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Asko
Asko Karppi, Turku FI
| Patent application number | Description | Published |
|---|---|---|
| 20100282425 | Cationic polysaccharide, its preparation and use - The present invention relates to polysaccharide, preferably starch, of high purity having cationic degree of substitution over 0.50 and bound nitrogen index after cationisation reaction stage over 0.75, and to preparation thereof as well as to its use in making of paper or paperboard. | 11-11-2010 |
Asko Rantee, Nokia FI
| Patent application number | Description | Published |
|---|---|---|
| 20090194262 | METHOD FOR PREVENTING CORROSION ON THE HEAT EXCHANGE SURFACES OF A BOILER, AND A SUPPLY MEANS FOR ADDITIONAL MATERIAL - A supply and a method for preventing corrosion on heat exchange surfaces of a boiler. Additional material is fed to flue gases of a boiler by at least one supply for additional material. The supply includes a cooled case beam that is hollow inside and several nozzles for feeding the additional material. | 08-06-2009 |
| 20110259284 | BOILER EQUIPPED WITH A SUPERHEATER | 10-27-2011 |
Asko Seeba, Dublin IE
| Patent application number | Description | Published |
|---|---|---|
| 20120033797 | Communication System - A method of transmitting a communication event from a calling entity to a called entity located in a communication system comprising a first network and a second network, said method comprising determining a first identity associated with the calling entity and a first and second identity associated with the called entity, wherein the first identities are recognizable in the first network and the second identity is recognizable in the second network; associating at a first node located in the second network the first identities with the second identity; establishing a connection between the calling entity and a second node; wherein the connection with second node is established using the first identity associated with the called entity; querying the first node with the first identity associated with the called entity and the first identity associated with the calling entity to determine the second identity associated with the called entity; and transmitting the communication event to the called entity using the second identity associated with the called entity. | 02-09-2012 |
Asko Sneck, Kirkkonummi FI
| Patent application number | Description | Published |
|---|---|---|
| 20120132380 | METHOD OF MANUFACTURING PAPER AND PRODUCTS OBTAINED BY THE METHOD - The invention relates to a method for manufacturing nanostructured paper or board and a novel paper or board. The method comprises providing a liquid suspension of nanocellulose-containing material, forming a web from the suspension, and drying the web in order to form paper or board. According to the invention the water content of the suspension from which the web is formed is 50% or less by weight of liquids. By means of the invention, energy consumption of paper manufacturing can be significantly reduced. | 05-31-2012 |
| 20120132381 | NOVEL PAPER AND METHOD OF MANUFACTURING THEREOF - The invention relates to a method for manufacturing nanostructured paper or board and a novel paper or board. The method comprises providing a liquid suspension of nanocellulose-containing material, forming a web from the suspension and drying the web in order to form paper or board. According to the invention, the water content of the suspension at the time of beginning of the drying is 50% or less by weight of liquids so as to form a paper or board having an average pore size between 200 and 400 nm. By means of the invention, very opaque paper, for example for printing applications, can be manufactured with low energy consumption. | 05-31-2012 |
Asko Vehanen, Esbo FI
| Patent application number | Description | Published |
|---|---|---|
| 20090114924 | LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES - A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×10 | 05-07-2009 |
| 20120091471 | LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES - A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 10 | 04-19-2012 |