Patent application number | Description | Published |
20080214003 | METHODS FOR FORMING A RUTHENIUM-BASED FILM ON A SUBSTRATE - Methods for forming a film on a substrate in a semiconductor manufacturing process A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate. | 09-04-2008 |
20090020140 | NON-FLAMMABLE SOLVENTS FOR SEMICONDUCTOR APPLICATIONS - Methods and compositions for purging and cleaning a semiconductor fabrication system are disclosed herein. In general, the disclosed methods utilize solvents comprising hydrofluoroethers. Hydrofluoroethers are non-toxic and have low moisture content, preventing heat generation from organometallic precursor hydrolysis. In an embodiment, a method of cleaning a semiconductor fabrication system comprises dissolving at least one chemical precursor used in semiconductor fabrication in at least one delivery line with a solvent to clean the at least one delivery line. The solvent generally comprises a hydrofluoroether. The methods and compositions may be used in a variety of semiconductor film deposition processes. | 01-22-2009 |
20100116738 | Process Of Purifying Ruthenium Precursors - The present invention provides for two separate processes for removing impurities from an organic solvent based ruthenium precursor. The first process comprises the steps of contacting the organic solvent based ruthenium precursor with one or more drying agents under an inert gas blanket for a sufficient period of time to allow at least a portion of the impurities in the organic solvent based ruthenium precursor to be adsorbed by the one or more drying agents; and separating the one or more drying agents which have at least a portion of the impurities adsorbed thereon from the organic solvent based ruthenium precursor. The second process comprises the steps of providing a column that contains one or more drying agents and is equipped with a filtration unit; passing the organic solvent based ruthenium precursor through the column in order to allow at least a portion of the impurities in the solvent based ruthenium precursor to be adsorbed by the one or more drying agents, said passing of the solvent based ruthenium precursor taking place under a blanket of inert gas; and further passing the ruthenium precursor through the filtration unit in order ro remove any residual particles that may result from the passage of the ruthenium precursor through the column containing the one or more drying agents in order to obtain a purified ruthenium precursor. | 05-13-2010 |
20100189898 | MANUFACTURING OF ADDUCT FREE ALKALINE-EARTH METAL Cp COMPLEXES - Methods and compositions for the deposition of a metal containing film on a substrate. The film is deposited with a substantially adduct free precursor which is prepared by a process to remove the adduct from an adducted starting material. | 07-29-2010 |
20110171381 | SILICON PRECURSORS AND METHOD FOR LOW TEMPERATURE CVD OF SILICON-CONTAINING FILMS - Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: | 07-14-2011 |
20110171836 | METHODS FOR FORMING A RUTHENIUM-BASED FILM ON A SUBSTRATE - Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate. | 07-14-2011 |
20120231180 | PROCESS OF PURIFYING RUTHENIUM PRECURSORS - Disclosed are methods of purifying a ruthenium containing precursor by removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor. Also disclosed are methods of forming an improved ruthenium containing film using the purified ruthenium containing precursor. | 09-13-2012 |
20150325097 | SMART CANISTER - Disclosed are smart canisters for use in the materials industry. The smart canisters include sensors and communication devices that allow users to continuously monitor various physical and chemical properties of the product insider the canisters. For a variety of products that have limited stability and tend to decompose over time, variations in product properties can adversely impact the process in which the material is used. The smart canister can alert the user, in real time, when the product is starting to deviate from pre-set functional parameters. | 11-12-2015 |