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| 20080226664 | Colon cancer antigen panel - The invention provides methods, compositions and kits for inducing and/or enhancing an immune response in a subject. The invention in some aspects includes polypeptide and nucleic acid molecules that induce and/or enhance an immune response. In some aspects of the invention, the polypeptide and/or nucleic acid molecules of the invention are useful to induce and/or enhance an immune response in a subject who has or is suspected of having cancer. | 09-18-2008 |
| 20110097343 | DIAGNOSIS AND THERAPY OF HEMATOLOGICAL MALIGNANCIES - The present invention relates to the field of diagnosis and therapy of hematological malignancies based on the tumor antigen FMR1NB (also called NY-SAR-35, Cancer/testis antigen 37 or Fragile X mental retardation 1 neighbor protein) and agents specifically targeting this antigen or cells expressing the same, e.g., antibodies. The inventors were able to prove that the molecule is expressed on the cell surface and thus represents a particularly advantageous target in cancer therapy and vaccination. Surprisingly, FMR1NB was found to be associated with hematological malignancies, e.g. acute myeloid leukemia (AML) or chronic myeloid leukemia (CML). | 04-28-2011 |
| 20110217259 | IL-16 as a target for diagnosis and therapy of hematological malignancies and solid tumors - The present invention relates to the field of diagnosis and therapy of hematological malignancies, such as multiple myeloma, as well as solid tumors based on cytokine interleukin-16 (IL-16) and agents specifically targeting this antigen or cells expressing the same, e.g., antibodies. The inventors were able to prove that IL-16 is expressed and secreted at high levels by myeloma cells. Most importantly, the inventors have demonstrated for the first time that IL-16 supports the proliferation of the malignant cells. Therefore, this cytokine represents a particularly advantageous target in cancer therapy and diagnosis. | 09-08-2011 |
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| 20080217695 | Heterogeneous Semiconductor Substrate - A substrate comprising a first region of a first semiconductor and a second region of second semiconductor, wherein the first semiconductor and the second semiconductor are different, is disclosed. The substrate is particularly supportive of p-channel MOSFETs and n-channel MOSFETs having carrier mobility that is closer than in substrates comprising a single semiconductor. | 09-11-2008 |
| 20080286949 | Method of Forming a Rare-Earth Dielectric Layer - Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits. | 11-20-2008 |
| 20110037048 | Composition Comprising Rare-earth Dielectric - Compositions comprising a single-phase rare-earth dielectric disposed on a substrate. Embodiments of the present invention provide the basis for high-K gate dielectrics in conventional integrated circuits and high-K buried dielectrics as part of a semiconductor-on-insulator wafer structure. | 02-17-2011 |
| 20120012166 | Thin Film Semiconductor-on-Glass Solar Cell Devices - The present invention relates to semiconductor devices suitable for electronic, optoelectronic and energy conversion applications. In a particular form, the present invention relates to the fabrication of a thin film solar cells and thin film transistors through the advantageous combination of semiconductors, insulators, rare-earth based compounds and amorphous and/or ceramic and/or glass substrates. Example embodiments of crystalline or polycrystalline thin film semiconductor-on-glass formation using rare-earth based material as impurity barrier layer(s) are disclosed. In particular, thin film silicon-on-glass substrate is disclosed as the alternate embodiment, with impurity barrier designed to inhibit transport of deleterious alkali species from the glass into the semiconductor thin film. | 01-19-2012 |
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| 20080308143 | Thin Film Semi-Conductor-on-Glass Solar Cell Devices - The present invention relates to semiconductor devices suitable for electronic, optoelectronic and energy conversion applications. In a particular form, the present invention relates to the fabrication of a thin film solar cells and thin film transistors through the advantageous combination of semiconductors, insulators, rare-earth based compounds and amorphous and/or ceramic and/or glass substrates. Crystalline or polycrystalline thin film semiconductor-on-glass formation using alkali ion impurity barrier layer(s) are disclosed. Example embodiment of crystalline or polycrystalline thin film semiconductor-on-glass formation using rare-earth based material as impurity barrier layer(s) is disclosed. In particular, thin film silicon-on-glass substrate is disclosed as the alternate embodiment, with impurity barrier designed to inhibit transport of deleterious alkali species from the glass into the semiconductor thin film. | 12-18-2008 |
| 20100140755 | Rare-earth oxides, rare-earth nitrides, rare-earth phosphides and ternary alloys - Fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides is disclosed. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors. The presented growth techniques and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices. | 06-10-2010 |
