Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Ashraf W. Lotfi, Bridgewater US

Ashraf W. Lotfi, Bridgewater, NJ US

Patent application numberDescriptionPublished
20080301929Method of Manufacturing a Power Module - A method of manufacturing a power module on a substrate. In one embodiment, the method includes providing power conversion circuitry including providing a magnetic device having a magnetic core and at least one switch on the substrate. The method also includes placing a shielding structure over the magnetic core to create a chamber thereabout. The method also includes depositing an encapsulant about the power conversion circuitry. The shielding structure limits the encapsulant entering the chamber thereby allowing the encapsulant to surround a portion of the magnetic core within the chamber.12-11-2008
20090065964Method of Manufacturing an Encapsulated Package for a Magnetic Device - A method of manufacturing an encapsulated package for a magnetic device on a substrate. In one embodiment, the method includes providing a magnetic core on the substrate and placing a shielding structure over the magnetic core to create a chamber thereabout. The method also includes depositing an encapsulant about a portion of the magnetic core within the chamber. The shielding structure limits the encapsulant entering the chamber.03-12-2009
20090066300Power Converter Employing a Micromagnetic Device - A power converter including a power train, a controller and a driver. In one embodiment, the power train includes a switch that conducts for a duty cycle and provides a regulated output characteristic for the power converter, and a micromagnetic device. The micromagnetic device includes a first conductive winding layer selectively formed above a first seed layer, and first and second magnetic core layers formed thereabove. The micromagnetic device also includes a second seed layer formed above the second magnetic core layer, and a second conductive winding layer formed above the second seed layer and in vias to the first conductive winding layer. The first and second conductive winding layers form a winding for the micromagnetic device. The controller provides a signal to control the duty cycle of the switch, and the driver provides a drive signal to the switch as a function of the signal from the controller.03-12-2009
20090066467Micromagnetic Device and Method of Forming the Same - A micromagnetic device including a substrate, and a magnetic core layer formed over the substrate from a magnetic alloy. The magnetic alloy includes iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy.03-12-2009
20090066468Power Converter Employing a Micromagnetic Device - A power converter including a power train, a controller and a driver. The power train includes a switch that conducts for a duty cycle and provides a regulated output characteristic for the power converter, and a micromagnetic device interposed between the switch and the output of the power converter. The micromagnetic device includes a substrate, and a magnetic core layer formed over the substrate from a magnetic alloy including iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy. The controller provides a signal to control the duty cycle of the switch. The driver provides a drive signal to the switch as a function of the signal from the controller.03-12-2009
20090068347Method of Forming a Micromagnetic Device - A method of forming a micromagnetic device including providing a substrate and forming a magnetic core layer over the substrate from a magnetic alloy. The magnetic alloy includes iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy.03-12-2009
20090068400Micromagnetic Device and Method of Forming the Same - A micromagnetic device includes a first insulating layer formed above a substrate, a first seed layer formed above the first insulating layer, a first conductive winding layer selectively formed above the first seed layer, and a second insulating layer formed above the first conductive winding layer. The micromagnetic device also includes a first magnetic core layer formed above the second insulating layer, a third insulating layer formed above the first magnetic core layer, and a second magnetic core layer formed above the third insulating layer. The micromagnetic device still further includes a fourth insulating layer formed above the second magnetic core layer, a second seed layer formed above the fourth insulating layer, and a second conductive winding layer formed above the second seed layer and in vias to the first conductive winding layer. The first and second conductive winding layers form a winding for the micromagnetic device.03-12-2009
20090068761Method of Forming a Micromagnetic Device - A method of forming a micromagnetic device on a substrate including forming a first insulating layer above the substrate, a first seed layer above the first insulating layer, a first conductive winding layer above the first seed layer, and a second insulating layer above the first conductive winding layer. The method also includes forming a first magnetic core layer above the second insulating layer, a third insulating layer above the first magnetic core layer, and a second magnetic core layer above the third insulating layer. The method still further includes forming a fourth insulating layer above the second magnetic core layer, a second seed layer above the fourth insulating layer, and a second conductive winding layer above the second seed layer and in vias to the first conductive winding layer. The first and second conductive winding layers form a winding for the micromagnetic device.03-12-2009
