Patent application number | Description | Published |
20090190320 | SEMICONDUCTOR DEVICE - Coupling reliability of a passive component is improved to increase the reliability of a semiconductor device. A first through hole is formed in a first electrode part of a first plate-like lead, and a second through hole is formed in a second electrode part of a second plate-like lead. As a result, at the first electrode part of the first plate-like lead, one external terminal of the passive component can be coupled to the first electrode parts on both sides of the first through hole while being laid across the first through hole. Also, at the second electrode part of the second plate-like lead, the other external terminal of the passive component can be coupled to the second electrode parts on both sides of the second through hole while being laid across the second through hole. Accordingly, at central portions both in the longitudinal and width directions of the passive component, the passive component is surrounded by sealing members. As a result, thermal stress applied to jointing materials such as solder can be reduced, improving the reliability of the semiconductor device (semiconductor package). | 07-30-2009 |
20100127683 | SEMICONDUCTOR DEVICE INCLUDING A DC-DC CONVERTER - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 05-27-2010 |
20110156274 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device capable of suppressing degradation in connection reliability due to the decrease in thickness of a conductive adhesive caused by the movement of a connecting plate in a semiconductor device to which a power transistor is mounted. A step is provided in the thin part of the connecting plate connected to a lead post to lock the connecting plate by contacting the step to the tip of the lead post. Alternatively, a groove is provided in the thin part of the connecting plate to lock the connecting plate by connecting the lead post to only the part of the connecting plate on the tip side from the groove. | 06-30-2011 |
20110169102 | SEMICONDUCTOR DEVICE INCLUDING A DC-DC CONVERTER HAVING A METAL PLATE - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 07-14-2011 |
20120273892 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 11-01-2012 |
20140027868 | MECHANICAL QUANTITY MEASURING DEVICE - In a mechanical quantity measuring device ( | 01-30-2014 |
20140042566 | MECHANICAL QUANTITY MEASURING DEVICE, SEMICONDUCTOR DEVICE, EXFOLIATION DETECTING DEVICE, AND MODULE - A mechanical quantity measuring device ( | 02-13-2014 |
20150020601 | Device for Measuring Mechanical Quantity - A device for measuring mechanical quantity is provided which reduces the influence of a difference in thermal expansion coefficient between an object to be measured and a base plate metal body, and precisely measures a mechanical quantity such as deformation quantity or strain quantity caused in the object to be measured. The device includes a semiconductor strain sensor module for measuring deformation quantity of the object to be measured, and the module includes a metal body, and a semiconductor strain sensor mounted on the metal body to detect strain of the metal body. The object to be measured is made of a material having a thermal expansion coefficient larger than that of the metal body. Further, the metal body mounted with the semiconductor strain sensor has a structure configured to be fixed to the object to be measured. | 01-22-2015 |
20150075290 | STRAIN SENSOR CHIP MOUNTING STRUCTURE, STRAIN SENSOR CHIP AND METHOD OF MANUFACTURING A STRAIN SENSOR CHIP MOUNTING STRUCTURE - Even when a strain sensor chip and an object to be measured are bonded to each other by using a metallic bonding material such as solder, the metallic bonding material shows the creep behavior when used under high temperature environment of, for example, 100° C. or higher, and therefore, the strain detected by the strain sensor chip is gradually reduced, and the strain is apparently reduced. In the strain sensor chip mounting structure which is one embodiment of the present application, a strain sensor chip is fixed onto a surface to be measured of the object to be measured via a metallic bonding material. And, the metallic bonding material is bonded to a metallic film that is formed on a side surface of the strain sensor chip. In this manner, temporal change in a measurement error can be suppressed. | 03-19-2015 |
20150276517 | Mechanical Quantity Measuring Device - A load cell including sensor chip ( | 10-01-2015 |
Patent application number | Description | Published |
20090294827 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device includes: a semiconductor substrate; a first impurity region; a second impurity region; a channel region; a first gate formed on a main surface on a side of the first impurity region; a second gate formed on the main surface on a side of the second impurity region, with a second insulating film being interposed; and a third insulating film formed on a side surface of the first gate. An interface between the third insulating film and the semiconductor substrate directly under the third insulating film is located above an interface between the second insulating film and the main surface of the semiconductor substrate directly under the second insulating film. The total number of steps can thus be reduced, and lower cost is achieved. | 12-03-2009 |
20100159687 | SEMICONDUCTOR DEVICE HAVING ELECTRODE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film. | 06-24-2010 |
