Patent application number | Description | Published |
20090072300 | Semiconductor device having trench gate structure - The present invention provides a vertical MOSFET which has striped trench gate structure which can secure avalanche resistance without increasing Ron. A vertical MOSFET | 03-19-2009 |
20100123191 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region. | 05-20-2010 |
20100171172 | Semiconductor device and method for manufacturing the same - A semiconductor device, includes a semiconductor layer of a second conductive type, a first diffused region of a first conductive type formed in the semiconductor layer, a second diffused region of the second conductive type selectively formed in the first diffused region, a trench formed in the semiconductor layer, a polysilicon formed in the trench with an insulator intervening, a first oxide film formed on the polysilicon so that the first oxide film is buried in the trench, a second oxide film formed on the first oxide film so that the second oxide film is buried in the trench, and a flowable insulator film formed on the second oxide film so that the flowable insulator film is buried in the trench. | 07-08-2010 |
20100258863 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to the present invention having a vertical MOSFET that includes a first trench that is formed in a semiconductor substrate and includes a gate electrode of the vertical MOSFET embedded therein with a gate insulating film interposed therebetween, a second trench that is connected with the first trench and has a trench width wider than the first trench, a gate pad that is connected with the gate electrode and formed to a sidewall of the second trench with the gate insulating film interposed therebetween, and a gate line that is connected with a sidewall of the gate pad and electrically connects with the gate electrode via the gate pad. | 10-14-2010 |
20100267211 | Method of manufacturing semiconductor apparatus - A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance. | 10-21-2010 |
20110019356 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an object having a relative dielectric constant of 5.8 is arranged solid between the parallel flat plates of the first capacitor. | 01-27-2011 |
20110273834 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an integrally formed object having a relative dielectric constant of 5.8 is arranged between the first capacitor to cover a first radiating region containing the controller and the first nonvolatile semiconductor memories. | 11-10-2011 |
20120043604 | Semiconductor device and method for manufacturing the same - A semiconductor device includes a semiconductor layer, a first diffused region formed in the semiconductor layer, a second diffused region formed in the first diffused region, a trench formed in the semiconductor layer, a gate electrode disposed in the trench, a top surface of the gate electrode being lower than a top surface of the semiconductor layer and sagging downwards in a center thereof, a non-doped silicate glass film disposed in the trench and formed over the gate electrode, a top surface of the silicate glass film sagging downwards in a center thereof, an oxide film disposed in the trench and formed over the non-doped silicate glass film, a top surface of the oxide film sagging downwards in a center, and a source electrode formed over the semiconductor layer so that the source electrode contacts the first and second diffusion regions, and the oxide film at the top surface thereof. | 02-23-2012 |
20120126316 | SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region. | 05-24-2012 |
20130142540 | CLEANING DEVICE AND IMAGE FORMING APPARATUS INCLUDING THE SAME - A cleaning device includes first to third cleaning members that clean a surface of an endless belt that is looped over rollers including a driving roller. The first cleaning member is brought into contact with and separated from the surface at a predetermined timing. The second cleaning member is disposed upstream of the first cleaning member and downstream of the driving roller in a movement direction of the endless belt. The second cleaning member is in contact with the endless belt so as to prevent a tension variation of the endless belt caused by the first cleaning member from affecting the driving roller. The third cleaning member is disposed downstream of the first cleaning member. A contact state in which the third cleaning member is in contact with the endless belt is switched from a first contact state to a second contact state so as to reduce the tension variation. | 06-06-2013 |
20130182296 | IMAGE READING DEVICE, IMAGE READING METHOD, AND IMAGE FORMING APPARATUS - An image reading device includes a transporter transporting a document to a reading position, a first corrector correcting a skew of the document by coming into contact with a leading edge thereof, a radiating unit radiating light to the document, an image-information acquiring unit acquiring image information of the document based on information of light reflected therefrom, a reflector reflecting the radiated light, a leading-edge detector comparing a quantity of light reflected by the reflector with a quantity of light reflected by the document so as to detect the leading edge, a skew-amount calculator calculating a skew amount of the leading edge, and a second corrector correcting a skew of the image information based on the skew amount. The device switches between the skew correction by the first corrector and the skew correction by the second corrector based on document information, the skew amount, or user's selection. | 07-18-2013 |
20140075100 | MEMORY SYSTEM, COMPUTER SYSTEM, AND MEMORY MANAGEMENT METHOD - A memory system includes a non-volatile memory having a physical memory region and a controller for conducting data transmission between the non-volatile memory and a host. The controller includes a section management module and a wear leveling module. The section management module divides the physical memory region into multiple sections including a first section and one or more of second sections. The wear leveling module performs independent wear leveling for each of the second sections without performing wear leveling for the first section. The section management module performs expansion of the first section according to a physical memory region expansion request from the host. | 03-13-2014 |
20140307382 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an integrally formed object having a relative dielectric constant of 5.8 is arranged between the first capacitor to cover a first radiating region containing the controller and the first nonvolatile semiconductor memories. | 10-16-2014 |
20150069470 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device includes a plurality of basic cells that each have a first transistor pair including two p-channel transistors of a first-type and a second transistor pair including two p-channel transistors of a second-type. The second-type transistors are configured to consume less power and operate more slowly than the first-type transistors. The basic cell further includes a third transistor pair of two n-channel transistors of a third-type. The third transistor pair is disposed between the first and second transistor pairs. Gate electrodes are separately provided for each transistor in the first, second, and third transistor pairs. The basic cell thus formed can be used to fabricate various circuit elements by making wiring connections between various transistor pairs and/or basic cells. | 03-12-2015 |