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| 20110089499 | STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES - A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures. | 04-21-2011 |
| 20110163383 | BULK SUBSTRATE FET INTEGRATED ON CMOS SOI - An integrated circuit is provided that integrates an bulk FET and an SOI FET on the same chip, where the bulk FET includes a gate conductor over a gate oxide formed over a bulk substrate, where the gate dielectric of the bulk FET has the same thickness and is substantially coplanar with the buried insulating layer of the SOI FET. In a preferred embodiment, the bulk FET is formed from an SOI wafer by forming bulk contact trenches through the SOI layer and the buried insulating layer of the SOI wafer adjacent an active region of the SOI layer in a designated bulk device region. The active region of the SOI layer adjacent the bulk contact trenches forms the gate conductor of the bulk FET which overlies a portion of the underlying buried insulating layer, which forms the gate dielectric of the bulk FET. | 07-07-2011 |
| 20110169064 | READ TRANSISTOR FOR SINGLE POLY NON-VOLATILE MEMORY USING BODY CONTACTED SOI DEVICE - A read transistor for single poly non-volatile memory using a body contacted SOI transistor and a method of manufacturing the same is provided. The non-volatile random access memory is formed in silicon on insulator (SOI). The non-volatile random access memory includes a read field effect transistor (FET) having a body contact formed in the silicon of the SOI. The body contact is in electrical contact with a diffusion region under a gate of the read FET. | 07-14-2011 |
| 20110171792 | BACK-GATED FULLY DEPLETED SOI TRANSISTOR - A fully depleted semiconductor-on-insulator (FDSOI) transistor structure includes a back gate electrode having a limited thickness and aligned to a front gate electrode. The back gate electrode is formed in a first substrate by ion implantation of dopants through a first oxide cap layer. Global alignment markers are formed in the first substrate to enable alignment of the front gate electrode to the back gate electrode. The global alignment markers enable preparation of a virtually flat substrate on the first substrate so that the first substrate can be bonded to a second substrate in a reliable manner. | 07-14-2011 |
| 20110254059 | STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES - A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures. | 10-20-2011 |
| 20110284932 | BODY CONTACT STRUCTURES AND METHODS OF MANUFACTURING THE SAME - A body contact structure which reduce parasitic capacitance and improves body resistance of a device and methods of manufacture. The method includes forming a gate insulator material and gate electrode material on a substrate. The method further includes patterning the gate insulator material and the gate electrode material to form a gate structure having a shape with a first portion isolated from a second portion. The method further includes forming source and drain regions on sides of the first portion and a body contact at a side and under an area of the second portion, and forming an interlevel dielectric within a space that isolates the first portion from the second portion of the gate structure, and over the gate structure, source and drain regions and the body contact. | 11-24-2011 |
| 20120068174 | ELECTRICAL MASK INSPECTION - An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is used to determine if a potential defect exists within one of the vias or metal segments comprising the scan chain. | 03-22-2012 |
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| 20080258221 | SUBSTRATE SOLUTION FOR BACK GATE CONTROLLED SRAM WITH COEXISTING LOGIC DEVICES - A semiconductor structure that includes at least one logic device region and at least one static random access memory (SRAM) device region wherein each device region includes a double gated field effect transistor (FET) wherein the back gate of each of the FET devices is doped to a specific level so as to improve the performance of the FET devices within the different device regions is provided. In particular, the back gate within the SRAM device region is more heavily doped than the back gate within the logic device region. In order to control short channel effects, the FET device within the logic device region includes a doped channel, while the FET device within the SRAM device region does not. A none uniform lateral doping profile with a low net doping beneath the source/drain regions and a high net doping underneath the channel would provide additional SCE control for the logic device. | 10-23-2008 |
| 20090108373 | Techniques for Enabling Multiple Vt Devices Using High-K Metal Gate Stacks - Techniques for combining transistors having different threshold voltage requirements from one another are provided. In one aspect, a semiconductor device comprises a substrate having a first and a second nFET region, and a first and a second pFET region; a logic nFET on the substrate over the first nFET region; a logic pFET on the substrate over the first pFET region; a SRAM nFET on the substrate over the second nFET region; and a SRAM pFET on the substrate over the second pFET region, each comprising a gate stack having a metal layer over a high-K layer. The logic nFET gate stack further comprises a capping layer separating the metal layer from the high-K layer, wherein the capping layer is further configured to shift a threshold voltage of the logic nFET relative to a threshold voltage of one or more of the logic pFET, SRAM nFET and SRAM pFET. | 04-30-2009 |
| 20100164011 | Techniques for Enabling Multiple Vt Devices Using High-K Metal Gate Stacks - Techniques for combining transistors having different threshold voltage requirements from one another are provided. In one aspect, a semiconductor device comprises a substrate having a first and a second nFET region, and a first and a second pFET region; a logic nFET on the substrate over the first nFET region; a logic pFET on the substrate over the first pFET region; a SRAM nFET on the substrate over the second nFET region; and a SRAM pFET on the substrate over the second pFET region, each comprising a gate stack having a metal layer over a high-K layer. The logic nFET gate stack further comprises a capping layer separating the metal layer from the high-K layer, wherein the capping layer is further configured to shift a threshold voltage of the logic nFET relative to a threshold voltage of one or more of the logic pFET, SRAM nFET and SRAM pFET. | 07-01-2010 |
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| 20090132839 | Method and device to handle denial of service attacks on wake events - A method and device may selectively resume a computing device from a low power state according to a security policy. The security policy may be embedded in the hardware of the computing device and may be enforced even when the device is in a low power state. Such a policy may provide protection from hacker and virus based denial of service attacks using a flood of packets formatted to provide a wake event request. Other embodiments are described and claimed. | 05-21-2009 |