20100246253 | MAGNETIC MEMORY DEVICE, AND MANUFACTURING METHOD THEREOF - To provide a magnetic memory device that can suppress the reduction of function of a magnetic memory element, and a manufacturing method thereof. A magnetic memory device includes a magnetic memory element capable of holding data based on a magnetized state thereof, and a digit line and a bit line which are capable of changing the magnetized state of the magnetic memory element by a magnetic field generated. The magnetic memory element is disposed above the digit line and the bit line at an intersection part of the digit line and the bit line. The digit line has a first width at the intersection part, and the bit line has a second width at the intersection part. The first width is larger than a third width of the magnetic memory element, and the second width is smaller than a fourth width of the magnetic memory element. | 09-30-2010 |
20110014783 | SEMICONDUCTOR DEVICE HAVING ELECTRODE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film. | 01-20-2011 |
20110175231 | Semiconductor Device Having Electrode and Manufacturing Method Thereof - A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film. | 07-21-2011 |
Patent application number | Description | Published |
20090141615 | OPTICAL RECORDING MEDIUM - According to one embodiment, an optical recording medium according to one embodiment of the invention is an optical recording medium to be processed using a light beam having a wavelength λ and a lens having a numerical aperture NA, which includes one of a track and a pit array, and in which a width TP of the track or pit satisfies a condition 0.480≦TP×NA/λ<1.026. | 06-04-2009 |
20100124160 | OPTICAL RECORDING SYSTEM TO RECORD INFORMATION WITH LIGHT - A multilayer optical recording system to record information with light includes a lens unit, a recording medium, and a microscopic drive unit. The lens unit includes a metamaterial lens or a plasmon lens. The metamaterial lens has a first dielectric member in which first microstructures are implanted in a substantially regular manner. The plasmon lens has an aperture. The aperture is a hole or a slit created in a metal film. The microscopic drive unit is configured to adjust a relative position between the lens unit and the recording medium. In addition, the principal plane is placed to be in contact with the lens unit or to have a gap between the principal plane and the lens unit. Furthermore, the second microstructures are arranged periodically in a direction substantially perpendicular to the principal plane of the recording medium. | 05-20-2010 |
20110068319 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a stacked body. The stacked body includes a first layer, a second layer and a recording layer provided between the first layer and the second layer. The recording layer includes a phase-change material and a crystal nucleus. The phase-change material is capable of reversely changing between a crystal state and an amorphous state by a current supplied via the first layer and the second layer. The crystal nucleus is provided in contact with the phase-change material and includes a crystal nucleus material having a crystal structure identical to a crystal structure of the crystal state of the phase-change material, and a crystal nucleus coating provided on a surface of the crystal nucleus material and having a composition different from a composition of the crystal nucleus material. | 03-24-2011 |
Patent application number | Description | Published |
20130266018 | COMMUNICATION SYSTEM AND COMMUNICATION METHOD - A communication system includes a first switch that refers to a first processing rule included in a packet and processes the packet in accordance with the first processing rule; a second switch that includes a table associating and storing an identifier and a second processing rule for a packet, refers to an identifier included in a packet, and processes the packet in accordance with a second processing rule associated with the identifier; and a control apparatus that stores the first processing rule and the identifier in a packet, associates and stores, in the table of the second switch, the identifier and the second processing rule. | 10-10-2013 |
20130308462 | COMMUNICATION SYSTEM, CONTROL APPARATUS, COMMUNICATION NODE, AND COMMUNICATION METHOD - A communication system includes: a plurality of communication nodes; and a control apparatus that controls packet processing of the plurality of communication nodes. The control apparatus further includes: a virtualization unit that configures a virtual node(s) from a plurality of communication nodes among the plurality of communication nodes; a control unit that sets a processing rule for a packet in at least one communication node of the plurality of communication nodes included in the virtual node(s), so that the at least one communication node executes packet processing corresponding to an operation of the virtual node(s); and a path calculation unit that calculates a forwarding path of a packet, based on a virtual network topology including the virtual node(s). The plurality of communication nodes process a packet corresponding to the forwarding path, in accordance with the processing rule. | 11-21-2013 |
20150055508 | SYSTEM AND METHOD FOR COMMUNICATION - A communications system includes: a first node device provided in a first network; a first controller controlling the first node device; a second node device provided in a second network and connected to the first node device; and a second controller controlling the second node device. The first controller sets the first node device with a processing rule according to which packets transferred between the first and second controllers are processed. The second controller sets the second node device with a processing rule according to which the packets are processed. The first and second controllers exchanges the packets each other through at least the first and second node devices. | 02-26-2015 |