20090212751Controller for a Power Converter and Method of Operating The Same - A controller for use with a power converter including a switch configured to conduct to provide a regulated output characteristic at an output of the power converter, and method of operating the same. In one embodiment, the controller includes a linear control circuit, coupled to the output, configured to provide a first control signal for the switch as a function of the output characteristic. The controller also includes a nonlinear control circuit, coupled to the output, configured to provide a second control signal for the switch as a function of the output characteristic. The controller is configured to select one of the first and second control signals for the switch in response to a change in an operating condition of the power converter.08-27-2009
20090261791Power Converter with Power Switch Operable in Controlled Current Mode - A power converter and method of controlling a power switch therein to improve power conversion efficiency at low output current. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to alternately enable conduction of the first and the second power switches with a duty cycle in response to an output characteristic of the power converter. The controller is configured to control a level of current in the first power switch when the second power switch is substantially disabled to conduct.10-22-2009
20100044789Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.02-25-2010
20100052049Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.03-04-2010
20100052050Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.03-04-2010
20100052051Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.03-04-2010
20100052052Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.03-04-2010
20100084750MODULE HAVING A STACKED PASSIVE ELEMENT AND METHOD OF FORMING THE SAME - A module having a discrete passive element and a semiconductor device, and method of forming the same. In one embodiment, the module includes a patterned leadframe, a discrete passive element mounted on an upper surface of the leadframe, and a thermally conductive, electrically insulating material formed on an upper surface of the discrete passive element. The module also includes a semiconductor device bonded to an upper surface of the thermally conductive, electrically insulating material.04-08-2010
20100087036MODULE HAVING A STACKED PASSIVE ELEMENT AND METHOD OF FORMING THE SAME - A module having a discrete passive element and a semiconductor device, and method of forming the same. In one embodiment, the module includes a patterned leadframe, a discrete passive element mounted on an upper surface of the leadframe, and a thermally conductive, electrically insulating material formed on an upper surface of the discrete passive element. The module also includes a semiconductor device bonded to an upper surface of the thermally conductive, electrically insulating material.04-08-2010
20100141228Power Converter with Power Switch Operable in Controlled Current Mode - A power converter and method of controlling a power switch therein to improve power conversion efficiency at low output current. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to alternately enable conduction of the first and the second power switches with a duty cycle in response to an output characteristic of the power converter. The controller is configured to control a level of current in the first power switch when the second power switch is substantially disabled to conduct.06-10-2010
20100156374Power Converter with Power Switch Operable in Controlled Current Mode - A power converter and method of controlling a power switch therein to improve power conversion efficiency at low output current. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to alternately enable conduction of the first and the second power switches with a duty cycle in response to an output characteristic of the power converter. The controller is configured to control a level of current in the first power switch when the second power switch is substantially disabled to conduct.06-24-2010
20100176905Magnetic Device Having a Conductive Clip - A magnetic device that includes a magnetic core having a surface facing a conductive substrate. The magnetic device also includes a conductive clip facing a surface of the magnetic core with ends of the conductive clip electrically coupled to the conductive substrate to cooperatively form a winding therewith about the magnetic core.07-15-2010
20100212150Module Having a Stacked Magnetic Device and Semiconductor Device and Method of Forming the Same - A module having a stacked magnetic device and semiconductor device, and method of forming the same. In one embodiment, the module includes a printed wiring board including a patterned conductor formed on an upper surface thereof. The module also includes a magnetic core mounted on the upper surface of the printed wiring board proximate the patterned conductor and a semiconductor device mounted on an upper surface of the magnetic core.08-26-2010
20100214746Module Having a Stacked Magnetic Device and Semiconductor Device and Method of Forming the Same - A module having a stacked magnetic device and semiconductor device, and method of forming the same. In one embodiment, the module includes a printed wiring board including a patterned conductor formed on an upper surface thereof. The module also includes a magnetic core mounted on the upper surface of the printed wiring board proximate the patterned conductor and a semiconductor device mounted on an upper surface of the magnetic core.08-26-2010
20110049621Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same - An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.03-03-2011
20110095742Power Converter with Controller Operable in Selected Modes of Operation - A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.04-28-2011
20110101934Power Converter with Controller Operable in Selected Modes of Operation - A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.05-05-2011
20110101948Power Converter with Controller Operable in Selected Modes of Operation - A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.05-05-2011
20110101949Power Converter with Controller Operable in Selected Modes of Operation - A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.05-05-2011

Patent applications by Ashraf W. Lotfi, Bridgewater, NJ US