| 20090172438 | METHOD AND APPARATUS FOR COST AND POWER EFFICIENT, SCALABLE OPERATING SYSTEM INDEPENDENT SERVICES - A low cost, low power consumption scalable architecture is provided to allow a computer system to be managed remotely during all system power states. In a lowest power state, power is only applied to minimum logic necessary to examine a network packet. Power is applied for a short period of time to an execution subsystem and one of a plurality of cores selected to handle processing of received service requests. After processing the received service requests, the computer system returns to the lowest power state. | 07-02-2009 |
| 20090172443 | Methods and apparatuses for processing wake events of communication networks - Methods, apparatuses, and computer program products that respond to wake events of communication networks are disclosed. One or more embodiments comprise setting a wake password of a computing device, such as a notebook computer or a server. Some of the embodiments comprise receiving a wake request from a communications network, establishing a secure communication session, and setting the wake password with the secure communication session. Some embodiments comprise an apparatus having a network controller to allow a platform to communicate via a communications network, non-volatile memory that stores a wake password, and a management controller which may communicate with a management console via a secure communication session to update the wake password. One or more embodiments the network controller may wake management hardware and/or wake the management controller while keeping one or more of the devices in the power conservation mode. | 07-02-2009 |
| 20100082961 | Apparatus and method to harden computer system - In some embodiments, a processor-based system may include a processor, the processor having a processor identification, one or more electronic components coupled to the processor, at least one of the electronic components having a component identification, and a hardware security component coupled to the processor and the electronic component. The hardware security component may include a secure non-volatile memory and a controller. The controller may be configured to receive the processor identification from the processor, receive the at least one component identification from the one or more electronic components, and determine if a boot of the processor-based system is a provisioning boot of the processor-based system. If the boot is determined to be the provisioning boot, the controller may be configured to store a security code in the secure non-volatile memory, wherein the security code is based on the processor identification and the at least one component identification. Other embodiments are disclosed and claimed. | 04-01-2010 |
| 20100083365 | Apparatus and method to harden computer system - In some embodiments, a processor-based system may include a processor, the processor having a processor identification, one or more electronic components coupled to the processor, at least one of the electronic components having a component identification, and a hardware security component coupled to the processor and the electronic component. The hardware security component may include a secure non-volatile memory and a controller. The controller may be configured to receive the processor identification from the processor, receive the at least one component identification from the one or more electronic components, and determine if a boot of the processor-based system is a provisioning boot of the processor-based system. If the boot is determined to be the provisioning boot, the controller may be configured to store a security code in the secure non-volatile memory, wherein the security code is based on the processor identification and the at least one component identification. Other embodiments are disclosed and claimed. | 04-01-2010 |
| 20100169968 | PROCESSOR EXTENSIONS FOR EXECUTION OF SECURE EMBEDDED CONTAINERS - Methods and apparatus relating to processor extensions for execution of secure embedded containers are described. In an embodiment, a scalable solution for manageability function is provided, e.g., for UMPC environments or otherwise where utilizing a dedicated processor or microcontroller for manageability is inappropriate or impractical. For example, in an embodiment, an OS (Operating System) or VMM (Virtual Machine Manager) Independent (generally referred to herein as “OI”) architecture involves creating one or more containers on a processor by dynamically partitioning resources (such as processor cycles, memory, devices) between the HOST OS/VMM and the OI container. Other embodiments are also described and claimed. | 07-01-2010 |
| 20110145598 | Providing Integrity Verification And Attestation In A Hidden Execution Environment - In one embodiment, a processor includes a microcode storage including processor instructions to create and execute a hidden resource manager (HRM) to execute in a hidden environment that is not visible to system software. The processor may further include an extend register to store security information including a measurement of at least one kernel code module of the hidden environment and a status of a verification of the at least one kernel code module. Other embodiments are described and claimed. | 06-16-2011 |
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| 20090121258 | FIELD EFFECT TRANSISTOR CONTAINING A WIDE BAND GAP SEMICONDUCTOR MATERIAL IN A DRAIN - A field effect transistor comprising a silicon containing body is provided. After formation of a gate dielectric, gate electrode, and a first gate spacer, a drain side trench is formed and filled with a wide band gap semiconductor material. Optionally, a source side trench may be formed and filled with a silicon germanium alloy to enhance an on-current of the field effect transistor. Halo implantation and source and drain ion implantation are performed to form various doped regions. Since the wide band gap semiconductor material as a wider band gap than that of silicon, impact ionization is reduced due to the use of the wide band gap semiconductor material in the drain, and consequently, a breakdown voltage of the field effect transistor is increased compared to transistors employing silicon in the drain region. | 05-14-2009 |
| 20090302386 | SOI TRANSISTOR HAVING A CARRIER RECOMBINATION STRUCTURE IN A BODY - A top semiconductor layer is formed with two different thicknesses such that a step is formed underneath a body region of a semiconductor-on-insulator (SOI) field effect transistor at the interface between a top semiconductor layer and an underlying buried insulator layer. The interface and the accompanying interfacial defects in the body region provide recombination centers, which increase the recombination rate between the holes and electrons in the body region. Optionally, a spacer portion, comprising a material that functions as recombination centers, is formed on sidewalls of the step to provide an enhanced recombination rate between holes and electrons in the body region, which increases the bipolar breakdown voltage of a SOI field effect transistor. | 12-10-2009 |
