentially formed on a substrate. The infrared reflector with this configuration is used so that the oxide film would face a body to be heated. In addition, infrared light emitted from a heat source can be reflected and collected by a reflection metal of the Au film to the body to be heated. Moreover, since the dielectric film is formed on the substrate, it is possible to prevent Au from dispersing under high temperature and thus to prevent deterioration of the infrared reflector. | 06-11-2009 |
| 20090200545 | ZnO-Based Semiconductor Device - Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layers | 08-13-2009 |
| 20100040534 | RADICAL GENERATING APPARATUS AND ZNO-BASED THIN FILM - Provided are: a radical generating apparatus that increases a purity of emitted plasma atoms, prevents contamination with impurities, and is improved in controllability over ion concentration; and a ZnO-based thin film prevented from being contaminated with impurities. A high-frequency coil ( | 02-18-2010 |
| 20100090214 | OXIDE THIN FILM AND OXIDE THIN FILM DEVICE - Provided are an oxide thin film doped with an n-type impurity, and an oxide thin film device. In an oxide thin film ( | 04-15-2010 |
| 20100133470 | ZnO-BASED SUBSTRATE AND METHOD OF TREATING ZnO-BASED SUBSTRATE - Provided are a ZnO-based substrate having a surface suitable for crystal growth, and a method of manufacturing the ZnO-based substrate. The ZnO-based substrate is made in a way that almost no hydroxide groups exist on a crystal growth-side surface of a Mg | 06-03-2010 |
| 20100183045 | SUBSTRATE TEMPERATURE MEASURING APPARATUS AND SUBSTRATE TEMPERATURE MEASURING METHOD - A substrate temperature measuring apparatus includes: a heating source that heat a substrate; a transmission window that transmits therethrough an infrared ray in a range of a wavelength at which the infrared ray cannot transmit through the substrate; and a temperature-measuring instrument having a sensitivity range including the range of the wavelength, and measuring a substrate temperature of the substrate by analyzing an infrared ray radiated from the substrate heated by the heating source and having transmitted through the transmission window. | 07-22-2010 |
| 20100230671 | ZNO-BASED SEMICONDUCTOR AND ZNO-BASED SEMICONDUCTOR DEVICE - Provided are a ZnO-based semiconductor capable of alleviating the self-compensation effect and of achieving easier conversion into p-type, and a ZnO-based semiconductor device. The ZnO-based semiconductor includes a nitrogen-doped Mg | 09-16-2010 |
| 20100237343 | ZnO-BASED THIN FILM AND SEMICONDUCTOR DEVICE - Provided are a ZnO-based thin film which is inhibited from being doped with an unintentional impurity, and a semiconductor device. The ZnO-based thin film has a main surface: which is formed of Mg | 09-23-2010 |
| 20100270533 | ZnO-BASED SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device capable of achieving easier conversion into p-type by alleviating the self-compensation effect and by preventing donor impurities from mixing in. The ZnO-based semiconductor device includes a Mg | 10-28-2010 |
| 20100289004 | ZNO-BASED THIN FILM AND ZNO-BASED SEMICONDUCTOR ELEMENT - Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer | 11-18-2010 |
| 20100308327 | ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE - Provided are a ZnO-based substrate having a high-quality surface suitable for crystal growth, a method for processing the ZnO-based substrate, and a ZnO-based semiconductor device. The ZnO-based substrate is formed such that any one of a carboxyl group and a carbonate group is substantially absent in a principal surface on a crystal growth side. Also, in order for a carboxyl group or a carbonate group to be substantially absent, any one of oxygen radicals, oxygen plasma and ozone is brought into contact with the surface of the ZnO-based substrate before the crystal growth is started. Consequently, cleanness of the surface of the ZnO substrate is enhanced, thereby enabling fabrication of a high-quality ZnO-based thin film on the substrate. | 12-09-2010 |
| 20110033718 | ZnO THIN FILM - Provided is a ZnO-based thin film which is doped with p-type impurities and which can be used for various devices. An Mg | 02-10-2011 |
| 20110037067 | ZNO-GROUP SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device in which flat ZnO-based semiconductor layers can be grown on a MgZnO substrate having a laminate-side principal surface including a C-plane. With an Mg | 02-17-2011 |
| 20110114937 | p-TYPE MgZnO-BASED THIN FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are: a p-type MgZnO-based thin film that functions as a p-type; and a semiconductor light emitting device that includes the p-type MgZnO-based thin film. | 05-19-2011 |
| 20110114938 | ZnO SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device in which, in the case of forming a laminate including an acceptor-doped layer made of a ZnO-based semiconductor, the properties of a film can be stabilized by preventing deterioration of the flatness of the acceptor-doped layer or a layer after the acceptor-doped layer and an increase of crystal defect in the layer, without lowering the concentration of an acceptor element. | 05-19-2011 |
