Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Atsushi Kaneko
Atsushi Kaneko, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090072300 | Semiconductor device having trench gate structure - The present invention provides a vertical MOSFET which has striped trench gate structure which can secure avalanche resistance without increasing Ron. A vertical MOSFET | 03-19-2009 |
| 20100123191 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region. | 05-20-2010 |
| 20100171172 | Semiconductor device and method for manufacturing the same - A semiconductor device, includes a semiconductor layer of a second conductive type, a first diffused region of a first conductive type formed in the semiconductor layer, a second diffused region of the second conductive type selectively formed in the first diffused region, a trench formed in the semiconductor layer, a polysilicon formed in the trench with an insulator intervening, a first oxide film formed on the polysilicon so that the first oxide film is buried in the trench, a second oxide film formed on the first oxide film so that the second oxide film is buried in the trench, and a flowable insulator film formed on the second oxide film so that the flowable insulator film is buried in the trench. | 07-08-2010 |
| 20100258863 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to the present invention having a vertical MOSFET that includes a first trench that is formed in a semiconductor substrate and includes a gate electrode of the vertical MOSFET embedded therein with a gate insulating film interposed therebetween, a second trench that is connected with the first trench and has a trench width wider than the first trench, a gate pad that is connected with the gate electrode and formed to a sidewall of the second trench with the gate insulating film interposed therebetween, and a gate line that is connected with a sidewall of the gate pad and electrically connects with the gate electrode via the gate pad. | 10-14-2010 |
| 20100267211 | Method of manufacturing semiconductor apparatus - A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance. | 10-21-2010 |
| 20110019356 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an object having a relative dielectric constant of 5.8 is arranged solid between the parallel flat plates of the first capacitor. | 01-27-2011 |
Atsushi Kaneko, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20100331270 | ADRENOMEDULLIN PRODUCTION ENHANCER - It is an object of the invention to discover a substance that effectively increases the production of adrenomedullin, as well as to provide an adrenomedullin production-enhancing agent utilizing this substance. The adrenomedullin production-enhancing agent is characterized by inclusion of a ginsenoside, a sanshool, and/or a shogaol as active ingredients. | 12-30-2010 |
Atsushi Kaneko, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100099573 | RARE EARTH-TYPE TAPE-SHAPED OXIDE SUPERCONDUCTOR AND A COMPOSITE SUBSTRATE USED FOR THE SAME - This invention provides a rare earth-type tape-shaped oxide superconductor having excellent mechanical strength and superconducting properties and a composite substrate using for the same. Non-oriented and non-magnetic Ni-9 at % W alloy tapes ( | 04-22-2010 |
| 20100197506 | TAPE-SHAPED OXIDE SUPERCONDUCTOR - This invention provides a tape-shaped oxide superconductor which can prevent the diffusion of elements constituting a metallic substrate into a superconducting layer and cracking of an intermediate layer and improve the orientation of the superconducting layer. A 15 to 100 nm-thick Ce—Gd—O-based oxide layer ( | 08-05-2010 |
| 20100270749 | MECHANICAL SEAL DEVICE AND TANDEM SEAL DEVICE - The present invention provides a mechanical seal device for obtaining appropriate sliding properties under any conditions, such as a pressure of seal is low or high. In the present invention, both first grooves | 10-28-2010 |
Atsushi Kaneko, Kyoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20100253986 | DIGITAL HOLOGRAPHY DEVICE AND PHASE PLATE ARRAY - Provided is a digital holography device having a simple configuration and an improved image quality, including: a light source that emits light, the light source being provided for supply of object light beams formed by radiation, transmission, scattering, reflection, or diffraction of the emitted light from a subject; an array device that splits the light emitted from the light source into two kinds of reference light beams having different phases in a plane perpendicular to a direction in which the light emitted from the light source travels; a CCD camera having an image-capturing plane on which two kinds of interference fringe patterns are recorded, the interference fringe patterns being formed by interferences between the two kinds of reference light beams, which have been produced by the array device, and the object light beams, which have been formed by radiation, transmission, scattering, reflection, or diffraction from the subject; and an image reconstruction device that generates a reconstructed image of the subject from the two kinds of interference fringe patterns recorded on the image-capturing plane. | 10-07-2010 |
Atsushi Kaneko, Saitama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100090919 | ANTENNA - A plate-shaped radiating element of a shape having at least three planes is formed by bending a metal plate having a substantially rectangular shape. A first slit is provided from a lower edge of the plate-shaped radiating element up to a portion in the vicinity of an upper edge of the plate-shaped radiating element while passing through a center point of the plate-shaped radiating element, and forms plate-shaped dipole elements on both sides thereof. A second slit is provided parallel to the upper edge of the plate-shaped radiating element and forms a folded element on an upper side thereof. Feeding points are provided on both sides of the first slit at the lower edge of the plate-shaped radiating element. | 04-15-2010 |
Atsushi Kaneko, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090057723 | SEMICONDUCTOR DEVICE - A semiconductor device including a plurality of semiconductor elements, a substrate on which the plurality of semiconductor elements are mounted, the substrate also having a plurality of terminals for connecting to external equipment, a fuse mounted on the outside of a mounting area of the plurality of semiconductor elements and mounted on a surface of the substrate near a power supply terminal among the plurality of terminals, and the power supply terminal and the plurality of semiconductor elements are connected via the fuse. | 03-05-2009 |
| 20100007014 | SEMICONDUCTOR DEVICE - According to an aspect of the invention, a semiconductor device includes: a semiconductor substrate; a memory chip disposed on the semiconductor substrate, the memory chip including: a first face that is not opposed to the semiconductor substrate; and a plurality of first pads disposed on the first face so that the first pads are aligned along a virtual line passing at a central portion on the first face; a controller chip disposed on the first face not to cover the first pads, the controller chip including: a second face that is not opposed to the first face; and a plurality of second pads disposed on the second face so that the second pads are aligned along at least one side of the second face; and a plurality of metal wires electrically connecting the first pads and the second pads. | 01-14-2010 |
Atsushi Kaneko, Saitama JP
| Patent application number | Description | Published |
|---|---|---|
| 20090121957 | ANTENNA - A plate-shaped radiating element of a shape having at least three planes is formed by bending a metal plate having a substantially rectangular shape. A first slit is provided from a lower edge of the plate-shaped radiating element up to a portion in the vicinity of an upper edge of the plate-shaped radiating element while passing through a center point of the plate-shaped radiating element, and forms plate-shaped dipole elements on both sides thereof. A second slit is provided parallel to the upper edge of the plate-shaped radiating element and forms a folded element on an upper side thereof. Feeding points are provided on both sides of the first slit at the lower edge of the plate-shaped radiating element. | 05-14-2009 |
Atsushi Kaneko, Kawasaki JP
| Patent application number | Description | Published |
|---|---|---|
| 20110128715 | SHIELD CASE AND COMMUNICATION DEVICE - A shield case includes a first shield member and a second shield member coupled to the first shield member to form the shield case. a concave portion is capable of accommodating a sealing member for sealing inner space of the shield case by contacting the first shield member and the second shield member, and is formed on the second shield member. On each of the first shield member and the second shield member, a paint film portion is formed on an area of the shield case external to the concave portion. On the first shield member or the second shield member or combination thereof, a convex portion is formed on the area of the shield case on the inner space side and internal to the concave portion. The surfaces of the first shield member and the second shield member contact each other at the convex portion. | 06-02-2011 |