| Patent application number | Description | Published |
|---|
| 20080299760 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A highly reliable method for forming contact plugs is provided. The method can prevent short circuiting from occurring between self aligned contact plugs and word lines or between self aligned contact plugs and bit lines by applying a material, whose etching speed ratio relative to that of the silicon-based insulating film is | 12-04-2008 |
| 20080305627 | METHOD OF FORMING A CONTACT PLUG AND METHOD OF FORMING A SEMICONDUCTOR DEVICE - A method of forming a contact plug includes the following processes. A dummy film is formed over a substrate. The dummy film may include amorphous carbon as a main material. At least one contact hole is formed in the dummy film. At least one contact plug is formed in the at least one contact hole. | 12-11-2008 |
| 20090061589 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING CYLINDER-TYPE CAPACITOR STRUCTURE - A method of manufacturing a semiconductor device includes forming an inter-layer insulating film; arranging a plurality of grooves in a surface layer of the inter-layer insulating film; forming embedded insulating films which are embedded in the grooves; arranging a plurality of holes in the inter-layer insulating film and between the embedded insulating films, in a manner such that each hole between the embedded insulating films partially overlaps therewith; forming lower electrodes, each of which has a bottom and a side face, and covers the bottom and side faces of the corresponding hole; forming a capacitance insulating film which covers the lower electrodes; and forming an upper electrode which further covers the capacitance insulating film. | 03-05-2009 |
| 20100044757 | SEMICONDUCTOR DEVICE HAVING A CONTACT PLUG AND MANUFACTURING METHOD THEREOF - There is provided a semiconductor device that includes: a transistor having a gate electrode, a source region, arid a drain region; a first inter-layer insulation film covering the transistor; a first contact plug formed penetrating through the first inter-layer insulation film and connected to either the source region or the drain region; a second inter-layer insulation film covering the first contact plug; a groove extending in the second inter-layer insulation film in a same direction as an extending direction of the gate electrode and exposing a top surface of the first contact plug at a bottom thereof; a second contact plug connected to the first contact plug and formed in the groove; and a wiring pattern extending on the second inter-layer insulation film so as to traverse the groove and integrated with the second contact plug. | 02-25-2010 |
| 20100221670 | PATTERN FORMATION METHOD - A method for forming a finer hole or line pattern including the step of sequentially depositing a first mask layer ( | 09-02-2010 |
| 20110045650 | Method of manufacturing semiconductor device - A method of manufacturing a semiconductor device may include, but is not limited to the following processes. First and second electrodes are formed in a first insulating film over a semiconductor substrate. The first and second electrodes upwardly extend from the semiconductor substrate. The first and second electrodes have first and second upper portions protruding from an upper surface of the first insulating film, respectively. A support film, which covers the upper surface of the first insulating film and the first and second upper portions, is formed. The support film is patterned so that a remaining portion of the support film connects the first and second upper portions. The first insulating film is removed while the remaining portion mechanically supports the first and second electrodes. | 02-24-2011 |
| 20120061969 | WIND TURBINE GENERATOR AND TIDAL CURRENT GENERATOR - An object of the present invention is to provide a wind turbine generator and a tidal current generator equipped with a hydraulic transmission with a combination of a hydraulic pump and a hydraulic motor and which has a superior productivity and maintainability. The wind turbine generator | 03-15-2012 |
| 20120129339 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A CONTACT PLUG - There is provided a semiconductor device that includes: a transistor having a gate electrode, a source region, and a drain region; a first inter-layer insulation film covering the transistor; a first contact plug formed penetrating through the first inter-layer insulation film and connected to either the source region or the drain region; a second inter-layer insulation film covering the first contact plug; a groove extending in the second inter-layer insulation film in a same direction as an extending direction of the gate electrode and exposing a top surface of the first contact plug at a bottom thereof; a second contact plug connected to the first contact plug and formed in the groove; and a wiring pattern extending on the second inter-layer insulation film so as to traverse the groove and integrated with the second contact plug. | 05-24-2012 |
